Modeling and simulation of bulk gallium nitride power semiconductor devices

Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range.

Few-layer, large-area, 2D covalent organic framework semiconductor thin films.

In this work, we synthesize large-area thin films of a conjugated, imine-based, two-dimensional covalent organic framework at the solution/air interface. Thicknesses between ∼2-200 nm are achieved. Films can be transferred to any desired substrate by lifting from underneath, enabling their use as the semiconducting active layer in field-effect transistors.

Feature Selection for Anomaly Detection Using Optical Emission Spectroscopy

To maintain the pace of development set by Moore's law, production processes in semiconductor manufacturing are becoming more and more complex. The development of efficient and interpretable anomaly detection systems is fundamental to keeping production costs low. As the dimension of process monitoring data can become extremely high anomaly detection systems are impacted by the curse of dimensionality, hence dimensionality reduction plays an important role. Classical dimensionality reduction approaches, such as Principal Component Analysis, generally involve transformations that seek to maximize the explained variance. In datasets with several clusters of correlated variables the contributions of isolated variables to explained variance may be insignificant, with the result that they may not be included in the reduced data representation. It is then not possible to detect an anomaly if it is only reflected in such isolated variables. In this paper we present a new dimensionality reduction technique that takes account of such isolated variables and demonstrate how it can be used to build an interpretable and robust anomaly detection system for Optical Emission Spectroscopy data.