131 resultados para diode-end-pumped


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The complex problem of a collisionally pumped Ne-like geranium laser is examined through several detailed models. The central model is EHYBRID; a 1 1/2D fluid code which self consistently treats the plasma expansion with the atomic physics of the Ne-like ion for 124 excited levels through a collisional radiative treatment. The output of EHYBRID is used as data for ray-tracing and saturation codes which generate experimental observables. A detailed description of the models is given.

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Recent developments and progress on collision pumped soft X-ray lasers using the VULCAN glass laser at Rutherford-Appleton Laboratory are presented. This includes saturated output operation of a double target germanium system within a low Fresnel number half-cavity, measurement of the spatial coherence of the output beam in the above and other geometries, use of the beam to demonstrate almost-equal-to 0.15 mum spatial resolution in a full-field microscope and initial studies of other Ne-like and Ni-like systems. Future directions, in the light of new developments of VULCAN facilities, are outlined.

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Schottky-barrier structures with a resistive metal electrode are examined using the 4-point probe method where the probes are connected to the metal electrode only. The observation of a significant decrease in resistance with increasing temperature (over a range of similar to 100 K) in the diode resistance-temperature (R(D)-T) characteristic is considered due to charge carrier confinement to the metal electrode at low temperature (high resistance), with the semiconductor progressively opening up as a parallel current carrying channel (low resistance) with increasing temperature due to increasing thermionic emission across the barrier. A simple model is constructed, based on thermionic emission at quasi-zero bias, that generates good fits to the experimental data. The negative differential resistance (NDR) region in the R(D)-T characteristic is a general effect and is demonstrated across a broad temperature range for a variety of Schottky structures grown on Si-, GaAs- and InP-substrates. In addition the NDR effect is harnessed in micro-scaled Pd/n-InP devices for the detection of low levels of hydrogen in an ambient atmosphere of nitrogen.

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End of award report for the funded research seminar series of the same name.

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A winner of the 2012 "15 Minutes of Fame" competition.