PHOTOSIGNAL ENHANCEMENT IN AL-GAAS DIODES DUE TO SURFACE-PLASMONS AND GUIDED-WAVE MODES

Light of wavelength 632.8 nm and p-polarization is incident on a prism-air gap (varied from 0.7 to 7 mum)-Al-GaAs arrangement. Both the photosignal generated by the Schottky diode and the reflectance are measured as a function of the internal angle of incidence in the prism. There is significant, well-defined enhancement of the photosignal, up to a factor of approximately 7.5, associated with two different types of enhanced absorption modes. For air gaps <1.5 mum there is photosignal enhancement due to an enhanced absorption feature (reflectance dip) that occurs at an angle of incidence just above critical angle in the prism; this feature corresponds to the excitation of a surface plasmon polariton at the Al-air interface. For air gaps > 1 mum there are between one and ten photoresponse peaks at input angles less than the critical angle. The corresponding enhanced absorption features are due to leaky guided wave modes set up in the air gap.

ANALYSIS OF SURFACE-PLASMON POLARITON ENHANCEMENT IN PHOTODETECTION BY AL-GAAS SCHOTTKY DIODES

The surface plasmon polariton mediated photoresponse from Al-GaAs diodes is examined in a prism-air gap-diode configuration as a function of both the wavelength of the incident light and thickness of the Al electrode. The experimental data shows a pronounced dip in reflectance as a function of internal angle of incidence in the prism, due to the excitation of the surface plasmon polariton at the Al-air interface, and a corresponding peak in device photosignal. Careful modelling of reflectance and quantum efficiency data shows that the bulk of the signal is generated by light which is re-radiated from this surface mode into the semiconductor substrate where it is absorbed by the creation of electron-hole pairs in the depletion region. This holds for all the wavelengths used here (all are shorter than the GaAs absorption edge) and across the thickness range of the Al electrodes (20-50 nm). Quantum efficiencies in the range 0.5-22% and enhancement factors of typically 7.5 were recorded in this investigation.

Paving the way to nanoionics: atomic origin of barriers for ionic transport through interfaces

The blocking of ion transport at interfaces strongly limits the performance of electrochemical nanodevices for energy applications. The barrier is believed to arise from space-charge regions generated by mobile ions by analogy to semiconductor junctions. Here we show that something different is at play by studying ion transport in a bicrystal of yttria (9% mol) stabilized zirconia (YSZ), an emblematic oxide ion conductor. Aberration-corrected scanning transmission electron microscopy (STEM) provides structure and composition at atomic resolution, with the sensitivity to directly reveal the oxygen ion profile. We find that Y segregates to the grain boundary at Zr sites, together with a depletion of oxygen that is confined to a small length scale of around 0.5 nm. Contrary to the main thesis of the space-charge model, there exists no evidence of a long-range O vacancy depletion layer. Combining ion transport measurements across a single grain boundary by nanoscale electrochemical strain microscopy (ESM), broadband dielectric spectroscopy measurements, and density functional calculations, we show that grain-boundary-induced electronic states act as acceptors, resulting in a negatively charged core. Ultimately, it is this negative charge which gives rise to the barrier for ion transport at the grain boundary

Abnormal endothelial tight junctions in active lesions and normal-appearing white matter in multiple sclerosis

Blood-brain barrier (BBB) breakdown, demonstrable in vivo by enhanced MRI is characteristic of new and expanding inflammatory lesions in relapsing remitting and chronic progressive multiple sclerosis (MS). Subtle leakage may also occur in primary progressive MS. However, the anatomical route(s) of BBB leakage have not been demonstrated. We investigated the possible involvement of interendothelial tight junctions (TJ) by examining the expression of TJ proteins (occludin and ZO-1 ) in blood vessels in active MS lesions from 8 cases of MS and in normal-appearing white (NAWM) matter from 6 cases. Blood vessels (10-50 per frozen section) were scanned using confocal laser scanning microscopy to acquire datasets for analysis. TJ abnormalities manifested as beading, interruption, absence or diffuse cytoplasmic localization of fluorescence, or separation of junctions (putative opening) were frequent (affecting 40% of vessels) in oil red-O-positive active plaques but less frequent in NAWM (15%), and in normal (

