An adaptable and scalable asymmetric cryptographic processor

In this paper a novel scalable public-key processor architecture is presented that supports modular exponentiation and Elliptic Curve Cryptography over both prime GF(p) and binary GF(2) extension fields. This is achieved by a high performance instruction set that provides a comprehensive range of integer and polynomial basis field arithmetic. The instruction set and associated hardware are generic in nature and do not specifically support any cryptographic algorithms or protocols. Firmware within the device is used to efficiently implement complex and data intensive arithmetic. A firmware library has been developed in order to demonstrate support for numerous exponentiation and ECC approaches, such as different coordinate systems and integer recoding methods. The processor has been developed as a high-performance asymmetric cryptography platform in the form of a scalable Verilog RTL core. Various features of the processor may be scaled, such as the pipeline width and local memory subsystem, in order to suit area, speed and power requirements. The processor is evaluated and compares favourably with previous work in terms of performance while offering an unparalleled degree of flexibility. © 2006 IEEE.

Design of silicon IP cores for biorthogonal wavelet transforms

A methodology for rapid silicon design of biorthogonal wavelet transform systems has been developed. This is based on generic, scalable architectures for the forward and inverse wavelet filters. These architectures offer efficient hardware utilisation by combining the linear phase property of biorthogonal filters with decimation and interpolation. The resulting designs have been parameterised in terms of types of wavelet and wordlengths for data and coefficients. Control circuitry is embedded within these cores that allows them to be cascaded for any desired level of decomposition without any interface logic. The time to produce silicon designs for a biorthogonal wavelet system is only the time required to run synthesis and layout tools with no further design effort required. The resulting silicon cores produced are comparable in area and performance to hand-crafted designs. These designs are also portable across a range of foundries and are suitable for FPGA and PLD implementations.

A new Jacobian matrix for optimal learning of single-layer neural networks

This paper investigates the learning of a wide class of single-hidden-layer feedforward neural networks (SLFNs) with two sets of adjustable parameters, i.e., the nonlinear parameters in the hidden nodes and the linear output weights. The main objective is to both speed up the convergence of second-order learning algorithms such as Levenberg-Marquardt (LM), as well as to improve the network performance. This is achieved here by reducing the dimension of the solution space and by introducing a new Jacobian matrix. Unlike conventional supervised learning methods which optimize these two sets of parameters simultaneously, the linear output weights are first converted into dependent parameters, thereby removing the need for their explicit computation. Consequently, the neural network (NN) learning is performed over a solution space of reduced dimension. A new Jacobian matrix is then proposed for use with the popular second-order learning methods in order to achieve a more accurate approximation of the cost function. The efficacy of the proposed method is shown through an analysis of the computational complexity and by presenting simulation results from four different examples.

Source/drain extension region engineering in nanoscale double gate SOI MOSFETs: Novel design methodology for low-voltage analog applications

The present paper proposes for the first time, a novel design methodology based on the optimization of source/drain extension (SDE) regions to significantly improve the trade-off between intrinsic voltage gain (A(vo)) and cut-off frequency (f(T)) in nanoscale double gate (DG) devices. Our results show that an optimally designed 25 nm gate length SDE region engineered DG MOSFET operating at drain current of 10 mu A/mu m, exhibits up to 65% improvement in intrinsic voltage gain and 85% in cut-off frequency over devices designed with abrupt SIDE regions. The influence of spacer width, lateral source/drain doping gradient and symmetric as well as asymmetrically designed SDE regions on key analog figures of merit (FOM) such as transconductance (g(m)), transconductance-to-current ratio (g(m)/I-ds), Early voltage (V-EA), output conductance (g(ds)) and gate capacitances are examined in detail. The present work provides new opportunities for realizing future low-voltage/low-power analog circuits with nanoscale SDE engineered DG MOSFETs. (C) 2007 Elsevier B.V. All rights reserved.