154 resultados para D. NBLC model


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In this paper, we propose for the first time, an analytical model for short channel effects in nanoscale source/drain extension region engineered double gate (DG) SOI MOSFETs. The impact of (i) lateral source/drain doping gradient (d), (ii) spacer width (s), (iii) spacer to doping gradient ratio (s/d) and (iv) silicon film thickness (T-si), on short channel effects - threshold voltage (V-th) and subthreshold slope (S), on-current (I-on), off-current (I-on) and I-on/I-off is extensively analysed by using the analytical model and 2D device simulations. The results of the analytical model confirm well with simulated data over the entire range of spacer widths, doping gradients and effective channel lengths. Results show that lateral source/drain doping gradient along with spacer width can not only effectively control short channel effects, thus presenting low off-current, but can also be optimised to achieve high values of on-currents. The present work provides valuable design insights in the performance of nanoscale DG Sol devices with optimal source/drain engineering and serves as a tool to optimise important device and technological parameters for 65 nm technology node and below. (c) 2006 Elsevier Ltd. All rights reserved.

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Coffee model systems prepared from combinations of chlorogenic acid (CGA), N-alpha-acetyl-1-arginine (A), sucrose (S), and cellulose (C) were roasted at 240 degreesC for 4 min prior to analysis by UV-visible spectrophotometry, capillary zone electrophoresis (CZE), and the ABTS radical cation decolorization assay. The A/CGA/S/C and A/S/C systems were also fractionated by gel filtration chromatography. Antioxidant activity of the systems showed a positive, nonlinear relationship with the amount of CGA remaining after roasting. Sucrose degradation was a major source of color in the heated systems. There was no relationship between antioxidant activity and color generation.

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