70 resultados para Laser science

em QUB Research Portal - Research Directory and Institutional Repository for Queen's University Belfast


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Experiments on laser-induced ion acceleration from ultra-thin (nm) foil targets reveal a dramatic increase in the conversion efficiency and the acceleration of C6$+$ions in a phase stable way by the laser radiation pressure.

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The energy transfer by stimulated Brillouin backscatter from a long pump pulse (15 ps) to a short seed pulse (1 ps)has been investigated in a proof-of-principle demonstration experiment. The two pulses were both amplified in differentbeamlines of a Nd:glass laser system, had a central wavelength of 1054 nm and a spectral bandwidth of 2 nm, and crossedeach other in an underdense plasma in a counter-propagating geometry, off-set by 10◦. It is shown that the energy transferand the wavelength of the generated Brillouin peak depend on the plasma density, the intensity of the laser pulses, and thecompetition between two-plasmon decay and stimulated Raman scatter instabilities. The highest obtained energy transferfrom pump to probe pulse is 2.5%, at a plasma density of 0.17ncr, and this energy transfer increases significantly withplasma density. Therefore, our results suggest that much higher efficiencies can be obtained when higher densities (above0.25ncr) are used.

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We report on the unequal spacing attosecond pulse trains from relativistic surface plasmas. The surface high harmonics efficiency is determined and could be enhanced using an optimized plasma scale length and density.

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We present a new dual-gas multi-jet HHG source which can be perfectly controlled via phasematching of the long and short trajectory contributions and is applicable for high average power driver laser systems. © 2011 Optical Society of America.

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Photon yields for the 1s(2)-1s2p (He-alpha) transition of He- like ions have been measured for laser irradiated, thin foils of Ti, V and Fe. The laser pulses were of 0.527 mum wavelength and of either 80 or 300 ps duration. The data shows significant shot-to-shot variation but the Ti data is broadly consistent with previous results. In this work, we extend the previous results to include, new elements, longer pulse lengths and yields measured for emission from both surfaces of the foils. We compare our data to simulations using a hydrodynamic code and a collisional radiative model.

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We present a technique for simultaneous focusing and energy selection of high-current, mega-electron volt proton beams With the use of radial, transient electric fields (107 to 1010 volts per meter) triggered on the inner walls of a hollow microcylinder by an intense subpicosecond laser pulse. Because of the transient nature of the focusing fields, the proposed method allows selection of a desired range out of the spectrum of the polyenergetic proton beam. This technique addresses current drawbacks of laser-accelerated proton beams, such as their broad spectrum and divergence at the source.

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Sputtered silicon is investigated as a bonding layer for transfer of pre-processed silicon layers to various insulating substrates. Although the material appears suitable for low temperature processing, previous work has shown that gas trapped in the pores of the sputtered material is released at temperatures above 350 degrees C and further increases of temperature lead to destruction of any bonded interface. Pre-annealing at 1000 degrees C before bonding drives out gas and/or seals the surface, but for device applications where processing temperatures must be kept below about 300 degrees C, this technique cannot be used. In the current work, we have investigated the effect of excimer laser-annealing to heat the sputtered silicon surface to high temperature whilst minimising heating of the underlying substrate. Temperature profile simulations are presented and the results of RBS, TEM and AFM used to characterise the annealed layers. The results verify that gases are present in the sub-surface layers and suggest that while sealing of the surface is important for suppression of the out-diffusion of gases, immediate surface gas removal may also play a role. The laser-annealing technique appears to be an effective method of treating sputtered silicon, yielding a low roughness surface suitable for wafer bonding, thermal splitting and layer transfer.

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Gas temperature is of major importance in plasma based surface treatment, since the surface processes are strongly temperature sensitive. The spatial distribution of reactive species responsible for surface modification is also influenced by the gas temperature. Industrial applications of RF plasma reactors require a high degree of homogeneity of the plasma in contact with the substrate. Reliable measurements of spatially resolved gas temperatures are, therefore, of great importance. The gas temperature can be obtained, e.g. by optical emission spectroscopy (OES). Common methods of OES to obtain gas temperatures from analysis of rotational distributions in excited states do not include the population dynamics influenced by cascading processes from higher electronic states. A model was developed to evaluate this effect on the apparent rotational temperature that is observed. Phase resolved OES confirmed the validity of this model. It was found that cascading leads to higher apparent temperatures, but the deviation (~25 K) is relatively small and can be ignored in most cases. This analysis is applied to investigate axially and radially resolved temperature profiles in an inductively coupled hydrogen RF discharge.

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We describe a collisional-radiative equilibrium model for predicting the optical emission spectrum of low-temperature magnesium plasmas, specifically those created by laser ablation. In the model, levels are populated by a balance of collisional and radiative rates. We include Stark widths of lines and trapping of radiation in the calculations. By use of this model we discuss various issues of importance in spectral analysis of laser ablated plasma plumes, such as the partial local thermodynamic equilibrium approximation, line trapping and time dependence.