SATURATED AND NEAR DIFFRACTION-LIMITED ASE OUTPUT AT 23.6 NM

Amplification of spontaneous emission at 23.6 nm has been studied in a Ge plasma heated by a 1 TW, 1.06 mum wavelength, laser pulse. The exponent of the axial gain reached 21 in a geometry with Fresnel number less-than-or-equal-to 1. Two plasma columns were produced by irradiation of slab targets up to a combined length of 3.6 cm. A narrow band XUV mirror allowed double pass amplification. Saturation of ASE output at 23.6 nm was observed as a change from exponential to linear growth of the output with plasma length. Further evidence of the effect was provided by a decline in the ratio of the output at 23.6 nm to that at 23.2 nm from approximately 1.6: 1 to approximately 0.5: 1, the latter being the theoretically predicted value for saturated operation. The onset of saturation at gL almost-equal-to 15 is consistent with model calculations. The beam divergence was about 8x diffraction limited with a brightness estimated at almost-equal-to 10(14) W/cm2/ster.

SATURATED AND NEAR-DIFFRACTION-LIMITED OPERATION OF AN XUV LASER AT 23.6 NM

Amplification of spontaneous emission (ASE) at 23.6 nm has been studied in a Ge plasma heated by a 1 TW infrared laser pulse. The exponent of the axial gain reached 21 in a geometry with Fresnel number less-than-or-equal-to 1. Two plasma columns of combined length up to 36 mm were used with an extreme ultraviolet mirror giving double-pass amplification. Saturation of the ASE output was observed. The beam divergence was about 8 x diffraction limited with a brightness estimated at 10(14) W cm-2 sr-1. The feedback from the mirror was significantly reduced probably by radiation damage from the plasma.

Angularly separated harmonic generation from intense laser interaction with blazed diffraction gratings

We made numerical simulations of the generation of narrowband beams of extreme ultraviolet radiation from intense laser interaction with a blazed grating surface. Strong fifth harmonic emission into its blazed diffraction order was observed as well as heavy suppression of the fundamental frequency with comparison to a typical harmonic spectrum from a flat target. The results demonstrate a new highly efficient method of generating near-monochromatic harmonics from the fundamental with minimal effect on the pulse duration. (C) 2011 Optical Society of America

Diffraction-limited performance and focusing of high harmonics from relativistic plasmas

When a pulse of light reflects from a mirror that is travelling close to the speed of light, Einstein's theory of relativity predicts that it will be up-shifted to a substantially higher frequency and compressed to a much shorter duration. This scenario is realized by the relativistically oscillating plasma surface generated by an ultraintense laser focused onto a solid target. Until now, it has been unclear whether the conditions necessary to exploit such phenomena can survive such an extreme interaction with increasing laser intensity. Here, we provide the first quantitative evidence to suggest that they can. We show that the occurrence of surface smoothing on the scale of the wavelength of the generated harmonics, and plasma denting of the irradiated surface, enables the production of high-quality X-ray beams focused down to the diffraction limit. These results improve the outlook for generating extreme X-ray fields, which could in principle extend to the Schwinger limit.

Asymptotic modeling of short plane-parallel high-pressure glow discharge

Here a self-consistent continuum model is presented for a narrow gap plane-parallel dc glow discharge. The set of governing equations consisting of continuity and momentum equations for positive ions, fast (emitted by the cathode) and slow electrons (generated by fast electron impact ionization) coupled with Poisson's equation is treated by the technique of matched asymptotic expansions. Explicit results are obtained in the asymptotic limit: (chi delta) much less than 1, where chi = e Phi(a)/kT, delta = (r(D)/L)(2) (Phi(a) is the applied voltage, r(D) is the Debye radius) and pL much greater than 1(Hg mm cm), where p is the gas pressure and L is the gap length. In the case of high pressure, the electron energy relaxation length is much smaller than the gap length, and so the local field approximation is valid. The discharge space divides naturally into a cathode fall sheath, a quasineutral plasma region, and an anode fall sheath. The electric potential distribution obtained for each region in a (semi)analytical form is asymptotically matched to the adjoining regions in the region of overlap. The effects of the gas pressure, gap length, and applied voltage on the length of each region are investigated. (C) 2000 American Institute of Physics. [S1070-664X(00)01302-1].

Epitaxial strain and electric boundary condition effects on the structural and ferroelectric properties of BiFeO3 films

The influence of both compressive and tensile epitaxial strain along with the electrical boundary conditions on the ferroelastic and ferroelectric domain patterns of bismuth ferrite films was studied. BiFeO3 films were grown on SrTiO3(001), DyScO3(110), GdScO3(110), and SmScO3(110) substrates to investigate the effect of room temperature in-plane strain ranging from -1.4% to +0.75%. Piezoresponse force microscopy, transmission electron microscopy, x-ray diffraction measurements, and ferroelectric polarization measurements were performed to study the properties of the films. We show that BiFeO3 films with and without SrRuO3 bottom electrode have different growth mechanisms and that in both cases reduction of the domain variants is possible. Without SrRuO3, stripe domains with reduced variants are formed on all rare earth scandate substrates because of their monoclinic symmetry. In addition, tensile strained films exhibit a rotation of the unit cell with increasing film thickness. On the other side, the presence of SrRuO3 promotes step flow growth of BiFeO3. In case of vicinal SrTiO3 and DyScO3 substrates with high quality SrRuO3 bottom electrode and a low miscut angle of approximate to 0.15 degrees we observed suppression of the formation of certain domain variants. The quite large in-plane misfit of SrRuO3 with GdScO3 and SmScO3 prevents the growth of high quality SrRuO3 films and subsequent domain variants reduction in BiFeO3 on these substrates, when SrRuO3 is used as a bottom electrode.