Exploring figures of merit associated with the suboptimum operation of class-E power amplifiers

Closed-form design equations for the operation of a class-E amplifier for zero switch voltage slope and arbitrary duty cycle are derived. This approach allows an additional degree of freedom in the design of class-E amplifiers which are normally designed for 50 duty ratio. The analysis developed permits the selection of non-unique solutions where amplifier efficiency is theoretically 100 but power output capability is less than that the 50 duty ratio case would permit. To facilitate comparison between 50 (optimal) and non-50 (suboptimal) duty ratio cases, each important amplifier parameter is normalised to its corresponding optimum operation value. It is shown that by choosing a non-50 suboptimal solution, the operating frequency of a class-E amplifier can be extended. In addition, it is shown that by operating the amplifier in the suboptimal regime, other amplifier parameters, for example, transistor output capacitance or peak switch voltage, can be included along with the standard specification criteria of output power, DC supply voltage and operating frequency as additional input design specifications. Suboptimum class-E operation may have potential advantages for monolithic microwave integrated circuit realisation as lower inductance values (lower series resistance, higher self-resonance frequency, less area) may be required when compared with the results obtained for optimal class-E amplifier synthesis. The theoretical analysis conducted here was verified by harmonic balance simulation, with excellent agreement between both methods. © The Institution of Engineering and Technology 2007.

Comparative analysis of nanoscale MOS device architectures for RF applications

This paper provides valuable design insights for optimizing device parameters for nanoscale planar and vertical SOI MOSFETs. The suitability of nanoscale non-planar FinFETs and classical planar single and double gate SOI MOSFETs for rf applications is examined via extensive 3D device simulations and detailed interpretation. The origin of higher parasitic capacitance in FinFETs, compared to planar MOSFETs is examined. RF figures of merit for planar and vertical MOS devices are compared, based on layout-area calculations.

Design and optimization of FinFETs for ultra-low-voltage analog applications

In this paper, we analyze the enormous potential of engineering source/drain extension (SDE) regions in FinFETs for ultra-low-voltage (ULV) analog applications. SDE region design can simultaneously improve two key analog figures of merit (FOM)-intrinsic de gain (A(vo)) and cutoff frequency (f(T)) for 60 and 30 nm FinFETs operated at low drive current (J(ds) = 5 mu A/mu m). The improved Avo and fT are nearly twice compared to those of devices with abrupt SDE regions. The influence of the SDE region profile and its impact on analog FOM is extensively analyzed. Results show that SDE region optimization provides an additional degree of freedom apart from device parameters (fin width and aspect ratio) to design future nanoscale analog devices. The results are analyzed in terms of spacer-to-straggle ratio a new design parameter for SDE engineered devices. This paper provides new opportunities for realizing future ULV/low-power analog design with FinFETs.

The impact of the intrinsic and extrinsic resistances of double gate SOI on RF performance

In this paper, the analogue performance of a 65 nm node double gate Sol (DGSOI) is qualitatively investigated using MixedMode simulation. The intrinsic resistance of the device is optimised by evaluating the impact of the source/drain engineering using variation of spacers and doping profile on the RF key figures of merit such as f(T), and f(MAX). It is evident that longer spacers, which approach the length of the gate offer better RF performance irrespective of the profile as long as the doping gradient at the gate edge is <7 nm/decade. Analytical expressions, which reflect the dependence of f(T), and fMAX on extrinsic source, drain and gate resistances R-S, R-D and R-G have been derived. While R-D and R-S have equal effect on f(T), R-D appears to be more influential than R-S in reducing f(MAX). The sensitivity of f(MAX) to R-S and R-D. has been shown to be greater than to R-G. (c) 2006 Elsevier Ltd. All rights reserved.

