143 resultados para Baire Topology


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An analysis of a modified series-L/parallel-tuned Class-E power amplifier is presented, which includes the effects that a shunt capacitance placed across the switching device will have on Class-E behaviour. In the original series L/parallel-tuned topology in which the output transistor capacitance is not inherently included in the circuit, zero-current switching (ZCS) and zero-current derivative switching (ZCDS) conditions should be applied to obtain optimum Class-E operation. On the other hand, when the output transistor capacitance is incorporated in the circuit, i.e. in the modified series-L/parallel-tuned topology, the ZCS and ZCDS would not give optimum operation and therefore zero-voltage-switching (ZVS) and zero-voltage-derivative switching (ZVDS) conditions should be applied instead. In the modified series-L/parallel-tuned Class-E configuration, the output-device inductance and the output-device output capacitance, both of which can significantly affect the amplifier's performance at microwave frequencies, furnish part, if not all, of the series inductance L and the shunt capacitance COUT, respectively. Further, when compared with the classic shunt-C/series-tuned topology, the proposed Class-E configuration offers some advantages in terms of 44% higher maximum operating frequency (fMAX) and 4% higher power-output capability (PMAX). As in the classic topology, the fMAX of the proposed amplifier circuit is reached when the output-device output capacitance furnishes all of the capacitance COUT, for a given combination of frequency, output power and DC supply voltage. It is also shown that numerical simulations agree well with theoretical predictions.

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This paper gives the first experimental characterisation of the phase noise response of the recently introduced Inverse Class E topology when operated as an amplifier and then as an oscillator. The results indicate that in amplifier and oscillator modes of operation conversion efficiencies of 64%, and 42% respectively are available, and that the excess PM noise added as a consequence of saturated Class E operation results in about a 10 dB increase in PM over that expected from a small-signal Class A amplifier operating at much lower efficiency. Inverse Class E phase transfer dependence on device drain bias and flicker noise are presented in order to show, respectively, that the Inverse Class E amplifier and oscillator follow the trends predicted by conventional phase noise theory. © 2007 EuMA.

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In this paper we present an adaptation to the classical I/Q modulator topology which simultaneously allows it to operate both as a multi-modulation standard modulator, and as a high efficiency balanced amplifier. This is made possible by concurrently exploiting the ability of the Class E amplifiers to produce variable output power at maximum power added efficiency, PAE, by simple dc bias control while faithfully reproducing phase encoded signals. Experimental evidence for the behaviour of the modulator when operated in QPSK mode at 2.33 GHz with a 1 Msymbol/s rate shows that Error Vector Magnitude of less than 5% with amplifier PAE of 65% is possible. The multimode modulator presented here should lead to significantly reduced complexity, enhanced functionality transceivers for use in dc power sensitive handheld wireless applications. © 2007 EuMA.

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In this brief, we propose a new Class-E frequency multiplier based on the recently introduced Series-L/Parallel-Tuned Class-E amplifier. The proposed circuit produces even-order output harmonics. Unlike previously reported solutions the proposed circuit can operate under 50% duty ratio which minimizes the conduction losses. The circuit also offers the possibility for increased maximum operating frequency, reduced peak switch voltage, higher load resistance and inherent bond wire absorption; all potentially useful in monolithic microwave integrated circuit implementations. In addition, the circuit topology suggested large transistors with high output capacitances can be deployed. Theoretical design equations are given and the predictions made using these are shown to agree with harmonic balance circuit simulation results.

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The impact that the transmission-line load-network has on the performance of the recently introduced series-L/parallel-tuned Class-E amplifier and the classic shunt-C/series-tuned configuration when compared to optimally derived lumped load networks is discussed. In addition an improved load topology which facilitates harmonic suppression of up to 5 order as required for maximum Class-E efficiency as well as load resistance transformation and a design procedure involving the use of Kuroda's identity and Richard's transformation enable a distributed synthesis process which dispenses with the need for iterative tuning as previously required in order to achieve optimum Class-E operation. © 2005 IEEE.

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Periodic loading of 1-D metallodielectric electromagnetic bandgap (MEBG) structures has been rigorously investigated. Miniaturised and broadband MEBG structures have been produced by means of periodically loading a dipole array. A study has been carried out with regard to the loading mechanism, the number of stubs, the topology of the structure and the order of loading. Simulations have been carried out using a method of moments based software. First order uniform loading stubs have yielded a significant size reduction of the MEBG array and the bandwidth has doubled. Good agreement between simulations and measurements has been achieved. The current distribution on the proposed structure has been studied, yielding valuable insight. An interdigital topology has resulted in further miniaturisation and bandwidth enhancement. Fractal-type arrays have been produced after applying second order loading. A maximum miniaturisation of 2.5:1 has been achieved.

