Non Classical Design in MOSFETs for Improving OTA gain-bandwidth trade off

In this paper, gain-bandwidth (GB) trade-off associated with analog device/circuit design due to conflicting requirements for enhancing gain and cutoff frequency is examined. It is demonstrated that the use of a nonclassical source/drain (S/D) profile (also known as underlap channel) can alleviate the GB trade-off associated with analog design. Operational transconductance amplifier (OTA) with 60 nm underlap S/D MOSFETs achieve 15 dB higher open loop voltage gain along with three times higher cutoff frequency as compared to OTA with classical nonunderlap S/D regions. Underlap design provides a methodology for scaling analog devices into the sub-100 nm regime and is advantageous for high temperature applications with OTA, preserving functionality up to 540 K. Advantages of underlap architecture over graded channel (GC) or laterally asymmetric channel (LAC) design in terms of GB behavior are demonstrated. Impact of transistor structural parameters on the performance of OTA is also analyzed. Results show that underlap OTAs designed with spacer-to-straggle ratio of 3.2 and operated below a bias current of 80 microamps demonstrate optimum performance. The present work provides new opportunities for realizing future ultra wide band OTA design with underlap DG MOSFETs in silicon-on-insulator (SOI) technology. Index Terms—Analog/RF, double gate, gain-bandwidth product, .

Impact of gate-source/drain channel architecture on the performance of an operational transconductance amplifier (OTA)

In this work, we report on the significance of gate-source/drain extension region (also known as underlap design) optimization in double gate (DG) FETs to improve the performance of an operational transconductance amplifier (OTA). It is demonstrated that high values of intrinsic voltage gain (A(VO_OTA)) > 55 dB and unity gain frequency (f(T_OTA)) similar to 57 GHz in a folded cascode OTA can be achieved with gate-underlap channel design in 60 nm DG MOSFETs. These values correspond to 15 dB improvement in A(VO_OTA) and three fold enhancement in f(T_OTA) over a conventional non-underlap design. OTA performance based on underlap single gate SOI MOSFETs realized in ultra-thin body (UTB) and ultra-thin body BOX (UTBB) technologies is also evaluated. A(VO_OTA) values exhibited by a DG MOSFET-based OTA are 1.3-1.6 times higher as compared to a conventional UTB/UTBB single gate OTA. f(T_OTA) values for DG OTA are 10 GHz higher for UTB OTAs whereas a twofold improvement is observed with respect to UTBB OTAs. The simultaneous improvement in A(VO_OTA) and f(T_OTA) highlights the usefulness of underlap channel architecture in improving gain-bandwidth trade-off in analog circuit design. Underlap channel OTAs demonstrate high degree of tolerance to misalignment/oversize between front and back gates without compromising the performance, thus relaxing crucial process/technology-dependent parameters to achieve 'idealized' DG MOSFETs. Results show that underlap OTAs designed with a spacer-to-straggle (s/sigma) ratio of 3.2 and operated below a bias current (IBIAS) of 80 mu A demonstrate optimum performance. The present work provides new opportunities for realizing future ultra-wide band OTA design with underlap DG MOSFETs.

A gain-of-function mutation in the HIF2A gene in familial erythrocytosis

Hypoxia-inducible factor (HIF) a, which has three isoforms, is central to the continuous balancing of the supply and demand of oxygen throughout the body. HIF-a is a transcription factor that modulates a wide range of processes, including erythropoiesis, angiogenesis, and cellular metabolism. We describe a family with erythrocytosis and a mutation in the HIF2A gene, which encodes the HIF-2a protein. Our functional studies indicate that this mutation leads to stabilization of the HIF-2a protein and suggest that wild-type HIF-2a regulates erythropoietin production in adults.

Artificial magnetic conductor surfaces and their application to low-profile high-gain planar antennas

Planar periodic metallic arrays behave as artificial magnetic conductor (AMC) surfaces when placed on a grounded dielectric substrate and they introduce a zero degrees reflection phase shift to incident waves. In this paper the AMC operation of single-layer arrays without vias is studied using a resonant cavity model and a new application to high-gain printed antennas is presented. A ray analysis is employed in order to give physical insight into the performance of AMCs and derive design guidelines. The bandwidth and center frequency of AMC surfaces are investigated using full-wave analysis and the qualitative predictions of the ray model are validated. Planar AMC surfaces are used for the first time as the ground plane in a high-gain microstrip patch antenna with a partially reflective surface as superstrate. A significant reduction of the antenna profile is achieved. A ray theory approach is employed in order to describe the functioning of the antenna and to predict the existence of quarter wavelength resonant cavities.

