CMOS compatible RF MEMS switches with serpentine springs

This paper describes a serpentine flexure spring design and fabrication process development for radio frequency microelectromechanical (RF MEMS) capacitive switches with coplanar waveguide (CPW) lines. Sputtered tungsten is employed as the CPW line conductor instead of Au, a non-Si compatible material. The bridge membrane is fabricated from Al. The materials and fabrication process can be integrated with CMOS and SOI technology to reduce cost. Results show the MEMS switch has excellent performance with insertion loss 0.3dB, return loss -27dB at 30GHz and high isolation -30dB at 40GHz. The process developed promises to simplify the design and fabrication of RF MEMS on silicon.

Low-cost digital signature architecture suitable for radio frequency identification tags

Continuing achievements in hardware technology are bringing ubiquitous computing closer to reality. The notion of a connected, interactive and autonomous environment is common to all sensor networks, biosystems and radio frequency identification (RFID) devices, and the emergence of significant deployments and sophisticated applications can be expected. However, as more information is collected and transmitted, security issues will become vital for such a fully connected environment. In this study the authors consider adding security features to low-cost devices such as RFID tags. In particular, the authors consider the implementation of a digital signature architecture that can be used for device authentication, to prevent tag cloning, and for data authentication to prevent transmission forgery. The scheme is built around the signature variant of the cryptoGPS identification scheme and the SHA-1 hash function. When implemented on 130 nm CMOS the full design uses 7494 gates and consumes 4.72 mu W of power, making it smaller and more power efficient than previous low-cost digital signature designs. The study also presents a low-cost SHA-1 hardware architecture which is the smallest standardised hash function design to date.

Passive Intermodulation in Printed Lines: Effects of Trace Dimensions and Substrate

A comprehensive experimental study was performed to identify and discriminate mechanisms contributing to passive intermodulation (PIM) in microstrip transmission lines. The effects of strip length and width, and substrate materials on PIM performance of printed lines were investigated in the GSM900, DCS1800 and UMTS frequency bands. The major features of the experiment design, sample preparation and test setup are discussed in detail. The measurement results have demonstrated that the PIM level cumulatively grows on the longer microstrip lines and decreases on wider strips and, thus, indicated that the distributed resistive nonlinearity of the printed traces represents the dominant mechanism of intermodulation generation in the printed lines on PTFE-based substrates. © 2009 The Institution of Engineering and Technology.

Passive Intermodulation Generation on Printed Lines: Near-Field Probing and Observations

The phenomenological mechanisms of passive intermodulation (PIM) in printed lines have been explored by mapping intermodulation products generated by the two-tone traveling waves in microstrip lines. Near-field probing based upon a commercial PIM analyzer has been employed for identification of the PIM sources in printed lines. The results of extensive near-field probing provide the direct experimental evidences of cumulative growth of the intermodulation products in the matched uniform microstrip lines and reveal the fundamental role of the nonlinear scattering by the lumped nonlinear inclusions in the intermodulation production. The distributed nature of the PIM generation in microstrip lines has been conclusively demonstrated and comprehensively described in terms of the four-wave mixing process that proved to be fully consistent with the results of experimental observations of third-order PIM products on the matched and mismatched microstrip lines. © 2006 IEEE.