Statistical theory of finite Fermi systems with chaotic excited eigenstates

A theory of strongly interacting Fermi systems of a few particles is developed. At high excit at ion energies (a few times the single-parti cle level spacing) these systems are characterized by an extreme degree of complexity due to strong mixing of the shell-model-based many-part icle basis st at es by the residual two- body interaction. This regime can be described as many-body quantum chaos. Practically, it occurs when the excitation energy of the system is greater than a few single-particle level spacings near the Fermi energy. Physical examples of such systems are compound nuclei, heavy open shell atoms (e.g. rare earths) and multicharged ions, molecules, clusters and quantum dots in solids. The main quantity of the theory is the strength function which describes spreading of the eigenstates over many-part icle basis states (determinants) constructed using the shell-model orbital basis. A nonlinear equation for the strength function is derived, which enables one to describe the eigenstates without diagonalization of the Hamiltonian matrix. We show how to use this approach to calculate mean orbital occupation numbers and matrix elements between chaotic eigenstates and introduce typically statistical variable s such as t emperature in an isolated microscopic Fermi system of a few particles.

Positronium scattering by lithium

We report cross sections for Ps(1s)-Li(2s) scattering in the energy range up to 30 eV. The calculations have been carried out in a coupled state approximation. The Ps states consist of both eigenstates and pseudostates. the latter to allow for ionization of the Ps. The atom is treated as a frozen core represented by it model potential which supports the valence orbitals. The coupled state expansion includes only the 2s and 2p states of the atom as well as in unphysical Is state which exists in the model potential. The inclusion of this Is state is necessary in order to avoid pronounced false pseudostructure. Results are presented for excitation and ionization of the Ps as well as collisions in which the Ps(1s) remains unchanged. These results also differentiate between the case where the Li(2s) remains unexcited and where it is excited to the 2p level. (c) 2005 Published by Elsevier B.V.

Electron recombination with multicharged ions via chaotic many-electron states

We show that a dense spectrum of chaotic multiply excited eigenstates can play a major role in collision processes involving many-electron multicharged ions. A statistical theory based on chaotic properties of the eigenstates enables one to obtain relevant energy-averaged cross sections in terms of sums over single-electron orbitals. Our calculation of low-energy electron recombination of Au25+ shows that the resonant process is 200 times more intense than direct radiative recombination, which explains the recent experimental results of Hoffknecht [J. Phys. B 31, 2415 (1998)].

Time operator for diffusion

Volume: 11 Issue: 4 Pages: 465-477 Published: MAR 2000 Times Cited: 9 References: 15 Citation MapCitation Map beta Abstract: We extend the concept of time operator for general semigroups and construct a non-self-adjoint time operator for the diffusion equation which is intertwined with the unilateral shift. We obtain the spectral resolution, the age eigenstates and a new shift representation of the solution of the diffusion equation. Based on previous work we obtain similarly a self-adjoint time operator for Relativistic Diffusion. (C) 2000 Elsevier Science Ltd. All rights reserved.

Effective collision strengths for electron-impact excitation of S X

Effective collision strengths computed by the R-matrix method are presented for the electron-impact excitation of nitrogen-like S X. The total wave function used in the expansion includes the lowest 11 eigenstates of S X which arise from the 2s(2)2p(3), 2s2p(4), 2p(5) and 2s(2)2p(2)3s configurations. These 11 LS target states correspond to 22 fine-structure levels, giving 231 possible transitions. All the effective collision strengths for these transitions are tabulated in the range log T(K) = 4.6 to log T(K) = 6.7. The energy level values and oscillator strengths for allowed transitions are also tabulated. The effective collision strengths were calculated by averaging the electron collision strengths over a Maxwellian distribution of velocities. The present effective collision strengths are the only results currently available for these fine-structure transition rates. (C) 2000 Academic Press.