Planar High-Gain WLAN PCB Antenna

A simple design for a low-profile high-gain planar antenna has been presented in the letter. The antenna has the realized gain between 9 and 11 dBi and the return loss better than 10 dB over the 5.6-6.3-GHz frequency band, i.e. 11% bandwidth. A numerical study highlighting effects of key geometrical parameters on the gain and return loss of the antenna has been performed. It has been shown as well that the presented antenna occupies area 20% smaller than a conventional microstrip patch antenna array with a similar gain.

A 60 GHz wide tuning range SiGe bipolar VCO for HDMI and wireless docking applications

A wide tuning range voltage controlled oscillator (VCO) with novel architecture is proposed in this work. The entire circuit consists of a VCO core, a summing circuit, a single-ended to differential (STD) converter and a buffer amplifier. The VCO core oscillates at half the desired frequency and the second harmonic of the VCO core is extracted by the summing circuit, which is then converted to a differential pair by the STD. The entire VCO circuit operates from 58.85 to 70.85 GHz with 20% frequency tuning range. The measured VCO gain is less than 1.6 GHz/V. The measured phase noise at 3 MHz offset is less than -78 dBc/Hz across the entire tuning range. The differential phase error of the output signals is measured by down converting the VCO output signals to low gigahertz frequency using an on-chip mixer. The measured differential phase error is less than 8°. The VCO circuit, which is constructed using 0.35 µm SiGe technology, occupies 770 × 550 µm2 die area and consumes 62 mA under 3.5 V supply.

GAIN SCALING RELATIONSHIPS FOR NE-LIKE GE SLAB TARGETS

The gain coefficient of the strongest 3p --> 3s, J = 2 --> 1 lasing transition at 23.6 nm in the Ne-like Ge collisional excitation scheme has been measured, using the fundamental wavelength from a Nd:glass laser (1.06-mu-m), for a range of incident intensities on massive stripe targets up to 2.2 cm in length. From a threshold incident laser intensity of approximately 6 x 10(12) W/cm2, the gain coefficient rises to approximately 4.5 cm-1 for an irradiation intensity of approximately 2.5 x 10(13) W/cm2, tending towards still higher gain coefficients at higher incident intensities. For targets of maximum length, a gain-length product gL almost-equal-to 10 was reached with a resultant output power at 23.6 nm estimated to be at the approximately kW level. The beam divergence decreased with length to a minimum of approximately 7 mrad but no significant trend in beam pointing with plasma length was observed. From the trend in the gain coefficient, it appears that for a fixed energy laser irradiating a approximately 100-mu-m wide slab targets, an incident intensity of I(i) approximately 1.2 x 10(13) W/cm2 represents an optimum working level, assuming that plasma length is not limited by refractive effects. In addition to the usual valence electron excited 3p --> 3s transitions, the gain coefficient for the core excited 1s(2)2s2p(6)3d --> 1s(2)2s2p(6)3p transition at 19.9 nm has been measured to be approximately 1.5 cm-1 for an incident irradiance of approximately 2.5 x 10(13) W/cm2.

Two non-synonymous markers in PTPN21, identified by genome-wide association study data-mining and replication, are associated with schizophrenia

We conducted data-mining analyses of genome wide association (GWA) studies of the CATIE and MGS-GAIN datasets, and found 13 markers in the two physically linked genes, PTPN21 and EML5, showing nominally significant association with schizophrenia. Linkage disequilibrium (LD) analysis indicated that all 7 markers from PTPN21 shared high LD (r(2)>0.8), including rs2274736 and rs2401751, the two non-synonymous markers with the most significant association signals (rs2401751, P=1.10 × 10(-3) and rs2274736, P=1.21 × 10(-3)). In a meta-analysis of all 13 replication datasets with a total of 13,940 subjects, we found that the two non-synonymous markers are significantly associated with schizophrenia (rs2274736, OR=0.92, 95% CI: 0.86-0.97, P=5.45 × 10(-3) and rs2401751, OR=0.92, 95% CI: 0.86-0.97, P=5.29 × 10(-3)). One SNP (rs7147796) in EML5 is also significantly associated with the disease (OR=1.08, 95% CI: 1.02-1.14, P=6.43 × 10(-3)). These 3 markers remain significant after Bonferroni correction. Furthermore, haplotype conditioned analyses indicated that the association signals observed between rs2274736/rs2401751 and rs7147796 are statistically independent. Given the results that 2 non-synonymous markers in PTPN21 are associated with schizophrenia, further investigation of this locus is warranted.

