Absolute single and multiple charge exchange cross sections for highly charged C, O, and Ne ions on H2O, CO, and CO2

Reported herein are measured absolute single, double, and triple charge exchange (CE) cross sections for the highly charged ions (HCIs) Cq+ (q=5,6), Oq+ (q=6,7,8), and Neq+ (q=7,8) colliding with the molecular species H2O, CO, and CO2. Present data can be applied to interpreting observations of x-ray emissions from comets as they interact with the solar wind. As such, the ion impact energies of 7.0q keV (1.62–3.06 keV/amu) are representative of the fast solar wind, and data at 1.5q keV for O6+ (0.56 keV/amu) on CO and CO2 and 3.5q keV for O5+ (1.09 keV/amu) on CO provide checks of the energy dependence of the cross sections at intermediate and typical slow solar wind velocities. The HCIs are generated within a 14 GHz electron cyclotron resonance ion source. Absolute CE measurements are made using a retarding potential energy analyzer, with measurement of the target gas cell pressure and incident and final ion currents. Trends in the cross sections are discussed in light of the classical overbarrier model (OBM), extended OBM, and with recent results of the classical trajectory Monte Carlo theory.

Phase agile reflectarray cells based on liquid crystals

Experimental results at X-band are used to compare the electromagnetic scattering from a printed reflectarray cell, which is constructed on 500 mu m thick layers of three different nematic state liquid crystals. It is shown that a small voltage can be used to vary the permittivity of the tunable substrate and thereby control the phase of the reflected signals. Numerical results using Ansoft HFSS are compared with the measured phase, resonant frequencies and signal attenuation for two orientations of the liquid crystal molecules. Data fitting is employed to quantify the loss tangent and the permittivity values of the three anisotropic specimens. The performance trade-offs that are imposed by the use of commercially available materials are discussed, and the computer model is used to specify the electrical properties of a liquid crystal mixture, which can provide a signal loss of <1 dB and a dynamic phase range of 300 degrees from the patch elements at 10 GHz.

Ultra-thin tunable microwave absorber using liquid crystals

A dynamically adaptive radar absorber is described which is based on a periodic array of microstrip patches that are printed on a 500 mu m-thick liquid crystal substrate. The measured reflectivity of the structure is less than -38 dB with a 200 MHz -10 dB bandwidth at 10.19 GHz when a +4 DC bias is applied. It is shown that a 34 dB reduction in signal loss occurs when the bias voltage is increased to 20 V.

Dual-mode compact structure comprising of side-fed bifilar and quadrifilar helix antenna

A side-fed bifilar helix antenna can be integrated with a quadrifilar helix antenna in a piggy back configuration in order to achieve a dual-mode radiating structure. The overall length of the structure is 0.44 lambda at the resonant frequency (1.54 GHz) of the space mode antenna and 0.39 lambda at the resonant frequency (1.34 GHz) of the terrestrial mode antenna. The computed results are validated by experimental data.

Polarisation independent bandpass FSS

The spectral transmittance of a frequency selective surface (FSS), which consists of two free-standing arrays of short-circuited nested annular slots, is presented. The FSS was designed to provide a minimum of 20 dB isolation between the frequency bands 316.5-325.5 and 349.5-358.5 GHz when the filter operates in the TE and TM planes at 45 degrees incidence. Experimental results, which are in close agreement with the computed transmission coefficients, show that the maximum insertion loss is 0.9 dB, and the minimum cross-polar discrimination is at least 21 dB in the passbands. The FSS yields virtually identical spectral responses in the two polarisation planes over the frequency range 315-359 GHz.

Liquid crystal tunable mm wave frequency selective surface

A frequency selective surface (FSS) which exploits the dielectric anisotropy of liquid crystals to generate an electronically tunable bandpass filter response at D Band (110-170 GHz) is presented. The device consists of two printed arrays of slot elements which are separated by a 130-mu m thick layer of liquid crystals. A 3% shift in the filter passband occurs when the substrate permittivity is increased by applying a control signal of 10 V. Measured results show that the insertion loss increases from -3.7 dB to -10.4 dB at resonance (134 GHz), thus demonstrating the potential to create a FSS which can be switched between a transmitting and a reflecting structure.

Single sideband FSS with high image rejection

The design of a quasi-optical single sideband filter, which provides more than 30 dB of isolation between the frequency bands 294-305.5 and 329.5-341.5 GHz in the TM plane at 45 degrees incidence, is described. The structure, which consists of three free-standing arrays of dipole slot elements, generates a bandpass spectral response with an insertion loss below 0.5 dB at resonance. Simulated and measured transmission coefficients in the range 250-400 GHz are shown to be in good agreement.

Element suitability for circularly polarised phase agile reflectarray applications

The electrical characteristics of various elements that can be used as spatial phase shifters in circularly polarised (CP) reflectarrays are contrasted. The elements investigated are; a single rotating dipole at 10.3 GHz; a multiple dipole at 18.2 GHz; a rotating stub at 2.8 GHz; and a periphery point short-circuited circular patch at 3.0 GHz. For each element type, results are presented for the reflection phase, polarisation purity and reflection loss. Where appropriate, experiments are performed using the waveguide simulator technique to validate the numerical EM simulation.

