SEM-EDX of morphology of electroless nickel coatings with tin and tungsten

Electroless plating of binary Ni-P, ternary Ni-Sn-P and Ni-W-P, and quaternary Ni-W-Sn-P alloy coatings was carried out in alkalicitrate baths. After the plating, several kinds of test were carried out to determine the improvement in the characteristics and properties due to the additional elements as well as to study the change in behaviour when heat treatment was applied to these coatings. The coatings were subjected to X-ray diffraction analysis where it was found that all the coatings were amorphous. Interesting surface morphology features were examined using scanning electron microscopy. Addition of a third element improved the hardness.

The synthesis, characterisation and reactivity of 2-phosphanylethylcyclopentadienyl complexes of cobalt, rhodium and iridium

2-Phosphanylethylcyclopentadienyl lithium compounds, Li[C5R'(4)(CH2)(2)PR2] (R = Et, R' = H or Me, R = Ph, R' = Me), have been prepared from the reaction of spirohydrocarbons C5R'(4)(C2H4) with LiPR2. C5Et4HSiMe2CH2PMe2, was prepared from reaction of Li[C5Et4] with Me2SiCl2 followed by Me2PCH2Li. The lithium salts were reacted with [RhCl(CO)2]2,[IrCl(CO)3] or [Co-2(CO)(8)] to give [M(C5R'(4)(CH2) 2PR2)(CO)] (M = Rh, R = Et, R' = H or Me, R= Ph, R' = Me; M = Ir or Co, R = Et, R' = Me), which have been fully characterised, in many cases crystallographically as monomers with coordination of the phosphorus atom and the cyclopentadienyl ring. The values of nu(CO) for these complexes are usually lower than those for the analogous complexes without the bridge between the cyclopentadienyl ring and the phosphine, the exception being [Rh(Cp'(CH2)(2)PEt2)(CO)] (Cp' = C5Me4), the most electron rich of the complexes. [Rh(C5Et4SiMe2CH2PMe2)(CO)] may be a dimer. [Co-2(CO)(8)] reacts with C5H5(CH2)(2)PEt2 or C5Et4HSiMe2CH2PMe2 (L) to give binuclear complexes of the form [Co-2(CO)(6)L-2] with almost linear PCoCoP skeletons. [Rh(Cp'(CH2)(2)PEt2)(CO)] and [Rh(Cp'(CH2)(2)PPh2)(CO)] are active for methanol carbonylation at 150 degrees C and 27 bar CO, with the rate using [Rh(Cp'(CH2)(2)PPh2)(CO)] (0.81 mol dm(-3) h(-1)) being higher than that for [RhI2(CO)(2)](-) (0.64 mol dm(-3) h(-1)). The most electron rich complex, [Rh(Cp'(CH2)(2)PEt2)(CO)] (0.38 mol dm(-3) h(-1)) gave a comparable rate to [Cp*Rh(PEt3)(CO)] (0.30 mol dm(-3) h(-1)), which was unstable towards oxidation of the phosphine. [Rh(Cp'(CH2)(2)PEt2)I-2], which is inactive for methanol carbonylation, was isolated after the methanol carbonylation reaction using [Rh(Cp'(CH2)(2)PEt2)(CO)].

Titania and tungsten doped titania thin films on glass; active photocatalysts

Acidification of an isopropanol solution containing mixtures of [Ti(OPri)(4)] and [W(OEt)(5)] produced solutions from which various TiO2, WO3 and TiO2/WO3 thin films could be obtained by dip coating and annealing. The films were analysed by X-ray diffraction, SEM/EDAX, Raman, electronic spectra, contact angle and photoactivity with respect to destruction of an over layer of stearic acid. The TiO2/WO3 films were shown to be mixtures of two phases TiO2 and WO3 rather than a solid solution TixWyO2. The 2% tungsten oxide doped titania films were shown to be the most effective photocatalysts. All of the TiO2 and TiO2/WO3 films showed light induced superhydrophillicity. (C) 2002 Elsevier Science Ltd. All rights reserved.