W-Band Planar Wide-Angle Scanning Antenna Architecture

This paper proposes a hybrid scanning antenna architecture for applications in mm-wave intelligent mobile sensing and communications. We experimentally demonstrate suitable W-band leaky-wave antenna prototypes in substrate integrated waveguide (SIW) technology. Three SIW antennas have been designed that within a 6.5 % fractional bandwidth provide beam scanning over three adjacent angular sectors. Prototypes have been fabricated and their performance has been experimentally evaluated. The measured radiation patterns have shown three frequency scanning beams covering angles from 11 to 56 degrees with beamwidth of 10?±?3 degrees within the 88-94 GHz frequency range.

Small aperture evanescent-mode waveguide antenna matched using distributed coupled resonators

Presented is a design methodology which permits the application of distributed coupled resonator bandpass filter principles to form wideband small-aperture evanescent-mode waveguide antenna designs. This approach permits matching of the complex antenna aperture admittance of an evanescent-mode open-ended waveguide to a real impedance generator, and thereby to a coaxial feed probe. A simulated reflection coefficient of < - 10 dB was obtained over a bandwidth of 20%, from 2.0-2.45 GHz, in a 2.58 GHz cutoff waveguide. Dielectric-filled propagating waveguide and air-filled evanescent-mode waveguide sections are used to form the resonators/coupling elements of the antenna's coupled resonator matching sections. Simulated realised gain variation from 3.4-5.0 dBi is observed across the bandwidth. The antenna's maximum aperture dimension is < 0.47 wavelength at the upper operating frequency and so it is suitable for use in a wide angle scanning phased array.

Generic Ergodic Capacity Bounds for Fixed-Gain AF Dual-Hop Relaying Systems

This paper elaborates on the ergodic capacity of fixed-gain amplify-and-forward (AF) dual-hop systems, which have recently attracted considerable research and industry interest. In particular, two novel capacity bounds that allow for fast and efficient computation and apply for nonidentically distributed hops are derived. More importantly, they are generic since they apply to a wide range of popular fading channel models. Specifically, the proposed upper bound applies to Nakagami-m, Weibull, and generalized-K fading channels, whereas the proposed lower bound is more general and applies to Rician fading channels. Moreover, it is explicitly demonstrated that the proposed lower and upper bounds become asymptotically exact in the high signal-to-noise ratio (SNR) regime. Based on our analytical expressions and numerical results, we gain valuable insights into the impact of model parameters on the capacity of fixed-gain AF dual-hop relaying systems. © 2011 IEEE.

Increased Bandwidth Evanescent Open-Ended Waveguide Antenna Design Using the Imaginary Smith Chart

We present a novel antenna matching technique that uses the Imaginary Smith Chart to permit wideband matching of an evanescent open-ended waveguide antenna using a dielectric sheet air-spaced from the aperture. The fabricated antenna design is demonstrated to have a measured bandwidth of 24%, from 2.13–2.7 GHz, for reflection coefficient $qquad{<} -!!10~{rm dB}$ , with 2.725 GHz waveguide cutoff. The antenna's maximum aperture dimension is ${< 0.5}lambda_{0}$ at the upper frequency in the bandwidth and so it is suitable for use in a wide angle scanning phased array

Wide Matching - An Approach to Improving Noise Robustness for Speech Enhancement

It is shown that under certain conditions it is possible to obtain a good speech estimate from noise without requiring noise estimation. We study an implementation of the theory, namely wide matching, for speech enhancement. The new approach performs sentence-wide joint speech segment estimation subject to maximum recognizability to gain noise robustness. Experiments have been conducted to evaluate the new approach with variable noises and SNRs from -5 dB to noise free. It is shown that the new approach, without any estimation of the noise, significantly outperformed conventional methods in the low SNR conditions while retaining comparable performance in the high SNR conditions. It is further suggested that the wide matching and deep learning approaches can be combined towards a highly robust and accurate speech estimator.