The mid-infrared dielectric function of NBCO in the a-b plane from 85 K to 300 K

Results are reported on the a-b plane dielectric function (epsilon) of thin-film c-axis NdBa2Cu3O7-delta with close to optimal oxygen doping (T-c similar to 90 K) in the mid-infrared (wavelength 3.392 mum) over the temperature range 85 K to 300 K. An attenuated total reflectance technique based on the excitation of surface plasmon polaritons is used. The results show that \epsilon (r)\ decreases quasi-linearly with increasing temperature, while Ei is invariant with temperature to within experimental uncertainties. Representative values are epsilon = [epsilon (r) + i epsilon (i)] = (-12.9 +/- 0.6) + i(23.0 +/- 1.5) at T similar to 295 K and epsilon = (-15.7 +/- 0.7) + i(23.5 +/- 1.1) at T similar to 90 K. The raw data an interpreted in terms of the generalized Drude model which gives effective scattering rates (1/tau*) that increase with temperature from about 3800 cm(-1) at 90 K to about 4300 cm(-1) at 295 K. There are indications of a superlinear T-dependence in the scattering, 1/tau*: a fit to a function of the form 1/tau* = A + BTalpha gives alpha = 2.8 +/- 0.7. The effective plasma frequency, omega (p)*, with an average value of approximately 21 000 cm(-1) was independent of temperature.

Carrefours de la sociocritique. E´ dite´ par ANTHONY GLINOER. (¼ Texte: revue de critique et de the´orie litte´raire, 45/46). Toronto: E´ ditions Trintexte, 2009. 227 pp. Pb CAD $35.00

French Studies (2012) 66 (1): 125-126 doi:10.1093/fs/knr208

Drivers of inequality in disability-free expectancy at birth and age 85 across space and time in Great Britain

Background: Although mortality and health inequalities at birth have increased both geographically and in socioeconomic terms, little is known about inequalities at age 85, the fastest growing sector of the population in Great Britain (GB).

Aim: To determine whether trends and drivers of inequalities in life expectancy (LE) and disability-free life expectancy (DFLE) at age 85 between 1991 and 2001 are the same as those at birth.

Methods: DFLE at birth and age 85 for 1991 and 2001 by gender were calculated for each local authority in GB using the Sullivan method. Regression modelling was used to identify area characteristics (rurality, deprivation, social class composition, ethnicity, unemployment, retirement migration) that could explain inequalities in LE and DFLE.

Results: Similar to values at birth, LE and DFLE at age 85 both increased between 1991 and 2001 (though DFLE increased less than LE) and gaps across local areas widened (and more for DFLE than LE). The significantly greater increases in LE and DFLE at birth for less-deprived compared with more-deprived areas were still partly present at age 85. Considering all factors, inequalities in DFLE at birth were largely driven by social class composition and unemployment rate, but these associations appear to be less influential at age 85.

Conclusions: Inequalities between areas in LE and DFLE at birth and age 85 have increased over time though factors explaining inequalities at birth (mainly social class and unemployment rates) appear less important for inequalities at age 85.

Characterization of optical properties of PtSi at 3.392 mu m from 300 K to 85 K and relation of morphological effects

PtSi/Si Schottky junctions, fabricated using a conventional technique of Pt deposition with a subsequent thermal anneal, are examined using X-ray diffraction, atomic force microscopy and a novel prism/gap/sample optical coupling system. With the aid of X-ray diffraction and atomic farce microscopy it is shown that a post-anneal etch in aqua regia is essential for the removal of an unreacted, rough surface layer of Pt, to leave a much smoother PtSi film. The prism/gap/sample or Otto coupling rig is mounted in a small UHV chamber and has facilities for remote variation of the gap (by virtue of a piezoactuator system) and variation of the temperature in the range of similar to 300 K - 85 K. The system is used to excite surface plasmon polaritons on the outer surface of the PtSi and thus produce sensitive optical characterisation as a function of temperature. This is performed in order to yield an understanding of the temperature dependence of phonon and interface scattering of carriers in the PtSi.