Radiotherapy in the presence of contrast agents: a general figure of merit and its application to gold nanoparticles

Delivering sufficient dose to tumours while sparing surrounding tissue is one of the primary challenges of radiotherapy, and in common practice this is typically achieved by using highly penetrating MV photon beams and spatially shaping dose. However, there has been a recent increase in interest in the possibility of using contrast agents with high atomic number to enhance the dose deposited in tumours when used in conjunction with kV x-rays, which see a significant increase in absorption due to the heavy element's high-photoelectric cross-section at such energies. Unfortunately, the introduction of such contrast agents significantly complicates the comparison of different source types for treatment efficacy, as the dose deposited now depends very strongly on the exact composition of the spectrum, making traditional metrics such as beam quality less valuable. To address this, a 'figure of merit' is proposed, which yields a value which enables the direct comparison of different source types for tumours at different depths inside a patient. This figure of merit is evaluated for a 15 MV LINAC source and two 150 kVp sources (both of which make use of a tungsten target, one with conventional aluminium filtration, while the other uses a more aggressive thorium filter) through analytical methods as well as numerical models, considering tissue treated with a realistic concentration and uptake ratio of gold nanoparticle contrast agents (10 mg ml(-1) concentration in 'tumour' volume, 10: 1 uptake ratio). Finally, a test case of human neck phantom is considered with a similar contrast agent to compare the abstract figure to a more realistic treatment situation. Good agreement was found both between the different approaches to calculate the figure of merit, and between the figure of merit and the effectiveness in a more realistic patient scenario. Together, these observations suggest that there is the potential for contrast-enhanced kilovoltage radiation to be a useful therapeutic tool for a number of classes of tumour on dosimetric considerations alone, and they point to the need for further research in this area.

Analysis and Design of Class-E3F and Transmission-Line Class-E3F2 Power Amplifiers

In this paper, analysis and synthesis approach for two new variants within the Class-EF power amplifier (PA) family is elaborated. These amplifiers are classified here as Class-E3 F2 and transmission-line (TL) Class-E3 F 2. The proposed circuits offer means to alleviate some of the major issues faced by existing topologies such as substantial power losses due to the parasitic resistance of the large inductor in the Class-EF load network and deviation from ideal Class-EF operation due to the effect of device output inductance at high frequencies. Both lumped-element and transmission-line load networks for the Class-E 3 F PA are described. The load networks of the Class-E3 F and TL Class-E 3 F2amplifier topologies developed in this paper simultaneously satisfy the Class-EF optimum impedance requirements at fundamental frequency, second, and third harmonics as well as simultaneously providing matching to the circuit optimum load resistance for any prescribed system load resistance. Optimum circuit component values are analytically derived and validated by harmonic balance simulations. Trade-offs between circuit figures of merit and component values with some practical limitations being considered are discussed. © 2010 IEEE.

Role of environmental correlations in the non-Markovian dynamics of a spin system

We study the dynamics of a chain of interacting quantum particles affected by an individual or collective environment(s), focusing on the role played by the environmental quantum correlations over the evolution of the chain. The presence of entanglement in the state of the environment magnifies the non-Markovian nature of the chain's dynamics, giving rise to structures in figures of merit such as spin entanglement and purity that are not observed under a separable environmental state. Our analysis can be relevant to problems tackling the open-system dynamics of biological complexes of strong current interest.

Predominance of entanglement of formation over quantum discord under quantum channels

We present a study of the behavior of two different figures of merit for quantum correlations, entanglement of formation and quantum discord, under quantum channels showing how the former can, counterintuitively, be more resilient to such environments spoiling effects. By exploiting strict conservation relations between the two measures and imposing necessary constraints on the initial conditions we are able to explicitly show this predominance is related to build-up of the system-environment correlations.

Effective cutting of a quantum spin chain by bond impurities

Spin chains are promising media for short-haul quantum communication. Their usefulness is manifested in all those situations where stationary information carriers are involved. In the majority of the communication schemes relying on quantum spin chains, the latter are assumed to be finite in length, with well-addressable end-chain spins. In this paper we propose that such a configuration could actually be achieved by a mechanism that is able to effectively cut a spin ring through the insertion of bond defects. We then show how suitable physical quantities can be identified as figures of merit for the effectiveness of the cut. We find that, even for modest strengths of the bond defect, a ring is effectively cut at the defect site. In turn, this has important effects on the amount of correlations shared by the spins across the resulting chain, which we study by means of a scattering-based mechanism of a clear physical interpretation. © 2013 American Physical Society.

