Low Insertion Loss Substrate Integrated Waveguide Quasi–Elliptic Filters for V- Band Wireless Personal Area Network Applications

Novel V-band substrate integrated waveguide (SIW) filters have been presented. Design procedures for the filters synthesis and mechanisms providing quasi-elliptic response have been explained. The insertion loss of the filters has been measured below 2 dB with microstrip-to-SIW transitions being included.

Solving the problem of diffraction of an optical-band electromagnetic wave by metal nanostructured aperture arrays with the use of the method of impedance boundary conditions

The problem of diffraction of an optical wave by a 2D periodic metal aperture array with square, circular, and ring apertures is solved with allowance for the finite permittivity of a metal in the optical band. The correctness of the obtained results is verified through comparison with experimental data. It is shown that the transmission coefficient can be substantially greater than the corresponding value reached in the case of diffraction by a grating in a perfectly conducting screen.

Two-colour pulsed Raman studies of the lowest excited singlet state of tetraphenylporphyrin: band assignments and electronic structure

The resonance Raman spectra of the lowest lying singlet (S-1) state of free-base tetraphenylporphyrin and seven of its isotopomers were recorded under pump-and-probe conditions with a time delay of -2 ns between pump and probe laser pulses, In the S-1 spectra of the isotopomers, as in the ground state, there are dramatic splittings of what appear to be single bands in the natural isotopic abundance spectrum. The most structurally significant bands of the S-1 state were assigned on the basis of the isotope data, In some cases it was necessary to curve fit unresolved bands in the excited-state spectra in order to account for observed intensity ratios and to rationalize isotope shifts, The changes in band positions on excitation to the S-1 state were compared with those from earlier studies on the T-1 state. The changes in band positions were found to be similar For both excited states. Most notable was the similar shift in nu(2), the most widely used marker band for orbital character. The data are interpreted as implying that the lowest lying singlet state is a configuration interaction admixture of b(1u)b(2g) + a(u)b(3g) configurations with the coefficients weighted heavily in favour of b(1n)b(2g), which Is the configuration of the T-1 state. Copyright (C) 2000 John Wiley & Sons, Ltd.

Web crippling behaviour of cold-formed steel channel sections with offset web holes subjected to interior-two-flange loading

Cold-formed steel sections are often used as wall studs or floor joists; such sections often include web holes for ease of installation of the services. Cold-formed steel design codes, however, do not consider the effect of such web holes. In this paper, a combination of experimental tests and non-linear elasto-plastic finite element analyses are used to investigate the effect of such holes on web crippling under interior-two-flange (ITF) loading conditions; the cases of both flange fastened and flange unfastened are considered. A good agreement between the experimental tests and finite element analyses was obtained. The finite element model was then used for the purposes of a parametric study on the effect of different sizes and position of holes in the web. It was demonstrated that the main factors influencing the web crippling strength are the ratio of the hole depth to the depth of the web, and the ratio of the distance from the edge of the bearing to the flat depth of web. Design recommendations in the form of web crippling strength reduction factors are proposed, that are conservative to both the experimental and finite element results.

Waveguide-to-microstrip transition at G-band using elevated E-plane probe

A rectangular waveguide-to-microstrip transition operating at G-band is presented. The E-plane probe, used in the transition, is fabricated on semi-insulating gallium arsenide (SI-GaAs) and it is elevated on the substrate. This configuration reduces interaction with semiconductor material. The elevated probe is suitable for direct integration with monolithic microwave integrated circuits. Measured results show S11 better than 210dB between 150 and 200 GHz and S21 ¼ 2 4dB at centre band (180GHz) for two transitions in back-to-back configuration.