Mixing of dielectronic and multiply-excited states in electron-ion recombination: a study of Au24+

It has been suggested (Gribakin et al 1999 Aust. J. Phys. 52 443–57, Flambaum et al 2002 Phys. Rev. A 66 012713) that strongly enhanced low-energy electron recombination observed in Au25+ (Hoffknecht et al 1998 J. Phys. B: At. Mol. Opt. Phys. 31 2415–28) is mediated by complex multiply excited states, while simple dielectronic excitations play the role of doorway states for the electron capture process. We present the results of an extensive study of con?guration mixing between doubly excited (doorway) states and multiply excited states which account for the large electron recombination rate on Au25+ . A detailed analysis of spectral statistics and statistics of eigenstate components shows that the dielectronic doorway states are virtually ‘dissolved’ in complicated chaotic multiply excited eigenstates. This work provides a justi?cation for the use of statistical theory to calculate the recombination rates of Au25+ and similar complex multiply charged ions. We also investigate approaches which allow one to study complex chaotic many-body eigenstates and criteria of strong con?guration mixing, without diagonalizing large Hamiltonian matrices.

Electron recombination, photoionization, and scattering via many-electron compound resonances

Highly excited eigenstates of atoms and ions with open f shell are chaotic superpositions of thousands, or even millions, of Hartree-Fock determinant states. The interaction between dielectronic and multielectronic configurations leads to the broadening of dielectronic recombination resonances and relative enhancement of photon emission due to opening of thousands of radiative decay channels. The radiative yield is close to 100% for electron energy <1 eV and rapidly decreases for higher energies due to opening of many autoionization channels. The same mechanism predicts suppression of photoionization and relative enhancement of the Raman scattering. Results of our calculations of the recombination rate are in agreement with the experimental data for W20+ and Au25+.

Low-energy behavior of strongly interacting bosons on a flat-band lattice above the critical filling factor

Bosons interacting repulsively on a lattice with a flat lowest band energy dispersion may, at sufficiently small filling factors, enter into a Wigner-crystal-like phase. This phase is a consequence of the dispersionless nature of the system, which in turn implies the occurrence of single-particle localized eigenstates. We investigate one of these systems-the sawtooth lattice-filled with strongly repulsive bosons at filling factors infinitesimally above the critical point where the crystal phase is no longer the ground state. We find, in the hard-core limit, that the crystal retains its structure in all but one of its cells, where it is broken. The broken cell corresponds to an exotic kind of repulsively bound state, which becomes delocalized. We investigate the excitation spectrum of the system analytically and find that the bound state behaves as a single particle hopping on an effective lattice with reduced periodicity, and is therefore gapless. Thus, the addition of a single particle to a flat-band system at critical filling is found to be enough to make kinetic behavior manifest.

Effective collision strengths for forbidden transitions among the 3s23p3 fine-structure levels of Cl III

Effective collision strengths for the 10 astrophysically important fine-structure forbidden transitions among the ⁴S^o, ²D^o and ²P^o levels in the 3s²3p³ configuration of Cl III are presented. The calculation employs the multichannel R-matrix method to compute the electron-impact excitation collision strengths in a close-coupling expansion, which incorporates the lowest 23 LS target eigenstates of Cl III. These states are formed from the 3s²3p³, 3s3p⁴, 3s²3p²3d and 3s²3p²4s configurations. The Maxwellian-averaged effective collision strengths are presented graphically for all 10 fine-structure transitions over a wide range of electron temperatures appropriate for astrophysical applications [log T(K) = 3.3 - log T(K) = 5.9]. Comparisons are made with the earlier seven-state close-coupling calculation of Butler & Zeippen, and in general excellent agreement is found in the low-temperature region where a comparison is possible [log T(K) = 3.3 - log T(K) = 4.7]. However, discrepancies of up to 30 per cent are found to occur for the forbidden transitions which involve the ⁴S^o ground state level, particularly for the lowest temperatures considered. At the higher temperatures, the present data are the only reliable results currently available.

