111 resultados para ferroelectric


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Heterointerface stabilization of a distinct nonpolar BiFeO3 phase occurs simultaneously with changes in octahedral tilts. The resulting phase arises via suppression of polarization by a structural order parameter and can thus be identified as anti-ferroelectric (Fe displacements - bottom panel). The phase is metastable and can be switched into a polar ferroelectric state (top panel) under an applied electric bias.

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Nonlinear optics is an essential component of modern laser systems and optoelectronic devices. It has also emerged as an important tool in probing the electronic, vibrational, magnetic, and crystallographic structure of materials ranging from oxides and metals, to polymers and biological samples. This review focuses on the specific technique of optical second harmonic generation (SHG), and its application in probing ferroelectric complex oxide crystals and thin films. As the dominant SHG interaction mechanism exists only in materials that lack inversion symmetry, SHG is a sensitive probe of broken inversion symmetry, and thus also of bulk polar phenomena in materials. By performing in-situ SHG polarimetry experiments in different experimental conditions such as sample orientation, applied electric field, and temperature, one can probe ferroelectric hysteresis loops and phase transitions. Careful modeling of the polarimetry data allows for the determination of the point group symmetry of the crystal. In epitaxial thin films with a two-dimensional arrangement of well-defined domain orientations, one can extract information about intrinsic material properties such as nonlinear coefficients, as well as microstructural information such as the local statistics of the different domain variants being probed. This review presents several detailed examples of ferroelectric systems where such measurements and modeling are performed. The use of SHG microscopic imaging is discussed, and its ability to reveal domain structures and phases not normally visible with linear optics is illustrated.

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We have analyzed the ferroelastic and ferroelectric domain structure of high crystalline quality (001) BiFeO3 films on orthorhombic (110) TbScO3 substrates. Two domains were present in stripes separated by (010) vertical boundaries, with spontaneous polarizations in adjacent domains rotated by 109 degrees. The striped morphology was caused by nucleation of only two ferroelastic domains on the low symmetry GdFeO3-type substrate. Domain engineering through substrate symmetry is an important finding for rhombohedral ferroelectric epitaxial thin films. The stripe pattern with vertical walls may be useful for extracting domain wall contributions to magnetism and electrical transport properties of BiFeO3 materials.

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We have investigated the nanoscale switching properties of strain-engineered BiFeO(3) thin films deposited on LaAlO(3) substrates using a combination of scanning probe techniques. Polarized Raman spectral analysis indicates that the nearly tetragonal films have monoclinic (Cc) rather than P4mm tetragonal symmetry. Through local switching-spectroscopy measurements and piezoresponse force microscopy, we provide clear evidence of ferroelectric switching of the tetragonal phase, but the polarization direction, and therefore its switching, deviates strongly from the expected (001) tetragonal axis. We also demonstrate a large and reversible, electrically driven structural phase transition from the tetragonal to the rhombohedral polymorph in this material, which is promising for a plethora of applications.

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Band excitation piezoresponse force microscopy enables local investigation of the nonlinear piezoelectric behavior of ferroelectric thin films. However, the presence of additional nonlinearity associated with the dynamic resonant response of the tip-surface junction can complicate the study of a material's nonlinearity. Here, the relative importance of the two nonlinearity sources was examined as a function of the excitation function. It was found that in order to minimize the effects of nonlinear tip-surface interactions but achieve good signal to noise level, an optimal excitation function must be used. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3593138]

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High-performance piezoelectrics are lead-based solid solutions that exhibit a so-called morphotropic phase boundary, which separates two competing phases as a function of chemical composition; as a consequence, an intermediate low-symmetry phase with a strong piezoelectric effect arises. In search for environmentally sustainable lead-free alternatives that exhibit analogous characteristics, we use a network of competing domains to create similar conditions across thermal inter-ferroelectric transitions in simple, lead-free ferroelectrics such as BaTiO 3 and KNbO 3. Here we report the experimental observation of thermotropic phase boundaries in these classic ferroelectrics, through direct imaging of low-symmetry intermediate phases that exhibit large enhancements in the existing nonlinear optical and piezoelectric property coefficients. Furthermore, the symmetry lowering in these phases allows for new property coefficients that exceed all the existing coefficients in both parent phases. Discovering the thermotropic nature of thermal phase transitions in simple ferroelectrics thus presents unique opportunities for the design of 'green' high-performance materials.

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Large areas of perfectly ordered magnetic CoFe2O4 nanopillars embedded in a ferroelectric BiFeO3 matrix were successfully fabricated via a novel nucleation-induced self-assembly process. The nucleation centers of the magnetic pillars are induced before the growth of the composite structure using anodic aluminum oxide (AAO) and lithography-defined gold membranes as hard mask. High structural quality and good functional properties were obtained. Magneto-capacitance data revealed extremely low losses and magneto-electric coupling of about 0.9 mu C/cmOe. The present fabrication process might be relevant for inducing ordering in systems based on phase separation, as the nucleation and growth is a rather general feature of these systems.

