110 resultados para Oscillatory reaction


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Experimental standing wave oscillations of the interfacial potential across an electrode have been observed in the electrocatalytic oxidation of formic acid on a Pt ring working electrode. The instantaneous potential distribution was monitored by means of equispaced potential microprobes along the electrode. The oscillatory standing waves spontaneously arose from a homogeneous stationary state prior to a Hopf bifurcation if the reference electrode was placed close to the working electrode. Reduced electrolyte concentrations resulted in aperiodic potential patterns, while the presence of a sufficiently large ohmic resistance completely suppressed spatial inhomogeneities. The experimental findings confirm numerical predictions of a reaction-migration formalism: under the chosen geometry, a long-range negative potential coupling between distant points across the ring electrode can lead to oscillatory potential domains of distinct phase. It is further shown that the occurrence of oscillatory standing waves can be rationalized as the electrochemical equivalent of Turing's second bifurcation (wave bifurcation). In the presence of an external resistance, the coupling becomes positive throughout and leads to spatial synchronization.

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To predict where a catalytic reaction should occur is a fundamental issue scientifically. Technologically, it is also important because it can facilitate the catalyst's design. However, to date, the understanding of this issue is rather limited. In this work, two types of reactions, CH4 CH3 + H and CO C + 0 on two transition metal surfaces, were chosen as model systems aiming to address in general where a catalytic reaction should occur. The dissociations of CH4 - CH3 + H and CO --> C + O and their reverse reactions on flat, stepped, and kinked Rh and Pd surfaces were studied in detail. We find the following: First, for the CH4 Ch(3) + H reaction, the dissociation barrier is reduced by similar to0.3 eV on steps and kinks as compared to that on flat surfaces. On the other hand, there is essentially no difference in barrier for the association reaction of CH3 + H on the flat surfaces and the defects. Second, for the CO C + 0 reaction, the dissociation barrier decreases dramatically (more than 0.8 eV on Rh and Pd) on steps and kinks as compared to that on flat surfaces. In contrast to the CH3 + H reaction, the C + 0 association reaction also preferentially occurs on steps and kinks. We also present a detailed analysis of the reaction barriers in which each barrier is decomposed quantitatively into a local electronic effect and a geometrical effect. Our DFT calculations show that surface defects such as steps and kinks can largely facilitate bond breaking, while whether the surface defects could promote bond formation depends on the individual reaction as well as the particular metal. The physical origin of these trends is identified and discussed. On the basis of our results, we arrive at some simple rules with respect to where a reaction should occur: (i) defects such as steps are always favored for dissociation reactions as compared to flat surfaces; and (ii) the reaction site of the association reactions is largely related to the magnitude of the bonding competition effect, which is determined by the reactant and metal valency. Reactions with high valency reactants are more likely to occur on defects (more structure-sensitive), as compared to reactions with low valency reactants. Moreover, the reactions on late transition metals are more likely to proceed on defects than those on the early transition metals.

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The formation and reactivity of surface intermediates in the reverse water-gas-shift reaction on a Pt/CeO2 catalyst are critically dependent on the reaction conditions so that conclusionsregarding the reaction mechanism cannot be inferred using ex operando conditions.