Two-layer mm-wave FSS of linear slot elements with low insertion loss

The performance of a very low loss frequency selective surface (FSS) comprising two air spaced planar arrays of linear slot elements is reported. The beamsplitter generates a low loss passband response with a very sharp transmission roll-off with frequency. Simulated and measured results in the 30 GHz and 300 GHz wavebands are used to quantify the performance improvement compared to a conventional multilayer dielectrically backed conducting ring FSS. The paper also discusses the effect of the array dimensions on the passband width and filter roll-off rate.

Balanced class e amplifier based multimode modulator

In this paper we present an adaptation to the classical I/Q modulator topology which simultaneously allows it to operate both as a multi-modulation standard modulator, and as a high efficiency balanced amplifier. This is made possible by concurrently exploiting the ability of the Class E amplifiers to produce variable output power at maximum power added efficiency, PAE, by simple dc bias control while faithfully reproducing phase encoded signals. Experimental evidence for the behaviour of the modulator when operated in QPSK mode at 2.33 GHz with a 1 Msymbol/s rate shows that Error Vector Magnitude of less than 5% with amplifier PAE of 65% is possible. The multimode modulator presented here should lead to significantly reduced complexity, enhanced functionality transceivers for use in dc power sensitive handheld wireless applications. © 2007 EuMA.

Design strategies for dual-band class-e power amplifier using composite right/left-handed transmission lines

In this article we propose a technique for dual-band Class-E power amplifier design using composite right/left-handed transmission lines, CRLH TLs. Design equations are presented and design procedures are elaborated. Because of the nonlinear phase dispersion characteristic of CRLH TLs, the single previous attempt at applying this method to dual bond Class-E amplifier design was not sufficient to simultaneously satisfy, the minimum requirement of Class-E impedances at both the fundamental and the second harmonic frequencies. This article rectifies this situation. A design example illustrating the synthesis procedure for a 0.5W-5V dual band Class-E amplifier circuit simultaneously operated at 900 MHz and 2.4 GHz is given and compared with ADS simulation.

Inverse Class-E Amplifier With Transmission-Line Harmonic Suppression

This paper reports on the design methodology and experimental characterization of the inverse Class-E power amplifier. A demonstration amplifier with excellent second and third harmonic-suppression levels has been designed, constructed, and measured. The circuit fabricated using a 1.2-min gate-width GaAs MESFET is shown to be able to deliver 22-dBm output power at 2.3 GHz. The amplifier achieves a peak power-added efficiency of 64 % and drain efficiency of 69 %, and exhibits 11.6 dB power gain when operated from a 3-V supply voltage. Comparisons of simulated and measured results are given with good agreement between them being obtained. Experimental results are presented for the amplifier's response to Gaussian minimum shift keying modulation, where a peak error vector modulation value of 0.6% is measured.

Numerical analysis of bodyworn UHF antenna systems

Bodyworn antennas are found in a wide range of medical, military and personal communication applications, yet reliable communication from the surface of the human body still presents a range of engineering challenges. At UHF and microwave frequencies, bodyworn antennas can suffer from reduced efficiency due to electromagnetic absorption in tissue, radiation pattern fragmentation and variations in feed-point impedance. The significance and nature of these effects are system specific and depend on the operating frequency, propagation environment and physical constraints on the antenna itself. This paper describes how numerical electromagnetic modelling techniques such as FDTD (finite-difference time-domain) can be used in the design of bodyworn antennas. Examples are presented for 418 MHz, 916 .5 MHz and 2 . 45 GHz, in the context of both biomedical signalling and wireless personal-area networking applications such as the Bluetooth(TM)* wireless technology.

Source/drain extension region engineering in FinFETs for low-voltage analog applications

In this letter, we propose a novel design methodology for engineering source/drain extension (SDE) regions to simultaneously improve intrinsic dc gain (A(vo)) and cutoff frequency (f(T)) of 25-nm gate-length FinFETs operated at low drain-current (I-ds = 10 mu A/mu m). SDE region optimization in 25-nm FinFETs results in exceptionally high values of Avo (similar to 45 dB) and f(T) (similar to 70 GHz), which is nearly 2.5 times greater when compared to devices designed with abrupt SDE regions. The influence of spacer width, lateral source/drain doping gradient, and the spacer-to-gradient ratio on key analog figures of merit is examined in detail. This letter provides new opportunities for realizing future low-voltage/low-power analog design with nanoscale SDE-engineered FinFETs.

Accurate substrate modelling of RF CMOS

The losses within the substrate of an RF IC can have significant effect on performance in a mixed signal application. in order to model substrate coupling accurately, it is represented by an RC network to account for both resistive and dielectric losses at high frequency (> 1 GHz). A small-signal equivalent circuit model of an RF IC inclusive of substrate parasitic effect is analysed in terms of its y-parameters and an extraction procedure for substrate parameters has been developed. By coupling the extracted substrate parameters along with extrinsic resistances associated with gate, source and drain, a standard BSIM3 model has been extended for RF applications. The new model exhibits a significant improvement in prediction of output reflection coefficient S-22 in the frequency range from 1 to 10 GHz in device mode of operation and for a low noise amplifier (LNA) at 2.4 GHz. Copyright (C) 2006 John Wiley & Sons, Ltd.