53 resultados para Thin film Photovoltaics
Resumo:
The Curie-Weiss plots of reciprocal dielectric constant versus temperature, in Ba0.5Sr0.5TiO3 films grown onto SrRuO3 lower electrodes by pulsed-laser deposition, show two minima below film thicknesses of 280 nm. This double minima implies possible mixed phases in the thin films. A graphical plot of capacitance for decreasing dc voltage versus that of increasing dc voltage shows a well-defined triangular shape for both Pb(Zr0.4Ti0.6)O-3 and SrBi2Ta2O9 thin films. However, for a 175-nm-thick Ba0.5Sr0.5TiO3 thin film, the plot shows an overlapping of two triangles, suggesting mixed phases. This graphical method appears to be effective in detecting structural subtleties in ferroelectric capacitors.
Resumo:
This paper shows that penetration of the applied electric field into the electrodes of a ferroelectric thin film capacitor produces both an interfacial capacitance and an effective mechanism for electron tunneling. The model predictions are compared with experimental results on Au-BST-SrRuO3 capacitors of varying thicknesses, and the agreement is excellent.
Resumo:
A conventional thin film capacitor heterostructure, consisting of sol-gel deposited lead zirconium titanate (PZT) layers with sputtered platinum top and bottom electrodes, was subjected to fatiguing pulses at a variety of frequencies. The fatigue characteristics were compared to those of a similarly processed capacitor in which a ~20nm tungsten trioxide layer had been deposited, using pulsed laser deposition, between the ferroelectric and upper electrode. The expectation was that, because of its ability to accommodate considerable oxygen non-stoichiometry, tungsten trioxide (WO3) might act as an efficient sink for any oxygen vacancies flushed to the electrode-ferroelectric boundary layer during repetitive switching, and hence would improve the fatigue characteristics of the thin film capacitor. However, it was found that, in general, the addition of tungsten trioxide actually increases the rate of fatigue. It appears that any potential benefit from the WO3, in terms of absorbing oxygen vacancies, is far outweighed by it causing dramatically increased charge injection in the system.
Resumo:
Scanning tunnelling microscope (STM) tip-induced light emission from Au and Ag has been studied. Thin film samples similar to100nm thick were prepared by thermal evaporation at 0.5nm/s onto a room-temperature glass substrate to produce grains of 20-50nm in lateral dimension at the surface. Light emission from the samples in the STM was quasi-simultaneously recorded with the topography, at 1.8V tip bias and 3-40nA current, alternating pixel by pixel at the same bias. Typically, a surface scan range of 150 nm x 150 nm was surveyed. Au, W and PtIr tips were used.
Resumo:
High levels of ozone (typically 850 ppm) are readily decomposed by semiconductor photocatalysis, using a thin film of the semiconductor titanium dioxide (Degussa P25 TiO2) cast on a glass tube, and UVA light, i.e. light of energy greater than that of the bandgap of the semiconductor (ultra-bandgap light); in the absence of this light the thermal decomposition of ozone is relatively slow. The semiconductor films show no evidence of chemical or photochemical wear with repeated use. At high levels of ozone, i.e. 100 ppm less than or equal to [O-3] less than or equal to 1400 ppm, the initial rate of ozone decomposition by semiconductor photocatalysis is independent of [O-3], whereas, at lower ozone concentrations, i.e. 5 ppm less than or equal to [O-3] less than or equal to 100 ppm, the initial rate of ozone photodestruction decreases in a smooth, but non-linear, manner with decreasing [O-3]. The kinetics of ozone photodecomposition fit a Langmuir-Hinshelwood type kinetic equation and the possible mechanistic implications of these results are briefly discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
Resumo:
A homologous family of dialkyl phthalates has been used to investigate the effect of plasticizer/polymer compatibility on the response characteristics of transparent, plastic, thin optical gas sensing films for CO2 and oxygen. Plasticizer/polymer compatibilities were determined through the value of the difference in solubility parameter, i.e. Delta delta, for the plasticizer and polymer with a Delta delta value of zero indicating high compatibility. A strong correlation was found between plasticizer/polymer compatibility and sensitivity in phenol red/ethyl cellulose CO2-sensitive films and this relationship extended to CO2-sensitive films based on other polymers such as polystyrene and poly(methyl methacrylate). It extended also to optical O-2-sensitive films implying that the relationship is general for thin-film optical sensors. Other results from the CO2-sensitive films in different polymers indicated that the film sensitivity is largely independent of the polymer matrix regardless of its inherent gas permeability, when a sufficient quantity of compatible plasticizer is present. (C) 1998 Elsevier Science B.V.
Resumo:
The preparation and characterization of three different plastic thin-film colorimetric sensors for gaseous ammonia is described. In the film sensors, the neutral form of a pH-sensitive dye (Bromophenol Blue, Bromocresol Green or Chlorophenol Red) was encapsulated in a plastic medium, either poly(vinyl butyral) or ethylcellulose plasticized with tributyl phosphate. Each of these film optodes gave a reproducible and reversible response towards gaseous ammonia. The sensitivity of the film sensors towards ammonia was found to be strongly dependent upon the pK(a) of the encapsulated dye. Thus, the film with Chlorophenol Red (pK(a) = 6.25), proved to be very insensitive (operating range: 0.29%
Resumo:
Bilayered Pb(Zr((1-x)),Ti(x))O(3) ferroelectric thin film heterostructures show complex ferroelastic nanodomain patterns. These ferroelastic nanodomains exist only in the upper layer, and hence are able to move under the application of an external electric field. Quantitative analysis reveals an enhanced piezoelectric coefficient of similar to 220 pm V(-1), rendering them attractive for a variety of electromechanical devices.