2 resultados para Colloidal Photonic Crystals

em Repositório Institucional da Universidade de Aveiro - Portugal


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The strong progress evidenced in photonic and optoelectronic areas, accompanied by an exponential development in the nanoscience and nanotechnology, gave rise to an increasing demand for efficient luminescent materials with more and more exigent characteristics. In this field, wide band gap hosts doped with lanthanide ions represent a class of luminescent materials with a strong technological importance. Within wide band gap material, zirconia owns a combination of physical and chemical properties that potentiate it as an excellent host for the aforementioned ions, envisaging its use in different areas, including in lighting and optical sensors applications, such as pressure sensors and biosensors. Following the demand for outstanding luminescent materials, there is also a request for fast, economic and an easy scale-up process for their production. Regarding these demands, laser floating zone, solution combustion synthesis and pulsed laser ablation in liquid techniques are explored in this thesis for the production of single crystals, nanopowders and nanoparticles of lanthanides doped zirconia based hosts. Simultaneously, a detailed study of the morphological, structural and optical properties of the produced materials is made. The luminescent characteristics of zirconia and yttria stabilized zirconia (YSZ) doped with different lanthanide ions (Ce3+ (4f1), Pr3+ (4f2), Sm3+ (4f5), Eu3+ (4f6), Tb3+ (4f8), Dy3+ (4f9), Er3+ (4f11), Tm3+ (4f12), Yb3+ (4f13)) and co-doped with Er3+,Yb3+ and Tm3+,Yb3+ are analysed. Besides the Stokes luminescence, the anti- Stokes emission upon infrared excitation (upconversion and black body radiation) is also analysed and discussed. The comparison of the luminescence characteristics in materials with different dimensions allowed to analyse the effect of size in the luminescent properties of the dopant lanthanide ions. The potentialities of application of the produced luminescent materials in solid state light, biosensors and pressure sensors are explored taking into account their studied characteristics.

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In the last years there has been a clear evolution in the world of telecommunications, which goes from new services that need higher speeds and higher bandwidth, until a role of interactions between people and machines, named by Internet of Things (IoT). So, the only technology able to follow this growth is the optical communications. Currently the solution that enables to overcome the day-by-day needs, like collaborative job, audio and video communications and share of les is based on Gigabit-capable Passive Optical Network (G-PON) with the recently successor named Next Generation Passive Optical Network Phase 2 (NG-PON2). This technology is based on the multiplexing domain wavelength and due to its characteristics and performance becomes the more advantageous technology. A major focus of optical communications are Photonic Integrated Circuits (PICs). These can include various components into a single device, which simpli es the design of the optical system, reducing space and power consumption, and improves reliability. These characteristics make this type of devices useful for several applications, that justi es the investments in the development of the technology into a very high level of performance and reliability in terms of the building blocks. With the goal to develop the optical networks of future generations, this work presents the design and implementation of a PIC, which is intended to be a universal transceiver for applications for NG-PON2. The same PIC will be able to be used as an Optical Line Terminal (OLT) or an Optical Network Unit (ONU) and in both cases as transmitter and receiver. Initially a study is made of Passive Optical Network (PON) and its standards. Therefore it is done a theoretical overview that explores the materials used in the development and production of this PIC, which foundries are available, and focusing in SMART Photonics, the components used in the development of this chip. For the conceptualization of the project di erent architectures are designed and part of the laser cavity is simulated using Aspic™. Through the analysis of advantages and disadvantages of each one, it is chosen the best to be used in the implementation. Moreover, the architecture of the transceiver is simulated block by block through the VPItransmissionMaker™ and it is demonstrated its operating principle. Finally it is presented the PIC implementation.