Solution-based synthesis of cobalt-doped ZnO thin films

Undoped and cobalt-doped (1-4 wt.%) ZnO polycrystalline, thin films have been fabricated on quartz substrates using sequential spin-casting and annealing of simple salt solutions. X-ray diffraction (XRD) reveals a wurzite ZnO crystalline structure with high-resolution transmission electron microscopy showing lattice planes of separation 0.26 nm, characteristic of (002) planes. The Co appears to be tetrahedrally co-ordinated in the lattice on the Zn sites (XRD) and has a charge of + 2 in a high-spin electronic state (X-ray photoelectron spectroscopy). Co-doping does not alter the wurzite structure and there is no evidence of the precipitation of cobalt oxide phases within the limits of detection of Raman and XRD analysis. Lattice defects and chemisorbed oxygen are probed using photoluminescence and Raman spectroscopy - crucially, however, this transparent semiconductor material retains a bandgap in the ultraviolet (3.30-3.48 eV) and high transparency (throughout the visible spectral regime) across the doping range. © 2012 Elsevier B.V.

Microwave Irradiation for the Facile Synthesis of Transition-Metal Nanoparticles (NPs) in Ionic Liquids (ILs) from Metal-Carbonyl Precursors and Ru-, Rh-, and Ir-NP/IL Dispersions as Biphasic Liquid-Liquid Hydrogenation Nanocatalysts for Cyclohexene

Stable chromium, molybdenum, tungsten, manganese, rhenium, ruthenium, osmium, cobalt, rhodium, and iridium metal nanoparticles (MNPs) have been reproducibly obtained by facile, rapid (3 min), and energysaving 10 W microwave irradiation (MWI) under an argon atmosphere from their metal–carbonyl precursors [Mx(CO)y] in the ionic liquid (IL) 1-butyl-3-methylimidazolium tetrafluoroborate ([BMIm][BF4]). This MWI synthesis is compared to UV-photolytic (1000 W, 15 min) or conventional thermal decomposition (180–2508C, 6–12 h) of [Mx(CO)y] in ILs. The MWIobtained nanoparticles have a very small (<5 nm) and uniform size and are prepared without any additional stabilizers or capping molecules as long-term stable M-NP/IL dispersions (characterization by transmission electron microscopy (TEM), transmission electron diffraction (TED), and dynamic light scattering (DLS)). The ruthenium, rhodium, or iridium nanoparticle/IL dispersions are highly active
and easily recyclable catalysts for the biphasic liquid–liquid hydrogenation of cyclohexene to cyclohexane with activities of up to 522 (mol product)(mol Ru)1h1 and 884 (mol product)(molRh)1h1 and give almost quantitative conversion within 2 h at 10 bar H2 and 908C. Catalyst poisoning experiments with CS2 (0.05 equiv per Ru) suggest a heterogeneous surface catalysis of RuNPs.

Cobalt-doped ZnO nanowires on quartz: Synthesis by simple chemical method and characterization

The synthesis of cobalt-doped ZnO nanowires is achieved using a simple, metal salt decomposition growth technique. A sequence of drop casting on a quartz substrate held at 100 degrees C and annealing results in the growth of nanowires of average (modal) length similar to 200 nm and diameter of 15 +/- 4 nm and consequently an aspect ratio of similar to 13. A variation in the synthesis process, where the solution of mixed salts is deposited on the substrate at 25 degrees C, yields a grainy film structure which constitutes a useful comparator case. X-ray diffraction shows a preferred [0001] growth direction for the nanowires while a small unit cell volume contraction for Co-doped samples and data from Raman spectroscopy indicate incorporation of the Co dopant into the lattice; neither technique shows explicit evidence of cobalt oxides. Also the nanowire samples display excellent optical transmission across the entire visible range, as well as strong photoluminescence (exciton emission) in the near UV, centered at 3.25 eV. (C) 2012 Elsevier B.V. All rights reserved.

Molecular dynamics simulation model for the quantitative assessment of tool wear during single point diamond turning of cubic silicon carbide

Silicon carbide (SiC) is a material of great technological interest for engineering applications concerning hostile environments where silicon-based components cannot work (beyond 623 K). Single point diamond turning (SPDT) has remained a superior and viable method to harness process efficiency and freeform shapes on this harder material. However, it is extremely difficult to machine this ceramic consistently in the ductile regime due to sudden and rapid tool wear. It thus becomes non trivial to develop an accurate understanding of tool wear mechanism during SPDT of SiC in order to identify measures to suppress wear to minimize operational cost.

