Branching ratios of x-ray photons from dielectronic recombination processes in H-like titanium ions

In dielectronic recombination of hydrogenlike ions an intermediate doubly excited heliumlike ion is formed. Since the K shell is empty, both excited electrons can decay sequentially to the ground state. In this paper we analyze the x-ray radiation emitted from doubly and singly excited heliumlike titanium ions produced inside the Tokyo electron beam ion trap. Theoretical population densities of the singly excited states after the first transition and the transition probabilities of these states into the ground state were also calculated. This allowed theoretical branching ratios to be determined for each manifold. These branching ratios are compared to the experimentally obtained x-ray distribution by fitting across the relevant peak using a convolution of the theoretically obtained resonance strengths and energies. By taking into account 2E1 transitions which are not observed in the experiment, the measured and calculated ratios agree well. This method provides a valuable insight into the transition dynamics of excited highly charged ions.

Atomic oxygen formation in a radio-frequency driven micro-atmospheric pressure plasma jet

Atomic oxygen formation in a radio-frequency driven micro-atmospheric pressure plasma jet is investigated using both advanced optical diagnostics and numerical simulations of the dynamic plasma chemistry. Laser spectroscopic measurements of absolute densities of ground state atomic oxygen reveal steep gradients at the interface between the plasma core and the effluent region. Spatial profiles resolving the interelectrode gap within the core plasma indicate that volume processes dominate over surface reactions. Details of the production and destruction processes are investigated in numerical simulations benchmarked by phase-resolved optical emission spectroscopy. The main production mechanisms are electron induced and hence most efficient in the vicinity of the plasma boundary sheath, where electrons are energized. The destruction is driven through chemical heavy particle reactions. The resulting spatial profile of atomic oxygen is relatively flat. The power dependence of the atomic oxygen density obtained by the numerical simulation is in very good agreement with the laser spectroscopic measurements.

Atomic ordering in nano-layered FePt

Monte Carlo simulation of chemical ordering kinetics in nano-layered L1₀ AB binary intermetallics was performed. The study addressed FePt thin layers considered as a material for ultra-high-density magnetic storage media and revealed metastability of the L1₀ c-variant superstructure with monoatomic planes parallel to the surface and off-plane easy magnetization. The layers, originally perfectly ordered in a c-variant of the L1₀ superstructure, showed homogeneous disordering running in parallel with a spontaneous re-orientation of the monoatomic planes leading to a mosaic microstructure composed of a- and b-L1₀-variant domains. The domains nucleated heterogeneously on the surface of the layer and grew discontinuously inwards its volume. Finally, the domains relaxed towards an equilibrium microstructure of the system. Two “atomistic-scale” processes: (i) homogeneous disordering and (ii) nucleation of the a- and b-L1₀-variant domains showed characteristic time scales. The same was observed for the domain microstructure relaxation. The discontinuous domain growth showed no definite driving force and proceeded due to thermal fluctuations. The above complex structural evolution has recently been observed experimentally in epitaxially deposited thin films of FePt.

R-matrix Floquet theory of multiphoton processes:XIII. Resonances in H multiphoton detachment

The results of calculations investigating the effects of autodetaching resonances on the multiphoton detachment spectra of H are presented. The R-matrix Floquet method is used, in which the coupling of the ion with the laser field is described non-perturbatively. The laser field is fixed at an intensity of 10 W cm, while frequency ranges are chosen such that the lowest autodetaching states of the ion are excited through a two- or three-photon transition from the ground state. Detachment rates are compared, where possible, to previous results obtained using perturbation theory. An illustration of how non-lowest-order processes, involving autodetaching states, can lead to light-induced continuum structures is also presented. Finally, it is demonstrated that by using a frequency connecting the 1s and 2s states, the probability of exciting the residual hydrogen atom is significantly enhanced.

R-matrix Floquet theory of multiphoton processes:VI. The negative halide ions

The R-matrix Floquet approach is applied to study the negative F and Cl ions in a light field. Detachment rates are obtained for detachment processes involving up to three photons. The results obtained in the present approach are compared to other experimental and theoretical results. For two- and three-photon processes reasonable agreement with other calculations has been found, while for two-photon detachment the results agree with the experimental cross sections. The three-photon results are in less good agreement with experiment although the larger error bars make accurate comparisons more difficult. The changes in the detachment behaviour for these ions are compared to each other as well as to the detachment behaviour of H.

