High-radix systolic modular multiplication on reconfigurable hardware

The overall aim of the work presented in this paper has been to develop Montgomery modular multiplication architectures suitable for implementation on modern reconfigurable hardware. Accordingly, novel high-radix systolic array Montgomery multiplier designs are presented, as we believe that the inherent regular structure and absence of global interconnect associated with these, make them well-suited for implementation on modern FPGAs. Unlike previous approaches, each processing element (PE) comprises both an adder and a multiplier. The inclusion of a multiplier in the PE means that the need to pre-compute or store any multiples of the operands is avoided. This also allows very high-radix implementations to be realised, further reducing the amount of clock cycles per modular multiplication, while still maintaining a competitive critical delay. For demonstrative purposes, 512-bit and 1024-bit FPGA implementations using radices of 2(8) and 2(16) are presented. The subsequent throughput rates are the fastest reported to date.

Characterization of optical properties of PtSi at 3.392 mu m from 300 K to 85 K and relation of morphological effects

PtSi/Si Schottky junctions, fabricated using a conventional technique of Pt deposition with a subsequent thermal anneal, are examined using X-ray diffraction, atomic force microscopy and a novel prism/gap/sample optical coupling system. With the aid of X-ray diffraction and atomic farce microscopy it is shown that a post-anneal etch in aqua regia is essential for the removal of an unreacted, rough surface layer of Pt, to leave a much smoother PtSi film. The prism/gap/sample or Otto coupling rig is mounted in a small UHV chamber and has facilities for remote variation of the gap (by virtue of a piezoactuator system) and variation of the temperature in the range of similar to 300 K - 85 K. The system is used to excite surface plasmon polaritons on the outer surface of the PtSi and thus produce sensitive optical characterisation as a function of temperature. This is performed in order to yield an understanding of the temperature dependence of phonon and interface scattering of carriers in the PtSi.