2 resultados para Internal conical interface connection


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For elastoplastic particle reinforced metal matrix composites, failure may originate from interface debonding between the particles and the matrix, both elastoplastic and matrix fracture near the interface. To calculate the stress and strain distribution in these regions, a single reinforcing particle axisymmetric unit cell model is used in this article. The nodes at the interface of the particle and the matrix are tied. The development of interfacial decohesion is not modelled. Finite element modelling is used, to reveal the effects of particle strain hardening rate, yield stress and elastic modulus on the interfacial traction vector (or stress vector), interface deformation and the stress distribution within the unit cell, when the composite is under uniaxial tension. The results show that the stress distribution and the interface deformation are sensitive to the strain hardening rate and the yield stress of the particle. With increasing particle strain hardening rate and yield stress, the interfacial traction vector and internal stress distribution vary in larger ranges, the maximum interfacial traction vector and the maximum internal stress both increase, while the interface deformation decreases. In contrast, the particle elastic modulus has little effect on the interfacial traction vector, internal stress and interface deformation.

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We employed a multitechnique approach using piezo-force response microscopy and photoemission microscopy to investigate a self-organizing polarization domain pattern in PbTiO3/La0.7Sr0.3MnO3 (PTO/LSMO) nanostructures. The polarization is correlated with the nanostructure morphology as well as with the thickness and Mn valence of the LSMO template layer. On the LSMO dots, the PTO is upwards polarized, whereas outside the nanodots, the polarization appears both strain and interface roughness dependent. The results suggest that the electronic structure and strain of the PTO/LSMO interface contribute to determining the internal bias of the ferroelectric layer.