Sub-nA spatially resolved conductivity profiling of surface and interface defects in ceria films

Spatial variability of conductivity in ceria is explored using scanning probe microscopy (SPM) with galvanostatic control. Ionically blocking electrodes are used to probe the conductivity under opposite polarities to reveal possible differences in the defect structure across a thin film of CeO2. Data suggests the existence of a large spatial inhomogeneity that could give rise to constant phase elements during standard electrochemical characterization, potentially affecting the overall conductivity of films on the macroscale. The approach discussed here can also be utilized for other mixed ionic electronic conductor (MIEC) systems including memristors and electroresistors, as well as physical systems such as ferroelectric tunneling barriers.

Determination of the heat transfer coefficient at the metal–die interface for high pressure die cast AlSi9Cu3Fe

When simulating the High Pressure Die Casting ‘HPDC’ process, the heat transfer coefficient ‘HTC’ between the casting and the die is critical to accurately predict the quality of the casting. To determine the HTC at the metal–die interface a production die for an automotive engine bearing beam, Die 1, was instrumented with type K thermocouples. A Magmasoft® simulation model was generated with virtual thermocouple points placed in the same location as the production die. The temperature traces from the simulation model were compared to the instrumentation results. Using the default simulation HTC for the metal–die interface, a poor correlation was seen, with the temperature response being much less for the simulation model. Because of this, the HTC at the metal–die interface was modified in order to get a better fit. After many simulation iterations, a good fit was established using a peak HTC of 42,000 W/m2 K, this modified HTC was further validated by a second instrumented production die, proving that the modified HTC gives good correlation to the instrumentation trials. The updated HTC properties for the simulation model will improve the predictive capabilities of the casting simulation software and better predict casting defects.

Electronic properties of interfaces and defects from many-body perturbation theory: Recent developments and applications

We review some recent developments in many body perturbation theory (MBPT) calculations that have enabled the study of interfaces and defects. Starting from the theoretical basis of MBPT, Hedin's equations are presented, leading to the CW and CWI' approximations. We introduce the perturbative approach, that is the one most commonly used for obtaining quasiparticle (QP) energies. The practical strategy presented for dealing with the frequency dependence of the self energy operator is based on either plasmon-pole models (PPM) or the contour deformation technique, with the latter being more accurate. We also discuss the extrapolar method for reducing the number of unoccupied states which need to be included explicity in the calculations. The use of the PAW method in the framework of MBPT is also described. Finally, results which have been obtained using, MBPT for band offsets a interfaces and for defects presented, with companies on the main difficulties and cancels.

Schematic representation of the QP corrections (marked with ) to the band edges (E and E-v) and a defect level (F) for a Si/SiO2 interface (Si and O atoms are represented in blue and red, respectively, in the ball and stick model) with an oxygen vacancy leading to a Si-Si bond (the Si atoms involved in this bond are colored light blue).