Analysis and Synthesis of pHEMT Class-E Amplifiers with Shunt Inductor including ON-State Active-Device Resistance Effects

In this theoretical paper, the analysis of the effect that ON-state active-device resistance has on the performance of a Class-E tuned power amplifier using a shunt inductor topology is presented. The work is focused on the relatively unexplored area of design facilitation of Class-E tuned amplifiers where intrinsically low-output-capacitance monolithic microwave integrated circuit switching devices such as pseudomorphic high electron mobility transistors are used. In the paper, the switching voltage and current waveforms in the presence of ON-resistance are analyzed in order to provide insight into circuit properties such as RF output power, drain efficiency, and power-output capability. For a given amplifier specification, a design procedure is illustrated whereby it is possible to compute optimal circuit component values which account for prescribed switch resistance loss. Furthermore, insight into how ON-resistance affects transistor selection in terms of peak switch voltage and current requirements is described. Finally, a design example is given in order to validate the theoretical analysis against numerical simulation.

Exploring figures of merit associated with the suboptimum operation of class-E power amplifiers

Closed-form design equations for the operation of a class-E amplifier for zero switch voltage slope and arbitrary duty cycle are derived. This approach allows an additional degree of freedom in the design of class-E amplifiers which are normally designed for 50 duty ratio. The analysis developed permits the selection of non-unique solutions where amplifier efficiency is theoretically 100 but power output capability is less than that the 50 duty ratio case would permit. To facilitate comparison between 50 (optimal) and non-50 (suboptimal) duty ratio cases, each important amplifier parameter is normalised to its corresponding optimum operation value. It is shown that by choosing a non-50 suboptimal solution, the operating frequency of a class-E amplifier can be extended. In addition, it is shown that by operating the amplifier in the suboptimal regime, other amplifier parameters, for example, transistor output capacitance or peak switch voltage, can be included along with the standard specification criteria of output power, DC supply voltage and operating frequency as additional input design specifications. Suboptimum class-E operation may have potential advantages for monolithic microwave integrated circuit realisation as lower inductance values (lower series resistance, higher self-resonance frequency, less area) may be required when compared with the results obtained for optimal class-E amplifier synthesis. The theoretical analysis conducted here was verified by harmonic balance simulation, with excellent agreement between both methods. © The Institution of Engineering and Technology 2007.

Transmission line matching effects on the performance of shunt-C/series-tuned and series-L/parallel-tuned Class-E amplifiers

The impact that the transmission-line load-network has on the performance of the recently introduced series-L/parallel-tuned Class-E amplifier and the classic shunt-C/series-tuned configuration when compared to optimally derived lumped load networks is discussed. In addition an improved load topology which facilitates harmonic suppression of up to 5 order as required for maximum Class-E efficiency as well as load resistance transformation and a design procedure involving the use of Kuroda's identity and Richard's transformation enable a distributed synthesis process which dispenses with the need for iterative tuning as previously required in order to achieve optimum Class-E operation. © 2005 IEEE.

Analysis of the effect of finite d.c. blocking capacitance and finite d.c. feed inductance on the performance of inverse class-E amplifiers

The first analysis and synthesis equations for the newly introduced inverse Class-E amplifier when operated with a finite d.c. blocking capacitance and a finite d.c.-feed inductance are presented in the paper. Closed-form design equations are derived in order to establish the circuit component values required for optimum synthesis. Excellent agreement between numerical simulation results and theoretical prediction is obtained. It is shown that drain efficiency approaching 100 at a pre-specified output power level can be achieved as zero-current switching and zero-current derivative conditions are simultaneously satisfied. The proposed analysis offers the prospect for realistic MMIC implementation.

Power combining techniques into unbalanced loads for Class-E and inverse Class-E amplifiers

A power combining strategy for Class-E and inverse Class-E amplifiers operating at high frequencies such that they can operate into unbalanced loads is proposed. This power combining method is particularly important for the inverse Class-E amplifier configuration whose single-stage topology is naturally limited for small-to-medium power applications. Design examples for the power combining synthesis of classical Class-E and then inverse Class-E amplifiers with specification 3 V-1.5 W-2.5 GHz are given. For this specification, it is shown that a three-branch combiner has a natural 50 V output impedance. The resulting circuits are simulated within Agilent Advanced Design Systems environment with good agreement to theoretical prediction. Further the performance of the proposed circuits when operated in a Linear amplification using Nonlinear Components transmitter configuration whereby two-branch amplifiers are driven with constant amplitude conjugate input phase signals is investigated.

