Modeling and simulation of bulk gallium nitride power semiconductor devices

Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range.

Using virtual topology operations to generate analysis topology

Virtual topology operations have been utilized to generate an analysis topology definition suitable for downstream mesh generation. Detailed descriptions are provided for virtual topology merge and split operations for all topological entities. Current virtual topology technology is extended to allow the virtual partitioning of volume cells and the topological queries required to carry out each operation are provided. Virtual representations are robustly linked to the underlying geometric definition through an analysis topology. The analysis topology and all associated virtual and topological dependencies are automatically updated after each virtual operation, providing the link to the underlying CAD geometry. Therefore, a valid description of the analysis topology, including relative orientations, is maintained. This enables downstream operations, such as the merging or partitioning of virtual entities, and interrogations, such as determining if a specific meshing strategy can be applied to the virtual volume cells, to be performed on the analysis topology description. As the virtual representation is a non-manifold description of the sub-divided domain the interfaces between cells are recorded automatically. This enables the advantages of non-manifold modelling to be exploited within the manifold modelling environment of a major commercial CAD system, without any adaptation of the underlying CAD model. A hierarchical virtual structure is maintained where virtual entities are merged or partitioned. This has a major benefit over existing solutions as the virtual dependencies are stored in an open and accessible manner, providing the analyst with the freedom to create, modify and edit the analysis topology in any preferred sequence, whilst the original CAD geometry is not disturbed. Robust definitions of the topological and virtual dependencies enable the same virtual topology definitions to be accessed, interrogated and manipulated within multiple different CAD packages and linked to the underlying geometry.

Intelligent DMU creation: Nominal CAD model preparation for automated tolerance allocation

This paper examines the integration of a tolerance design process within the Computer-Aided Design (CAD) environment having identified the potential to create an intelligent Digital Mock-Up [1]. The tolerancing process is complex in nature and as such reliance on Computer-Aided Tolerancing (CAT) software and domain experts can create a disconnect between the design and manufacturing disciplines It is necessary to implement the tolerance design procedure at the earliest opportunity to integrate both disciplines and to reduce workload in tolerance analysis and allocation at critical stages in product development when production is imminent.
The work seeks to develop a methodology that will allow for a preliminary tolerance allocation procedure within CAD. An approach to tolerance allocation based on sensitivity analysis is implemented on a simple assembly to review its contribution to an intelligent DMU. The procedure is developed using Python scripting for CATIA V5, with analysis results aligning with those in literature. A review of its implementation and requirements is presented.

How Good Am I? Crude Self-Assessment vs. Examination

With the new academic year structure encouraging more in-term assessment to replace end-of-year examinations one of the problems we face is assessing students and keeping track of individual student learning without overloading the students and staff with excessive assessment burdens.
In the School of Electronics, Electrical Engineering and Computer Science, we have constructed a system that allows students to self-assess their capability on a simple Yes/No/Don’t Know scale against fine grained learning outcomes for a module. As the term progresses students update their record as appropriately, including selecting a Learnt option to reflect improvements they have gained as part of their studies.
In the system each of the learning outcomes are linked to the relevant teaching session (lectures and labs) and to online resources that students can access at any time. Students can structure their own learning experience to their needs and preferences in order to attain the learning outcomes.
The system keeps a history of the student’s record, allowing the lecturer to observe how the students’ abilities progress over the term and to compare it to assessment results. The system also keeps of any of the resource links that student has clicked on and the related learning outcome.
The initial work is comparing the accuracy of the student self-assessments with their performance in the related questions in the traditional end-of-year examination.

A randomized controlled trial of an early-intervention, computer-based literacy program to boost phonological skills in 4- to 6-year-old children

Background: Many school-based interventions are being delivered in the absence of evidence of effectiveness (Snowling & Hulme, 2011, Br. J. Educ. Psychol., 81, 1).Aim: This study sought to address this oversight by evaluating the effectiveness of the commonly used the Lexia Reading Core5 intervention, with 4- to 6-year-old pupils in Northern Ireland.Sample: A total of 126 primary school pupils in year 1 and year 2 were screened on the Phonological Assessment Battery 2nd Edition (PhAB-2). Children were recruited from the equivalent year groups to Reception and Year 1 in England and Wales, and Pre-kindergarten and Kindergarten in North America.
Methods: A total of 98 below-average pupils were randomized (T0) to either an 8-week block (inline image = 647.51 min, SD = 158.21) of daily access to Lexia Reading Core5 (n = 49) or a waiting-list control group (n = 49). Assessment of phonological skills was completed at post-intervention (T1) and at 2-month follow-up (T2) for the intervention group only.
Results: Analysis of covariance which controlled for baseline scores found that the Lexia Reading Core5 intervention group made significantly greater gains in blending, F(1, 95) = 6.50, p = .012, partial η2 = .064 (small effect size) and non-word reading, F(1, 95) = 7.20, p = .009, partial η2 = .070 (small effect size). Analysis of the 2-month follow-up of the intervention group found that all group treatment gains were maintained. However, improvements were not uniform among the intervention group with 35% failing to make progress despite access to support. Post-hoc analysis revealed that higher T0 phonological working memory scores predicted improvements made in phonological skills.
Conclusions: An early-intervention, computer-based literacy program can be effective in boosting the phonological skills of 4- to 6-year-olds, particularly if these literacy difficulties are not linked to phonological working memory deficits.