Oxaliplatin induces hyperexcitability at motor and autonomic neuromuscular junctions through effects on voltage-gated sodium channels

Oxaliplatin, an effective cytotoxic treatment in combination with 5-fluorouracil for colorectal cancer, is associated with sensory, motor and autonomic neurotoxicity. Motor symptoms include hyperexcitability while autonomic effects include urinary retention, but the cause of these side-effects is unknown. We examined the effects on motor nerve function in the mouse hemidiaphragm and on the autonomic system in the vas deferens. In the mouse diaphragm, oxaliplatin (0.5 mM) induced multiple endplate potentials (EPPs) following a single stimulus, and was associated with an increase in spontaneous miniature EPP frequency. In the vas deferens, spontaneous excitatory junction potential frequency was increased after 30 min exposure to oxaliplatin; no changes in resting Ca(2+) concentration in nerve terminal varicosities were observed, and recovery after stimuli trains was unaffected.In both tissues, an oxaliplatin-induced increase in spontaneous activity was prevented by the voltage-gated Na(+) channel blocker tetrodotoxin (TTX). Carbamazepine (0.3 mM) also prevented multiple EPPs and the increase in spontaneous activity in both tissues. In diaphragm, beta-pompilidotoxin (100 microM), which slows Na(+) channel inactivation, induced multiple EPPs similar to oxaliplatin's effect. By contrast, blockers of K(+) channels (4-aminopyridine and apamin) did not replicate oxaliplatin-induced hyperexcitability in the diaphragm. The prevention of hyperexcitability by TTX blockade implies that oxaliplatin acts on nerve conduction rather than by effecting repolarisation. The similarity between beta-pompilidotoxin and oxaliplatin suggests that alteration of voltage-gated Na(+) channel kinetics is likely to underlie the acute neurotoxic actions of oxaliplatin.

Generic Architecture and Semiconductor Intellectual Property Cores for Avanced Encryption Standard Cryptography

A generic architecture for implementing the advanced encryption standard (AES) encryption algorithm in silicon is proposed. This allows the instantiation of a wide range of chip specifications, with these taking the form of semiconductor intellectual property (IP) cores. Cores implemented from this architecture can perform both encryption and decryption and support four modes of operation: (i) electronic codebook mode; (ii) output feedback mode; (iii) cipher block chaining mode; and (iv) ciphertext feedback mode. Chip designs can also be generated to cover all three AES key lengths, namely 128 bits, 192 bits and 256 bits. On-the-fly generation of the round keys required during decryption is also possible. The general, flexible and multi-functional nature of the approach described contrasts with previous designs which, to date, have been focused on specific implementations. The presented ideas are demonstrated by implementation in FPGA technology. However, the architecture and IP cores derived from this are easily migratable to other silicon technologies including ASIC and PLD and are capable of covering a wide range of modem communication systems cryptographic requirements. Moreover, the designs produced have a gate count and throughput comparable with or better than the previous one-off solutions.

Surface plasmons in layered structures with semiconductor and metallic films

The complete spectrum of eigenwaves including surface plasmon polaritons (SPP), dynamic (bulk) and complex waves in the layered structures containing semiconductor and metallic films has been explored. The effects of loss, geometry and the parameters of dielectric layers on the eigenmode spectrum and, particularly, on the SPP modes have been analysed using both the asymptotic and rigorous numerical solutions of the full-wave dispersion equation. The field and Poynting vector distributions have been examined to identify the modes and elucidate their properties. It has been shown that losses and dispersion of permittivity qualitatively alter the spectral content and the eigenwave properties. The SPP counter-directional power fluxes in the film and surrounding dielectrics have been attributed to vortices of power flow, which are responsible for the distinctive features of SPP modes. It has been demonstrated for the first time that the maximal attainable slow-wave factor of the SPP modes guided by thin Au films at optical frequencies is capped not by losses but the frequency dispersion of the actual Au permittivity. © 2009 EDP Sciences.