The Yin and Yang of vitamin D receptor (VDR) signaling in neoplastic progression: Operational networks and tissue-specific growth control

Substantive evidence implicates vitamin D receptor (VDR) or its natural ligand 1a,25-(OH)2 D3 in modulation of tumor growth. However, both human and animal studies indicate tissue-specificity of effect. Epidemiological studies show both inverse and direct relationships between serum 25(OH)D levels and common solid cancers. VDR ablation affects carcinogen-induced tumorigenesis in a tissue-specific manner in model systems. Better understanding of the tissue-specificity of vitamin D-dependent molecular networks may provide insight into selective growth control by the seco-steroid, 1a,25-(OH)2 D3. This commentary considers complex factors that may influence the cell- or tissue-specificity of 1a,25-(OH)2 D3/VDR growth effects, including local synthesis, metabolism and transport of vitamin D and its metabolites, vitamin D receptor (VDR) expression and ligand-interactions, 1a,25-(OH)2 D3 genomic and non-genomic actions, Ca2+ flux, kinase activation, VDR interactions with activating and inhibitory vitamin D responsive elements (VDREs) within target gene promoters, VDR coregulator recruitment and differential effects on key downstream growth regulatory genes. We highlight some differences of VDR growth control relevant to colonic, esophageal, prostate, pancreatic and other cancers and assess the potential for development of selective prevention or treatment strategies.

Micro-environmental change as a trigger for granite decay in offshore Irish lighthouses: implications for the long-term preservation of operational historic buildings.

Following automation of lighthouses around the coastline of Ireland, reports of accelerated deterioration of interior granite stonework have increased significantly with an associated deterioration in the historic structure and rise in related maintenance costs. Decay of granite stone- work primarily occurs through granular disintegration with the effective grusification of granite surfaces. A decay gradient exists within the towers whereby the condition of granite in the lower levels is much worse than elsewhere. The lower tower levels are also regions with highest rela- tive humidity values and greatest salt concentrations. Data indicate that post-automation decay may have been trig- gered by a change in micro-environmental conditions within the towers associated with increased episodes of condensation on stone surfaces. This in turn appears to have facilitated deposition and accumulation of hygro- scopic salts (e.g. NaCl) giving rise to widespread evidence of deliquescence in the lower tower levels. Evidence indicates that the main factors contributing to accelerated deterioration of interior granite stonework are changes in micro-environmental conditions, salt weathering, chemical weathering through the corrosive effect of strongly alkaline conditions on alumino-silicate minerals within the granite and finally, the mica-rich characteristics of the granite itself which increases its structural and chemical susceptibility to subaerial weathering processes by creating points of weakness within the granite. This case study demonstrates how seemingly minor changes in micro-environmental conditions can unintentionally trigger the rapid and extensive deterioration of a previously stable rock type and threaten the long-term future of nationally iconic opera- tional historic structures.

Impact of gate-source/drain channel architecture on the performance of an operational transconductance amplifier (OTA)

In this work, we report on the significance of gate-source/drain extension region (also known as underlap design) optimization in double gate (DG) FETs to improve the performance of an operational transconductance amplifier (OTA). It is demonstrated that high values of intrinsic voltage gain (A(VO_OTA)) > 55 dB and unity gain frequency (f(T_OTA)) similar to 57 GHz in a folded cascode OTA can be achieved with gate-underlap channel design in 60 nm DG MOSFETs. These values correspond to 15 dB improvement in A(VO_OTA) and three fold enhancement in f(T_OTA) over a conventional non-underlap design. OTA performance based on underlap single gate SOI MOSFETs realized in ultra-thin body (UTB) and ultra-thin body BOX (UTBB) technologies is also evaluated. A(VO_OTA) values exhibited by a DG MOSFET-based OTA are 1.3-1.6 times higher as compared to a conventional UTB/UTBB single gate OTA. f(T_OTA) values for DG OTA are 10 GHz higher for UTB OTAs whereas a twofold improvement is observed with respect to UTBB OTAs. The simultaneous improvement in A(VO_OTA) and f(T_OTA) highlights the usefulness of underlap channel architecture in improving gain-bandwidth trade-off in analog circuit design. Underlap channel OTAs demonstrate high degree of tolerance to misalignment/oversize between front and back gates without compromising the performance, thus relaxing crucial process/technology-dependent parameters to achieve 'idealized' DG MOSFETs. Results show that underlap OTAs designed with a spacer-to-straggle (s/sigma) ratio of 3.2 and operated below a bias current (IBIAS) of 80 mu A demonstrate optimum performance. The present work provides new opportunities for realizing future ultra-wide band OTA design with underlap DG MOSFETs.