Electrical characterization of ALD Al2O3 and HfO2 films on germanium

Al2O3 and HfO2 films were deposited on germanium substrates by atomic layer deposition (ALD) and analyzed by MOS capacitor electrical characterization. In-situ plasma nitridation performed prior to ALD was found to improve the stability of the interface. For Al 2O3/GeON/Ge capacitors, a 450°C anneal in nitrogen ambient reduced hysteresis and oxide fixed charge to 90 mV and 1012 cm-2 respectively, with low leakage current density. On the contrary, degradation was observed for un-nitrided Al2O3/Ge capacitors after 300 and 400°C post-metal anneals. HfO2/GeON/Ge capacitors benefitted from a 400°C densification anneal but exhibited degradation after post-metal anneals at temperatures greater than 300°C. This degradation is attributed to the influence of Al electrodes on the HfO 2 gate stack. HfO2 is considered to be a suitable material for the gate stack and Al2O3 for the buried dielectric in a GeOI structure. ©The Electrochemical Society.

Ultra-lightweight true random number generators

A series of ultra-lightweight digital true random number generators (TRNGs) are presented. These TRNGs are based on the observation that, when a circuit switches from a metastable state to a bi-stable state, the resulting state may be random. Four such circuits with low hardware cost are presented: one uses an XOR gate; one uses a lookup table; one uses a multiplexer and an inverter; and one uses four transistors. The three TRNGs based on the first three circuits are implemented on a field programmable gate array and successfully pass the DIEHARD RNG tests and the National Institute of Standard and Technology (NIST) RNG tests. To the best of the authors' knowledge, the proposed TRNG designs are the most lightweight among existing TRNGs.