Simulação de sistemas solares passivos usando materiais de mudança de fase (PCMs)

O gradual consumo de energia primária a nível mundial deu origem a uma crise não só ambiental como também económica, proveniente das limitações das reservas energéticas e do fornecimento. Estas inquietações têm levado a um estudo cada vez mais aprofundado no que concerne à eficiência energética de edifícios. É neste contexto que surge o estudo da aplicação dos materiais de mudança de fase (PCM) na térmica dos edifícios. O presente trabalho consiste no estudo da influência da introdução de materiais de mudança de fase no comportamento térmico de um edifício. Foi analisada uma simulação numérica para um sistema solar passivo de ganho direto, por um programa de simulação designado EXTEND™. Efetuou-se, também, o estudo paramétrico de determinadas propriedades associadas aos materiais de mudança de fase. Após a análise, foi testado o impacto, em termos de conforto, da utilização de materiais de mudança de fase em sistemas solares passivos de ganho direto.

Chalcogenide thin films for solar cells: growth and properties

Thin film solar cells have in recent years gained market quota against traditional silicon photovoltaic panels. These developments were in a large part due to CdTe solar panels on whose development started earlier than their competitors. Panels based on Cu(In,Ga)Se2 (CIGS), despite being more efficient in a laboratory and industrial scale than the CdTe ones, still need a growth technology cheaper and easier to apply in industry. Although usually presented as a good candidate to make cheap panels, CIGS uses rare and expensive materials as In and Ga. The price evolution of these materials might jeopardize CIGS future. This thesis presents three different studies. The first is the study of different processes for the incorporation of Ga in a hybrid CIGS growth system. This system is based on sputtering and thermal evaporation. This technology is, in principle, easier to be applied in the industry and solar cells with efficiencies around to 7% were fully made in Aveiro. In the second part of this thesis, a new material to replace CIGS in thin film solar cells is studied. The growth conditions and fundamental properties of Cu2ZnSnSe4 (CZTSe) were studied in depth. Suitable conditions of temperature and pressure for the growth of this material are reported. Its band gap energy was estimated at 1.05 eV and the Raman scattering peaks were identified. Solar cells made with this material showed efficiencies lower than 0.1%. Finally, preliminary work regarding the incorporation of selenium in Cu2ZnSnS4 (CZTS) thin films was carried out. The structural and morphological properties of thin films of Cu2ZnSn(S,Se)4 have been studied and the results show that the incorporation of selenium is higher in films with precursors rather with already formed Cu2SnS3 or Cu2ZnSnS4 thin films. A solar cell with 0.9 % of efficiency was prepared.