Effective collision strengths for fine-structure forbidden transitions among the 2s22p3 levels of S x

Effective collision strengths for electron-impact excitation of the N-like ion S x are calculated in the close-coupling approximation using the multichannel R-matrix method. Specific attention is given to the 10 astrophysically important fine-structure forbidden transitions among the ⁴S^O, ²D^o and ²P^o levels in the 2s²2p³ ground configuration. The total (e^- + ion) wavefunction is expanded in terms of the 11 lowest LS eigenstates of S x, and each eigenstate is represented by extensive configuration-interaction wavefunctions. The collision strengths obtained are thermally averaged over a Maxwellian distribution of velocities, for all 10 fine-structure transitions, over the range of electron temperatures log T(K) = 4.6-6.7 (the range appropriate for astrophysical applications). The present effective collision strengths are the only results currently available for these fine-structure transition rates.

Effective collision strengths for fine-structure forbidden transitions among the 2s22p3 levels of Ne IV

Effective collision strengths for electron-impact excitation of the N-like ion NeIV are calculated in the close-coupling approximation using the multichannel R-matrix method. Specific attention is given to the 10 astrophysically important fine-structure forbidden transitions among the ⁴S^o, ²D^o and ²P^o levels in the 2s²2p³ ground-state configuration. The expansion of the total wavefunction incorporates the lowest 11 LS eigenstates of NeIV, consisting of eight n = 2 terms with configurations 2s²2p³, 2s2p⁴ and 2p⁵, together with three n = 3 states of configuration 2s²2p²3s. We present in graphical form the effective collision strengths obtained by thermally averaging the collision strengths over a Maxwellian distribution of velocities, for all 10 fine-structure transitions, over the range of electron temperatures log T(K) = 3.6 to log T(K) = 6.1 (the range appropriate for astrophysical applications). Comparisons are made with the earlier, less sophisticated close-coupling calculation of Giles, and excellent agreement is found in the limited temperature region where a comparison is possible [log T(K) = 3.7 to log 7(K) = 4.3]. At higher temperatures the present data are the only reliable results currently available.

Effective collision strengths for fine-structure forbidden transitions among the 3s 23p 3 levels of Ar IV

The multichannel R-matrix method is used to compute electron impact excitation collision strengths in Ar IV for all fine-structure transitions among the ⁴S°, ²D° and ²P° levels in the 3s ²3p ³ ground configuration. Included in the expansion of the total wavefunction are the lowest 13 LS target eigenstates of Ar iv formed from the 3s ²3p ³, 3s3p ⁴ and 3s ²3p ²3d configurations. The effective collision strengths, obtained by averaging the electron collision strengths over a Maxwellian distribution of electron velocities, are presented for all 10 fine-structure transitions over a wide range of electron temperatures of astrophysical interest (T _e = 2000-100 000 K). Comparisons are made with an earlier 7-state close-coupling calculation by Zeippen, Butler & Le Bourlot, and significant differences are found to occur for many of the forbidden transitions considered, in particular those involving the ⁴S° ground state, where discrepancies of up to a factor of 3 are found in the low-temperature region. © 1997 RAS.

Level-resolved quantum statistical theory of electron capture into many-electron compound resonances in highly charged ions

The strong mixing of many-electron basis states in excited atoms and ions with open f shells results in very large numbers of complex, chaotic eigenstates that cannot be computed to any degree of accuracy. Describing the processes which involve such states requires the use of a statistical theory. Electron capture into these “compound resonances” leads to electron-ion recombination rates that are orders of magnitude greater than those of direct, radiative recombination and cannot be described by standard theories of dielectronic recombination. Previous statistical theories considered this as a two-electron capture process which populates a pair of single-particle orbitals, followed by “spreading” of the two-electron states into chaotically mixed eigenstates. This method is similar to a configuration-average approach because it neglects potentially important effects of spectator electrons and conservation of total angular momentum. In this work we develop a statistical theory which considers electron capture into “doorway” states with definite angular momentum obtained by the configuration interaction method. We apply this approach to electron recombination with W²⁰⁺, considering 2×10⁶ doorway states. Despite strong effects from the spectator electrons, we find that the results of the earlier theories largely hold. Finally, we extract the fluorescence yield (the probability of photoemission and hence recombination) by comparison with experiment.