R-matrix-Floquet theory of multiphoton processes:VIII. A linear equations method

A new linear equations method for calculating the R-matrix, which arises in the R-matrix-Floquet theory of multiphoton processes, is introduced. This method replaces the diagonalization of the Floquet Hamiltonian matrix by the solution of a set of linear simultaneous equations which are solved, in the present work, by the conjugate gradient method. This approach uses considerably less computer memory and can be readily ported onto parallel computers. It will thus enable much larger problems of current interest to be treated. This new method is tested by applying it to three-photon ionization of helium at frequencies where double resonances with a bound state and autoionizing states are important. Finally, an alternative linear equations method, which avoids the explicit calculation of the R-matrix by incorporating the boundary conditions directly, is described in an appendix.

Singly, doubly and triply resonant multiphoton processes involving autoionizing states in magnesium

Using the R-matrix Floquet theory we have carried out non-perturbative, ab initio one- and two-colour calculations of the multiphoton ionization of magnesium with the laser frequencies chosen such that the initial state of the atom is resonantly coupled with autoionizing resonances of the atom. Good agreement is obtained with previous calculations in the low-intensity regimes. The single-photon ionization from the 3s3p P excited state of magnesium has been studied in the vicinity of the 3p S autoionizing resonance at non-perturbative laser intensities. Laser-induced degenerate states (LIDS) are observed for modest laser intensities. By adding a second laser which resonantly couples the 3p S = and 3p3d P autoionizing levels, we show that, due to the small width of the 3p3d P state, LIDS occur between this state and the 3s3p P state at intensities of the first laser below 10 W cm . We next investigate the case in which the first laser induces a resonant two-photon coupling between the ground state and the 3p S autoionizing state, while the second laser again resonantly couples the respective 3p S and 3p3d P autoionizing states. At weak intensities, our calculations compare favourably with recent experimental data and calculations. We show that when the intensity of the first laser is increased, the effect of an additional autoionizing state, the 4s5s S state, becomes significant. This state is coupled to the 3p3d P autoionizing level by one photon, inducing a triply resonant processes. We show that LIDS occur among the three autoionizing levels and we discuss their effect on the decay rate of the ground state. We consider dressed two- and three-level atoms which can be used to model the results of our calculations.

Theoretical Investigation of NH3-SCR Processes over Zeolites: A Review

The selective catalytic reduction (SCR) of NOx compounds with NH3 is a hot topic in recent years. Among various catalysts, zeolites are proved to be efficient and promising for NH3-SCR, yet the whole processes and intrinsic mechanism are still not well understood due to the structural complexity of zeolites. With the improvement of theoretical chemistry techniques, quantum-chemical calculations are now capable of modeling the structure, acidity, adsorption, and ultimately reaction pathways over zeolites to some extent. In this review, a brief summary of relevant concepts of NH3-SCR is presented. Cluster approaches, embedded techniques, and periodic treatments are described as three main methods. Details of quantum-chemical investigations toward the key issues such as, the structure of active sites, the adsorption of small molecules, and the reaction mechanism of NH3-SCR over zeolites are discussed. Finally, a perspective for future theoretical research is given. 

Molecular dynamics simulation (MDS) to study nanoscale machining processes

Molecular Dynamics Simulations (MDS) are constantly being used to make important contributions to our fundamental understanding of material behaviour, at the atomic scale, for a variety of thermodynamic processes. This chapter shows that molecular dynamics simulation is a robust numerical analysis tool in addressing a range of complex nanofinishing (machining) problems that are otherwise difficult or impossible to understand using other methods. For example the mechanism of nanometric cutting of silicon carbide is influenced by a number of variables such as machine tool performance, machining conditions, material properties, and cutting tool performance (material microstructure and physical geometry of the contact) and all these variables cannot be monitored online through experimental examination. However, these could suitably be studied using an advanced simulation based approach such as MDS. This chapter details how MD simulation can be used as a research and commercial tool to understand key issues of ultra precision manufacturing research problems and a specific case was addressed by studying diamond machining of silicon carbide. While this is appreciable, there are a lot of challenges and opportunities in this fertile area. For example, the world of MD simulations is dependent on present day computers and the accuracy and reliability of potential energy functions [109]. This presents a limitation: Real-world scale simulation models are yet to be developed. The simulated length and timescales are far shorter than the experimental ones which couples further with the fact that contact loading simulations are typically done in the speed range of a few hundreds of m/sec against the experimental speed of typically about 1 m/sec [17]. Consequently, MD simulations suffer from the spurious effects of high cutting speeds and the accuracy of the simulation results has yet to be fully explored. The development of user-friendly software could help facilitate molecular dynamics as an integral part of computer-aided design and manufacturing to tackle a range of machining problems from all perspectives, including materials science (phase of the material formed due to the sub-surface deformation layer), electronics and optics (properties of the finished machined surface due to the metallurgical transformation in comparison to the bulk material), and mechanical engineering (extent of residual stresses in the machined component) [110]. Overall, this chapter provided key information concerning diamond machining of SiC which is classed as hard, brittle material. From the analysis presented in the earlier sections, MD simulation has helped in understanding the effects of crystal anisotropy in nanometric cutting of 3C-SiC by revealing the atomic-level deformation mechanisms for different crystal orientations and cutting directions. In addition to this, the MD simulation revealed that the material removal mechanism on the (111) surface of 3C-SiC (akin to diamond) is dominated by cleavage. These understandings led to the development of a new approach named the “surface defect machining” method which has the potential to be more effective to implement than ductile mode micro laser assisted machining or conventional nanometric cutting.

