2 resultados para Sedile, tempur, memory, comfort, vibrazioni

em SAPIENTIA - Universidade do Algarve - Portugal


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This talk addresses the problem of controlling a heating ventilating and air conditioning system with the purpose of achieving a desired thermal comfort level and energy savings. The formulation uses the thermal comfort, assessed using the predicted mean vote (PMV) index, as a restriction and minimises the energy spent to comply with it. This results in the maintenance of thermal comfort and on the minimisation of energy, which in most operating conditions are conflicting goals requiring some sort of optimisation method to find appropriate solutions over time. In this work a discrete model based predictive control methodology is applied to the problem. It consists of three major components: the predictive models, implemented by radial basis function neural networks identifed by means of a multi-objective genetic algorithm [1]; the cost function that will be optimised to minimise energy consumption and provide adequate thermal comfort; and finally the optimisation method, in this case a discrete branch and bound approach. Each component will be described, with a special emphasis on a fast and accurate computation of the PMV indices [2]. Experimental results obtained within different rooms in a building of the University of Algarve will be presented, both in summer [3] and winter [4] conditions, demonstrating the feasibility and performance of the approach. Energy savings resulting from the application of the method are estimated to be greater than 50%.

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The objective of this thesis is to study the properties of resistive switching effect based on bistable resistive memory which is fabricated in the form of Al2O3/polymer diodes and to contribute to the elucidation of resistive switching mechanisms. Resistive memories were characterized using a variety of electrical techniques, including current-voltage measurements, small-signal impedance, and electrical noise based techniques. All the measurements were carried out over a large temperature range. Fast voltage ramps were used to elucidate the dynamic response of the memory to rapid varying electric fields. The temperature dependence of the current provided insight into the role of trapped charges in resistive switching. The analysis of fast current fluctuations using electric noise techniques contributed to the elucidation of the kinetics involved in filament formation/rupture, the filament size and correspondent current capabilities. The results reported in this thesis provide insight into a number of issues namely: (i) The fundamental limitations on the speed of operation of a bi-layer resistive memory are the time and voltage dependences of the switch-on mechanism. (ii) The results explain the wide spread in switching times reported in the literature and the apparently anomalous behaviour of the high conductance state namely the disappearance of the negative differential resistance region at high voltage scan rates which is commonly attributed to a “dead time” phenomenon which had remained elusive since it was first reported in the ‘60s. (iii) Assuming that the current is filamentary, Comsol simulations were performed and used to explain the observed dynamic properties of the current-voltage characteristics. Furthermore, the simulations suggest that filaments can interact with each other. (iv) The current-voltage characteristics have been studied as a function of temperature. The findings indicate that creation and annihilation of filaments is controlled by filling and neutralizing traps localized at the oxide/polymer interface. (v) Resistive switching was also studied in small-molecule OLEDs. It was shown that the degradation that leads to a loss of light output during operation is caused by the presence of a resistive switching layer. A diagnostic tool that predicts premature failure of OLEDs was devised and proposed. Resistive switching is a property of oxides. These layers can grow in a number of devices including, organic light emitting diodes (OLEDs), spin-valve transistors and photovoltaic devices fabricated in different types of material. Under strong electric fields the oxides can undergo dielectric breakdown and become resistive switching layers. Resistive switching strongly modifies the charge injection causing a number of deleterious effects and eventually device failure. In this respect the findings in this thesis are relevant to understand reliability issues in devices across a very broad field.