The structure of [Co(H-tptz)Cl-3] center dot H2O (tptz=2,4,6-tri(2-pyridyl)-1,3,5-triazine) prepared by crystallization from the ionic liquid, N-butyl-N-methyl-pyrrolidinium bis(trifluoromethanesulfonyl)imide

The structure of tris-chloro[2,6-bis(2'-pyridyl)-4-(2'-pyridinium)-1,3,5-triazine]cobalt(II) monohydrate, [Co(C18H13N6)Cl-3]center dot H2O (C2/c (No. 15), a = 7.783(11), b = 22.42(3), c = 11.001(15) angstrom, beta = 90.05(2)degrees), crystallized from the open air reaction of CoCl2 and 2,4,6-tri(2-pyridyl)-1,3,5-triazine in the ionic liquid, N-butyl-N-methyl-pyrrolidinium bis(trifluoromethanesulfonyl)imide is reported. The structure consists of six coordinate cobalt in an octahedral geometry bonded to the tridentate tptz ligand and three chlorines. The non-coordinating pyridyl group in the tptz ligand is protonated (with the protonated nitrogen crystallographically disordered over two possible sites), providing overall charge neutrality for the complex.

The geometry and ionization structure of the wind in the eclipsing nova-like variables RW Tri and UX UMa

The UV spectra of nova-like variables are dominated by emission from the accretion disk, modified by scattering in a wind emanating from the disk. Here, we model the spectra of RW Tri and UX UMa, the only two eclipsing nova-like variables which have been observed with the Hubble Space Telescope in the far-ultraviolet, in an attempt to constrain the geometry and the ionization structure of their winds. Using our Monte Carlo radiative transfer code, we computed spectra for simply parameterized axisymmetric biconical outflow models and were able to find plausible models for both systems. These reproduce the primary UV resonance lines-N v, Si iv, and C iv-in the observed spectra in and out of eclipse. The distribution of these ions in the wind models is similar in both cases as is the extent of the primary scattering regions in which these lines are formed. The inferred mass-loss rates are 6%-8% of the mass accretion rates for the systems. We discuss the implication of our point models for our understanding of accretion disk winds in cataclysmic variables. © 2010. The American Astronomical Society. All rights reserved.

6-T SRAM cell design with nanoscale double-gate SOI MOSFETs: impact of source/drain engineering and circuit topology

The impact of source/drain engineering on the performance of a six-transistor (6-T) static random access memory (SRAM) cell, based on 22 nm double-gate (DG) SOI MOSFETs, has been analyzed using mixed-mode simulation, for three different circuit topologies for low voltage operation. The trade-offs associated with the various conflicting requirements relating to read/write/standby operations have been evaluated comprehensively in terms of eight performance metrics, namely retention noise margin, static noise margin, static voltage/current noise margin, write-ability current, write trip voltage/current and leakage current. Optimal design parameters with gate-underlap architecture have been identified to enhance the overall SRAM performance, and the influence of parasitic source/drain resistance and supply voltage scaling has been investigated. A gate-underlap device designed with a spacer-to-straggle (s/sigma) ratio in the range 2-3 yields improved SRAM performance metrics, regardless of circuit topology. An optimal two word-line double-gate SOI 6-T SRAM cell design exhibits a high SNM similar to 162 mV, I-wr similar to 35 mu A and low I-leak similar to 70 pA at V-DD = 0.6 V, while maintaining SNM similar to 30% V-DD over the supply voltage (V-DD) range of 0.4-0.9 V.

Analog performance of double gate SOI transistors

Double gate fully depleted silicon-on-insulator (DGSOI) is recognized as a possible solution when the physical gate length L-G reduces to 25nm for the 65nm node on the ITRS CMOS roadmap. In this paper, scaling guidelines are introduced to optimally design a nanoscale DGSOI. For this reason, the sensitivity of gain, f(T) and f(max) to each of the key geometric and technological parameters of the DGSOI are assessed and quantified using MixedMode simulation. The impact of the parasitic resistance and capacitance on analog device performance is systematically analysed. By comparing analog performance with a single gate (SG), it has been found that intrinsic gain in DGSOI is 4 times higher but its fT was found to be comparable to that of SGSOI at different regions of transistor operation. However, the extracted fmax in SG SOI was higher (similar to 40%) compared to DGSOI due to its lower capacitance.