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In this article, we present the theory and a design methodology for a unable Quasi-Lumped Quadrature Coupler (QLQC). Because of its topology, the coupler is simply reconfigured by switching the bias of two varactor diodes via a very simple DC bias circuitry. No additional capacitors or inductors are required. A prototype at 3.5 GHz is etched on a 0.130-mm-thick layer substrate with a dielectric material of relative permittivity of 2.22. The simulated and measured scattering parameters are, presented. (c) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2219-2222 2009: Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24526

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In this communication we present a novel polarization-agile microstrip antenna design. To dynamically change the polarization state, the radiating patch is fed by a tunable quasi-lumped coupler. The whole structure can be dynamically altered to radiate electromagnetic waves with vertical linear, horizontal linear, right-handed circular or left-handed circular polarization simply by changing the operating mode of the quasi-lumped coupler. Due to its topology the coupler is simply reconfigured by switching the bias of two varactor diodes via a very simple DC bias circuitry: no additional capacitors or inductors are required. A prototype is fabricated with a 0.762-mm-thick upper layer substrate for the radiating element and a 0.130-mm-thick layer substrate for the coupler circuit, both with the same dielectric material relative permittivity of 2.22. The simulated and measured scattering parameters, the axial ratio in circular radiation-mode and the cross-polarization level in linear mode, the gain and the radiation patterns are presented. The agile polarization capabilities of this new antenna, as demonstrated in this communication, underscore its suitability for modern wireless communications in a multi-path propagation environment.

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A power combining strategy for Class-E and inverse Class-E amplifiers operating at high frequencies such that they can operate into unbalanced loads is proposed. This power combining method is particularly important for the inverse Class-E amplifier configuration whose single-stage topology is naturally limited for small-to-medium power applications. Design examples for the power combining synthesis of classical Class-E and then inverse Class-E amplifiers with specification 3 V-1.5 W-2.5 GHz are given. For this specification, it is shown that a three-branch combiner has a natural 50 V output impedance. The resulting circuits are simulated within Agilent Advanced Design Systems environment with good agreement to theoretical prediction. Further the performance of the proposed circuits when operated in a Linear amplification using Nonlinear Components transmitter configuration whereby two-branch amplifiers are driven with constant amplitude conjugate input phase signals is investigated.

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An analysis of the operation of a series-L/parallel-tuned class-E amplifier and its equivalence to the classic shunt-C/series-tuned class-E amplifier are presented. The first reported closed form design equations for the series-L/parallel-tuned topology operating under ideal switching conditions are given. Furthermore, a design procedure is introduced that allows the effect that nonzero switch resistance has on amplifier performance efficiency to be accounted for. The technique developed allows optimal circuit components to be found for a given device series resistance. For a relatively high value of switching device ON series resistance of 4O, drain efficiency of around 66% for the series-L/parallel-tuned topology, and 73% for the shunt-C/series-tuned topology appear to be the theoretical limits. At lower switching device series resistance levels, the efficiency performance of each type are similar, but the series-L/parallel-tuned topology offers some advantages in terms of its potential for MMIC realisation. Theoretical analysis is confirmed by numerical simulation for a 500mW (27dBm), 10% bandwidth, 5 V series-L/parallel-tuned, then, shunt-C/series-tuned class E power amplifier, operating at 2.5 GHz, and excellent agreement between theory and simulation results is achieved. The theoretical work presented in the paper should facilitate the design of high-efficiency switched amplifiers at frequencies commensurate with the needs of modern mobile wireless applications in the microwave frequency range, where intrinsically low-output-capacitance MMIC switching devices such as pHEMTs are to be used.

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We study two-dimensional Banach spaces with polynomial numerical indices equal to zero.

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This paper proposes a new hierarchical learning structure, namely the holistic triple learning (HTL), for extending the binary support vector machine (SVM) to multi-classification problems. For an N-class problem, a HTL constructs a decision tree up to a depth of A leaf node of the decision tree is allowed to be placed with a holistic triple learning unit whose generalisation abilities are assessed and approved. Meanwhile, the remaining nodes in the decision tree each accommodate a standard binary SVM classifier. The holistic triple classifier is a regression model trained on three classes, whose training algorithm is originated from a recently proposed implementation technique, namely the least-squares support vector machine (LS-SVM). A major novelty with the holistic triple classifier is the reduced number of support vectors in the solution. For the resultant HTL-SVM, an upper bound of the generalisation error can be obtained. The time complexity of training the HTL-SVM is analysed, and is shown to be comparable to that of training the one-versus-one (1-vs.-1) SVM, particularly on small-scale datasets. Empirical studies show that the proposed HTL-SVM achieves competitive classification accuracy with a reduced number of support vectors compared to the popular 1-vs-1 alternative.

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