Phenomenology and system engineering of micro- and nano-antenna FPA sensors for detection of concealed weapons and improvised explosive devices

The ability of millimetre wave and terahertz systems to penetrate clothing is well known. The fact that the transmission of clothing and the reflectivity of the body vary as a function of frequency is less so. Several instruments have now been developed to exploit this capability. The choice of operating frequency, however, has often been associated with the maturity and the cost of the enabling technology rather than a sound systems engineering approach. Top level user and systems requirements have been derived to inform the development of design concepts. Emerging micro and nano technology concepts have been reviewed and we have demonstrated how these can be evaluated against these requirements by simulation using OpenFx. Openfx is an open source suite of 3D tools for modeling, animation and visualization which has been modified for use at millimeter waves. © 2012 SPIE.

Preparation of Highly Stable OEG derivatives-functionalized AuNPs and Its Application in LSPR-based Detection of PSA/ACT Complex

The zero-length crosslinker EDC has been widely used to make amide bonds between carboxylic acid and amine groups for bioconjugation because no residues remain in the crosslinked protein. During the conjugation process, EDC activates the carboxyl groups (negatively charged) and forms an unstable amine-reactive intermediate (positively charged). However, the process turns to be a problematic issue if it is applied to modify carboxyl-functionalized and –stabilized Au nanoparticles (AuNPs) due to the fact that the negatively repulsive forces which help to stabilize the AuNPs were disrupted leading to the colloid aggregation. Therefore, to modify the negatively carboxyl-terminated AuNPs while their stability can be maintained yet, we assume that functionalization of the AuNPs using 02 kinds of negatively charged groups which one serves as a linking agent, and the other one plays a role of negative charge maintainer could overcome the impediment.

In this study, the colloidal gold nanoparticles were synthesized by Turkevitch’s method, and then their surface was rationally functionalized with different molar ratios of HS(CH2)11(OCH2CH2)6OCH2COOH and HS(CH2)11(OCH2CH2)3OH (OEG6-COOH/OEG3-OH) by self assembling technique. As a result, the most appropriate molar ratio was found to be 1:10, and the AuNP aggregation was prevented not only in the activation process by EDC but also in the present of high concentration of NaCl as well as over in a wide pH range. This is the first time that extremely stable OEG derivatives-functionalized Au nanoparticles for protein bioconjugation using EDC chemistry is reported, and the results open the door for covalent bioconjugation of AuNPs in biological applications.

Fluence dependence of the surface roughness of InP after N2 + bombardment

InP(1 0 0) surfaces were sputtered under ultrahigh vacuum conditions by 5 keV N2+ ions at an angle of incidence of 41° to the sample normal. The fluence, φ, used in this study, varied from 1 × 10¹⁴ to 5 × 10¹⁸ N2+ cm^-2. The surface topography was investigated using field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). At the lower fluences (φ ≤ 5 × 10¹⁶ N2+ cm^-2) only conelike features appeared, similar in shape as was found for noble gas ion bombardment of InP. At the higher fluences, ripples also appeared on the surface. The bombardment-induced topography was quantified using the rms roughness. This parameter showed a linear relationship with the logarithm of the fluence. A model is presented to explain this relationship. The ripple wavelength was also determined using a Fourier transform method. These measurements as a function of fluence do not agree with the predictions of the Bradley-Harper theory. © 2004 Elsevier B.V. All rights reserved.

Multi-Level Wordline Driver for Low Power SRAMs in Nano-Scale CMOS Technology

In this paper, a multi-level wordline driver scheme is presented to improve SRAM read and write stability while lowering power consumption during hold operation. The proposed circuit applies a shaped wordline voltage pulse during read mode and a boosted wordline pulse during write mode. During read, the applied shaped pulse is tuned at nominal voltage for short period of time, whereas for the remaining access time, the wordline voltage is reduced to a lower level. This pulse results in improved read noise margin without any degradation in access time which is explained by examining the dynamic and nonlinear behavior of the SRAM cell. Furthermore, during hold mode, the wordline voltage starts from a negative value and reaches zero voltage, resulting in a lower leakage current compared to conventional SRAM. Our simulations using TSMC 65nm process show that the proposed wordline driver results in 2X improvement in static read noise margin while the write margin is improved by 3X. In addition, the total leakage of the proposed SRAM is reduced by 10% while the total power is improved by 12% in the worst case scenario of a single SRAM cell. The total area penalty is 10% for a 128Kb standard SRAM array.

