2 resultados para Galium arsenide
em QUB Research Portal - Research Directory and Institutional Repository for Queen's University Belfast
Resumo:
The field of surface polariton physics really took off with the prism coupling techniques developed by Kretschmann and Raether, and by Otto. This article reports on the construction and operation of a rotatable, in vacuo, variable temperature, Otto coupler with a coupling gap that can be varied by remote control. The specific design attributes of the system offer additional advantages to those of standard Otto systems of (i) temperature variation (ambient to 85 K), and (ii) the use of a valuable, additional reference point, namely the gap-independent reflectance at the Brewster angle at any given, fixed temperature. The instrument is placed firmly in a historical context of developments in the field. The efficacy of the coupler is demonstrated by sample attenuated total reflectance results on films of platinum, niobium, and yttrium barium copper oxide and on aluminum/gallium arsenide (Al/GaAs) Schottky diode structures. (C) 2000 American Institute of Physics. [S0034-6748(00)02411-4].
Resumo:
A rectangular waveguide-to-microstrip transition operating at G-band is presented. The E-plane probe, used in the transition, is fabricated on semi-insulating gallium arsenide (SI-GaAs) and it is elevated on the substrate. This configuration reduces interaction with semiconductor material. The elevated probe is suitable for direct integration with monolithic microwave integrated circuits. Measured results show S11 better than 210dB between 150 and 200 GHz and S21 ¼ 2 4dB at centre band (180GHz) for two transitions in back-to-back configuration.