Low power field programmable gate array implementation of fast digital signal processing algorithms: characterisation and manipulation of data locality

Dynamic power consumption is very dependent on interconnect, so clever mapping of digital signal processing algorithms to parallelised realisations with data locality is vital. This is a particular problem for fast algorithm implementations where typically, designers will have sacrificed circuit structure for efficiency in software implementation. This study outlines an approach for reducing the dynamic power consumption of a class of fast algorithms by minimising the index space separation; this allows the generation of field programmable gate array (FPGA) implementations with reduced power consumption. It is shown how a 50% reduction in relative index space separation results in a measured power gain of 36 and 37% over a Cooley-Tukey Fast Fourier Transform (FFT)-based solution for both actual power measurements for a Xilinx Virtex-II FPGA implementation and circuit measurements for a Xilinx Virtex-5 implementation. The authors show the generality of the approach by applying it to a number of other fast algorithms namely the discrete cosine, the discrete Hartley and the Walsh-Hadamard transforms.

Structure-based design of selective high-affinity telomeric quadruplex-binding ligands.

A library of triazole-based telomeric quadruplex-selective ligands has been developed that mimic an established family of tri-substituted acridine-based ligands, using crystal structure data as a starting-point for computer-based design. Binding affinities, estimated by electrospray mass spectrometry, are in accord with the design concept.

Quantitative structure-toxicity relationships for chlorophenols to bioluminescent lux-marked bacteria using atom-based semi-empirical molecular-orbital descriptors

Literature data on the toxicity of chlorophenols for three luminescent bacteria (Vibrio fischeri, and the lux-marked Pseudomonas fluorescens 10586s pUCD607 and Burkholderia spp. RASC c2 (Tn4431)) have been analyzed in relation to a set of computed molecular physico-chemical properties. The quantitative structure-toxicity relationships of the compounds in each species showed marked differences when based upon semi-empirical molecular-orbital molecular and atom based properties. For mono-, di- and tri-chlorophenols multiple linear regression analysis of V. fischeri toxicity showed a good correlation with the solvent accessible surface area and the charge on the oxygen atom. This correlation successfully predicted the toxicity of the heavily chlorinated phenols, suggesting in V. fischeri only one overall mechanism is present for all chlorophenols. Good correlations were also found for RASC c2 with molecular properties, such as the surface area and the nucleophilic super-delocalizability of the oxygen. In contrast the best QSTR for P. fluorescens contained the 2nd order connectivity index and ELUMO suggesting a different, more reactive mechanism. Cross-species correlations were examined, and between V. fischeri and RASC c2 the inclusion of the minimum value of the nucleophilic susceptibility on the ring carbons produced good results. Poorer correlations were found with P. fluorescens highlighting the relative similarity of V. fischeri and RASC c2, in contrast to that of P. fluorescens.

Multiobjective design optimization of IGBT power modules considering power cycling and thermal cycling

Insulated-gate bipolar transistor (IGBT) power modules find widespread use in numerous power conversion applications where their reliability is of significant concern. Standard IGBT modules are fabricated for general-purpose applications while little has been designed for bespoke applications. However, conventional design of IGBTs can be improved by the multiobjective optimization technique. This paper proposes a novel design method to consider die-attachment solder failures induced by short power cycling and baseplate solder fatigue induced by the thermal cycling which are among major failure mechanisms of IGBTs. Thermal resistance is calculated analytically and the plastic work design is obtained with a high-fidelity finite-element model, which has been validated experimentally. The objective of minimizing the plastic work and constrain functions is formulated by the surrogate model. The nondominated sorting genetic algorithm-II is used to search for the Pareto-optimal solutions and the best design. The result of this combination generates an effective approach to optimize the physical structure of power electronic modules, taking account of historical environmental and operational conditions in the field.