Multi-level wordline driver for robust SRAM design in nano-scale CMOS technology

In this paper, a multi-level wordline driver scheme is presented to improve 6T-SRAM read and write stability. The proposed wordline driver generates a shaped pulse during the read mode and a boosted wordline during the write mode. During read, the shaped pulse is tuned at nominal voltage for a short period of time, whereas for the remaining access time, the wordline voltage is reduced to save the power consumption of the cell. This shaped wordline pulse results in improved read noise margin without any degradation in access time for small wordline load. The improvement is explained by examining the dynamic and nonlinear behavior of the SRAM cell. Furthermore, during the hold mode, for a short time (depending on the size of boosting capacitance), wordline voltage becomes negative and charges up to zero after a specific time that results in a lower leakage current compared to conventional SRAM. The proposed technique results in at least 2× improvement in read noise margin while it improves write margin by 3× for lower supply voltages than 0.7 V. The leakage power for the proposed SRAM is reduced by 2% while the total power is improved by 3% in the worst case scenario for an SRAM array. The main advantage of the proposed wordline driver is the improvement of dynamic noise margin with less than 2.5% penalty in area. TSMC 65 nm technology models are used for simulations.

Nano-structural investigation of Ag/Al2O3 catalyst for selective removal of O-2 with excess H-2 in the presence of C2H4

Ag/gamma-Al2O3 catalysts have been characterized in-depth during different thermo-chemical treatments by in situ diffuse reflectance UV-visible spectroscopy and quasi in situ Transmission Electron Microscopy. The combination of these techniques indicates that sintering and redispersion of silver is clearly observed from the increases and decreases in the absorption band intensity over the range of 250-600 nm due to the presence of silver clusters and silver nanoparticles. These results allow us to study the effect of the reaction feed on the metal dispersion at different operation conditions and discuss the formation of active sites during the selective catalytic reduction of O-2 with excess H-2 in the presence of unsaturated hydrocarbons. In this case high catalytic activity and selectivity toward the oxygen removal was achieved for this catalyst. (C) 2010 Elsevier B.V. All rights reserved.

Investigation of Finish-cut of Microelectrodischarge Milling for Nano Surface Finish

In this article, the machining conditions to achieve nanometric surface roughness in finish cut microelectrodischarge milling were investigated. For a constant gap voltage, the effect of feed rate and capacitance was studied on average surface roughness (Ra) and maximum peak-to-valley roughness height (Ry). Statistical models were developed using a three-level, two-factor experimental design. The developed models minimized Ra and Ry by desirability function approach. Maximum desirability was found to be more than 98%. The minimum values of Ra and Ry were 23 and 173 nm, respectively, for 1.00 μm s-1 feed rate and 0.01 nF capacitance. Verification experiments were conducted to check the accuracy of the models, where the responses were found to be very close to the predicted values. Thus, the developed models can be used to generate nanometric level surface finish, which are useful for many applications in microelectromechanical systems.

Zinc selenide nano- and microspheres via microwave-assisted ionothermal synthesis

Zinc selenide nanospheres were prepared from a diphenyl diselenide precursor and a range of chloro- and bromozincate(II) ionic liquids via a microwave-assisted ionothermal route; this is the first report on the use of microwave irradiation in combination with ionic liquids to prepare this material. The method is a time-efficient and a facile one-pot reaction to produce zinc(II) selenide nanomaterials. The product formation in the ionic liquids has been monitored using Raman spectroscopy. The products have been characterised using PXRD, SEM, EDX, photoluminescence and UV-VIS spectroscopy. Advantages of this new route, such as ease of solubilisation of all reactants into one phase at high concentration, the negligible vapour pressure irrespective of the reaction temperature, very fast reaction times, ease of potential scale-up and reproducibility are discussed.

Some current problems in perovskite nano-ferroelectrics and multiferroics: kinetically-limited systems of finite lateral size

We describe some unsolved problems of current interest; these involve quantum critical points in
ferroelectrics and problems which are not amenable to the usual density functional theory, nor to
classical Landau free energy approaches (they are kinetically limited), nor even to the Landau–
Kittel relationship for domain size (they do not satisfy the assumption of infinite lateral diameter)
because they are dominated by finite aperiodic boundary conditions.

High-Performance WSe2 CMOS Technology and Integrated Circuits.

Because of their extraordinary structural and electrical properties, two dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (~38) and small static power (Pico-Watts), paving the way for low power electronic system in 2D materials.