In this paper, molecular dynamics (MD) simulation has been deployed with a realistic analytical bond order potential (ABOP) formalism based potential energy function to understand tool wear mechanism during single point diamond turning of SiC. The most significant result was obtained using the radial distribution function which suggests graphitization of diamond tool during the machining process. This phenomenon occurs due to the abrasive processes between these two ultra hard materials. The abrasive action results in locally high temperature which compounds with the massive cutting forces leading to sp3–sp2 order–disorder transition of diamond tool. This represents the root cause of tool wear during SPDT operation of cubic SiC. Further testing led to the development of a novel method for quantitative assessment of the progression of diamond tool wear from MD simulations.

Brittle-ductile transition during diamond turning of single crystal silicon carbide

In this experimental study, diamond turning of single crystal 6H-SiC was performed at a cutting speed of 1 m/s on an ultra-precision diamond turning machine (Moore Nanotech 350 UPL) to elucidate the microscopic origin of ductile-regime machining. Distilled water (pH value 7) was used as a preferred coolant during the course of machining in order to improve the tribological performance. A high magnification scanning electron microscope (SEM FIB- FEI Quanta 3D FEG) was used to examine the cutting tool before and after the machining. A surface finish of Ra=9.2 nm, better than any previously reported value on SiC was obtained. Also, tremendously high cutting resistance was offered by SiC resulting in the observation of significant wear marks on the cutting tool just after 1 km of cutting length. It was found out through a DXR Raman microscope that similar to other classical brittle materials (silicon, germanium, etc.) an occurrence of brittle-ductile transition is responsible for the ductile-regime machining of 6H-SiC. It has also been demonstrated that the structural phase transformations associated with the diamond turning of brittle materials which are normally considered as a prerequisite to ductile-regime machining, may not be observed during ductile-regime machining of polycrystalline materials.

Shear instability of nanocrystalline silicon carbide during nanometric cutting

The shear instability of the nanoscrystalline 3C-SiC during nanometric cutting at a cutting speed of 100?m/s has been investigated using molecular dynamics simulation. The deviatoric stress in the cutting zone was found to cause sp3-sp2 disorder resulting in the local formation of SiC-graphene and Herzfeld-Mott transitions of 3C-SiC at much lower transition pressures than that required under pure compression. Besides explaining the ductility of SiC at 1500?K, this is a promising phenomenon in general nanoscale engineering of SiC. It shows that modifying the tetrahedral bonding of 3C-SiC, which would otherwise require sophisticated pressure cells, can be achieved more easily by introducing non-hydrostatic stress conditions.

A theoretical assessment of surface defect machining and hot machining of nanocrystalline silicon carbide

In this paper, a newly proposed machining method named “surface defect machining” (SDM) [Wear, 302, 2013 (1124-1135)] was explored for machining of nanocrystalline beta silicon carbide (3C-SiC) at 300K using MD simulation. The results were compared with isothermal high temperature machining at 1200K under the same machining parameters, emulating ductile mode micro laser assisted machining (µ-LAM) and with conventional cutting at 300 K. In the MD simulation, surface defects were generated on the top of the (010) surface of the 3C-SiC work piece prior to cutting, and the workpiece was then cut along the <100> direction using a single point diamond tool at a cutting speed of 10 m/sec. Cutting forces, sub-surface deformation layer depth, temperature in the shear zone, shear plane angle and friction coefficient were used to characterize the response of the workpiece. Simulation results showed that SDM provides a unique advantage of decreased shear plane angle which eases the shearing action. This in turn causes an increased value of average coefficient of friction in contrast to the isothermal cutting (carried at 1200 K) and normal cutting (carried at 300K). The increase of friction coefficient however was found to aid the cutting action of the tool due to an intermittent dropping in the cutting forces, lowering stresses on the cutting tool and reducing operational temperature. Analysis shows that the introduction of surface defects prior to conventional machining can be a viable choice for machining a wide range of ceramics, hard steels and composites compared to hot machining.