Out-of-equilibrium thermodynamics of quantum optomechanical systems

We address the out-of-equilibrium thermodynamics of an isolated quantum system consisting of a cavity optomechanical device. We explore the dynamical response of the system when driven out of equilibrium by a sudden quench of the coupling parameter and compute analytically the full distribution of the work generated by the process. We consider linear and quadratic optomechanical coupling, where the cavity field is parametrically coupled to either the position or the square of the position of a mechanical oscillator, respectively. In the former case we find that the average work generated by the quench is zero, whilst the latter leads to a non-zero average value. Through fluctuations theorems we access the most relevant thermodynamical figures of merit, such as the free energy difference and the amount of irreversible work generated. We thus provide a full charac- terization of the out-of-equilibrium thermodynamics in the quantum regime for nonlinearly coupled bosonic modes. Our study is the first due step towards the construction and full quantum analysis of an optomechanical machine working fully out of equilibrium.

Source/drain extension region engineering in nanoscale double gate SOI MOSFETs: Novel design methodology for low-voltage analog applications

The present paper proposes for the first time, a novel design methodology based on the optimization of source/drain extension (SDE) regions to significantly improve the trade-off between intrinsic voltage gain (A(vo)) and cut-off frequency (f(T)) in nanoscale double gate (DG) devices. Our results show that an optimally designed 25 nm gate length SDE region engineered DG MOSFET operating at drain current of 10 mu A/mu m, exhibits up to 65% improvement in intrinsic voltage gain and 85% in cut-off frequency over devices designed with abrupt SIDE regions. The influence of spacer width, lateral source/drain doping gradient and symmetric as well as asymmetrically designed SDE regions on key analog figures of merit (FOM) such as transconductance (g(m)), transconductance-to-current ratio (g(m)/I-ds), Early voltage (V-EA), output conductance (g(ds)) and gate capacitances are examined in detail. The present work provides new opportunities for realizing future low-voltage/low-power analog circuits with nanoscale SDE engineered DG MOSFETs. (C) 2007 Elsevier B.V. All rights reserved.

Source/drain extension region engineering in FinFETs for low-voltage analog applications

In this letter, we propose a novel design methodology for engineering source/drain extension (SDE) regions to simultaneously improve intrinsic dc gain (A(vo)) and cutoff frequency (f(T)) of 25-nm gate-length FinFETs operated at low drain-current (I-ds = 10 mu A/mu m). SDE region optimization in 25-nm FinFETs results in exceptionally high values of Avo (similar to 45 dB) and f(T) (similar to 70 GHz), which is nearly 2.5 times greater when compared to devices designed with abrupt SDE regions. The influence of spacer width, lateral source/drain doping gradient, and the spacer-to-gradient ratio on key analog figures of merit is examined in detail. This letter provides new opportunities for realizing future low-voltage/low-power analog design with nanoscale SDE-engineered FinFETs.

Transmission-Line Class-E Power Amplifier With Extended Maximum Operating Frequency

A novel Class-E power amplifier (PA) topology with transmission-line load network is presented in this brief. When compared with the classic Class-E topology, the new circuit can increase the maximum operating frequency up to 50% higher without trading the other Class-E figures of merit. Neither quarterwave line/massive radio-frequency choke for collector/drain biasing nor additional fundamental-frequency output matching circuit are needed in the proposed PA, thus resulting in a compact design. Closed-form formulations are derived and verified by simulations with practical design limitations carefully taken into consideration and good agreement achieved.

High-efficiency low-voltage-stress Class-EF PA with extended maximum operating frequency

The Class-EF power amplifier (PA) introduced recently has a peak switch voltage much lower than the well-known Class-E PA. However, the value of the transistor output capacitance at high frequencies is typically larger than the required Class-EF optimum shunt capacitance. As a result, softswitching operation that minimizes power dissipation during OFF-to-ON transient cannot be achieved at high frequencies. A novel Class-EF topology with transmission-line load network proposed in this paper allows the PA to operate at much higher frequencies without trading the other figures of merit. Closed-form formulations are derived to simultaneously satisfy the Class-EF impedances requirement at fundamental frequency, all even harmonics, and the first two odd harmonics as well as to provide matching to 50O load. © 2011 Institut fur Mikrowellen.