Non-thermal processes in coronae and beyond

This contribution summarizes the splinter session ``Non-thermal processes in coronae and beyond'' held at the Cool Stars 17 workshop in Barcelona in 2012. It covers new developments in high energy non-thermal effects in the Earth's exosphere, solar and stellar flares, the diffuse emission in star forming regions and reviews the state and the challenges of the underlying atomic databases.

Electron-impact ionization and recombination of M -shell atomic ions in the argon isonuclear sequence

Electron-impact ionization and recombination cross sections and rate coefficients are calculated for M-shell Ar atomic ions using a configuration-average distorted-wave method. The electron-impact ionization calcula- tions are for all atomic ions in the Ar isonuclear sequence. Ionization contributions include both direct ioniza- tion and excitation-autoionization processes. Good agreement is found between theory and experimental crossed-beam measurements for moderately charged ion stages. Comparisons are made with previous theoret- ical calculations where possible.We also generate rate coefficients for neutral argon ionization, based on recent R-matrix with pseudostates calculations. Electron-impact dielectronic recombination is calculated for all M-shell ions of argon. For Ar6+ and Ar7+ the current theoretical results agree well with previous level-resolved distorted-wave calculations. In order to compare with published ionization balance results our dielectronic recombination data are combined with literature values for the higher ion stages and with recent radiative recombination data for all the ion stages. We find significant differences in our equilibrium fractional abun- dances for the M-shell ions, compared with literature values. We relate these differences to the underlying atomic data.

Reactions of atomic and molecular ions with acetone, 1,1,1- trifluoroacetone, and hexafluoroacetone: An investigation of the effects of molecular structure on the dynamics and kinetics of ion-molecule reactions

A selected ion flow tube study of the reactions of a series of gas-phase atomic cations (S⁺, Xe⁺, O⁺, Kr⁺, N⁺, Ar⁺ and Ne⁺) and molecular ions (SF _n⁺ (n = 1-5), CF_n⁺ (n = 1-3), CF₂Cl⁺, H₃O⁺, NO⁺, N ₂O⁺, CO₂⁺, CO⁺, and N₂⁺) spanning a large range of recombination energies (6.3-21.6 eV), with acetone, 1,1,1-trifluoroacetone, and hexafluoroacetone has been undertaken with the objective of exploring the nature of the reaction ion chemistry as the methyl groups in acetone are substituted for CF₃. The reaction rate coefficients and product ion branching ratios for all 66 reactions, measured at 298 K, are reported. The experimental reaction rate coefficients are compared to theoretically calculated collisional values. Several distinct reaction processes were observed among the large number of reactions studied, including charge transfer (non-dissociative and dissociative), abstraction, ion-molecule associations and, in the case of the reactions involving the reagent ion H₃O⁺, proton transfer. 

Direct observation of a long-lived single-atom catalyst chiseling atomic structures in graphene

Fabricating stable functional devices at the atomic scale is an ultimate goal of nanotechnology. In biological processes, such high-precision operations are accomplished by enzymes. A counterpart molecular catalyst that binds to a solid-state substrate would be highly desirable. Here, we report the direct observation of single Si adatoms catalyzing the dissociation of carbon atoms from graphene in an aberration-corrected high-resolution transmission electron microscope (HRTEM). The single Si atom provides a catalytic wedge for energetic electrons to chisel off the graphene lattice, atom by atom, while the Si atom itself is not consumed. The products of the chiseling process are atomic-scale features including graphene pores and clean edges. Our experimental observations and first-principles calculations demonstrated the dynamics, stability, and selectivity of such a single-atom chisel, which opens up the possibility of fabricating certain stable molecular devices by precise modification of materials at the atomic scale.