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We report on a low-damage method for direct and rapid fabrication of arrays of epitaxial BiFeO3(BFO) nanoislands. An array of aluminium dots is evaporated through a stencil mask on top of an epitaxial BiFeO3 thin film. Low energy focused ion beam milling of an area several microns wide containing the array-covered film leads to removal of the bismuth ferrite in between the aluminium-masked dots. By chemical etching of the remaining aluminium, nanoscale epitaxial bismuth ferrite islands with diameter ∼250 nm were obtained. Piezoresponse force microscopy showed that as-fabricated structures exhibited good piezoelectric and ferroelectric properties, with polarization state retention of several days.

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The 71 degrees stripe domain patterns of epitaxial BiFeO3 thin films are frequently being explored to achieve new functional properties, dissimilar from the BiFeO3 bulk properties. We show that in-plane switching and out-of-plane switching of these domains behave very differently. In the in-plane configuration the domains are very stable, whereas in the out-of-plane configuration the domains change their size and patterns, depending on the applied switching voltage frequency.

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Large range well ordered epitaxial ferrimagnetic nominally Fe3O4 structures were fabricated by pulsed-laser deposition and embedded in ferroelectric PbZrxTi1-xO3 (x = 0.2, 0.52) epitaxial films. Magnetite dots were investigated by magnetic force microscopy and exhibited magnetic domain contrast at room temperature (RT). Embedding ferroelectric PbZrxTi1-xO3 layers exhibit remnant polarization values close to the values of single epitaxial layers. Transmission electron microscopy demonstrated the epitaxial growth of the composites and the formation of the ferrimagnetic and ferroelectric phases. Physical and structural properties of these composites recommend them for investigations of stress mediated magneto-electric coupling at room temperature. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3692583]

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We report on differential etching behavior of the different orientations of the polarization in BiFeO3 (BFO), similar to other ferroelectrics, such as LiNbO3. We show how this effect can be used to fabricate epitaxial BiFeO3 nanostructures. By means of piezoresponse force microscopy (PFM) domains of arbitrary shape and size can be poled in an epitaxial BiFeO3 film, which are then reproduced in the film morphology by differential etching. Structures with a lateral size smaller than 200 nm were fabricated and very good retention properties as well as a highly increased piezoelectric response were detected by PFM. (C) 2011 American Institute of Physics. [doi:10.1063/1.3630027]

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In this paper we investigate the piezoelectric properties of PbTiO(3) thin films grown by pulsed laser deposition with piezoresponse force microscopy and transmission electron microscopy. The as-grown films exhibit an upward polarization, inhomogeneous distribution of piezoelectric characteristics concerning local coercive fields, and piezoelectric coefficient. In fact, the data obtained reveal imprints during piezoresponse force microscopy measurements, nonlinearity in the piezoelectric deformation, and limited polarization reversal. Moreover, transmission electron microscopy shows the presence of defects near the film/substrate interface, which can be associated with the variations of piezoelectric properties.

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Spatial variability of conductivity in ceria is explored using scanning probe microscopy (SPM) with galvanostatic control. Ionically blocking electrodes are used to probe the conductivity under opposite polarities to reveal possible differences in the defect structure across a thin film of CeO2. Data suggests the existence of a large spatial inhomogeneity that could give rise to constant phase elements during standard electrochemical characterization, potentially affecting the overall conductivity of films on the macroscale. The approach discussed here can also be utilized for other mixed ionic electronic conductor (MIEC) systems including memristors and electroresistors, as well as physical systems such as ferroelectric tunneling barriers.

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Epitaxial thin films Of various bismuth-layered perovskites SrBi(2)Ta(2)O(9), Bi(4)Ti(3)O(12), BaBi(4)Ti(4)O(15), and Ba(2)Bi(4)Ti(5)O(18) were deposited by pulsed laser deposition onto epitaxial conducting LaNiO(3) or SrRuO(3) electrodes on single crystalline SrTiO(3) substrates with different crystallographic orientations or on top of epitaxial buffer layers on (100) silicon. The conductive perovskite electrodes and the epitaxial ferroelectric films are strongly influenced by the nature of the substrate, and bismuth-layered perovskite ferroelectric films with mixed (100), (110)- and (001)-orientations as well as with uniform (001)-, (116)- and (103)- orientations have been obtained. Structure and morphology investigations performed by X-ray diffraction analysis, scanning probe microscopy, and transmission electron microscopy reveal the different epitaxial relationships between films and substrates. A clear correlation of the crystallographic orientation of the epitaxial films with their ferroelectric properties is illustrated by macroscopic and microscopic measurements of epitaxial bismuth-layered perovskite thin films of different crystallographic orientations.

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Epitaxial BaTiO3 films and BaTiO3/SrTiO3 multilayers were grown by pulsed laser deposition (PLD) on (001)-oriented Nb-doped SrTiO3 (SrTiO3:Nb) substrates. Measurements of the dielectric properties were performed comparing BaTiO3 films and BaTiO3/SrTiO3 multilayers of different number of individual layers, but equal overall thickness. The dielectric loss saturates for a thickness above 300 nm, and linearly decreases with decreasing film thickness below a thickness of 75 nm, and it is independent on the number of multilayers, pointing to some interface effect. The thickness dependence of the dielectric constant of BaTiO3 films and BaTiO3/SrTiO3 multilayers; exhibits a change in the linear slope at a thickness of 75 nm. This behavior is explained by the change observed in the morphology at a thickness of 75 nm. In order to explain the thickness dependence of the dielectric constant, two approaches are considered in this paper, viz. a "series capacitor" model and a "dead layer" model.