Contrasting damage characteristics in direct incidence and surface plasmon mediated single-shot laser ablation of aluminium films

Thin, oxidised Al films grown an one face of fused silica prisms are exposed. tinder ambient conditions, to single shots from an excimer laser operating at wavelength 248 nm. Preliminary characterisation of the films using attenuated total reflection yields optical and thickness data for the Al and Al oxide layers; this step facilitates the subsequent, accurate tuning of the excimer laser pulse to the: surface plasmon resonance at the Al/(oxide)/air interface and the calculation of the fluence actually absorbed by the thin film system. Ablation damage is characterised using scanning electron, and atomic force microscopy. When the laser pulse is incident, through the prism on the sample at less than critical angle, the damage features are molten in nature with small islands of sub-micrometer dimension much in evidence, a mechanism of film melt-through and subsegment blow-off due to the build up of vapour pressure at the substrate/film interface is appropriate. By contrast, when the optical input is surface plasmon mediated, predominately mechanical damage results with the film fragmenting into large flakes of dimensions on the order of 10 mu m. It is suggested that the ability of surface plasmons to transport energy leads to enhanced, preferential absorption of energy at defect sites causing stress throughout the film which exceeds the ultimate tensile stress for the film: this in turn leads to film break-up before melting can onset. (C) 1998 Elsevier Science B.V.

Insight of the interface of electroless Ni-P/SiC composite coating on aluminium alloy, LM24

Electroless nickel composite coatings with silicon carbide, SiC, as reinforcing particles deposited with Ni–P onto aluminium alloy, LM24, having zincating as under layer were subjected to heat treatment using air furnace. The changes at the interface were investigated using scanning electron microscope (SEM) and energy dispersive X-ray (EDX) to probe the chemistry changes upon heat treatment. Microhardness tester with various loads using both Knoop and Vickers indenters was used to study the load effect clubbed with the influence of second phase particles on the coating at the vicinity of the interface. It was observed that zinc was absent at the interface after elevated temperature heat treatment at 400–500 °C. Precipitation of copper and nickel with a distinct demarcation (copper rich belt) along the coating interface was seen with irregular thickness of the order of 1 μm. Migration of copper from the bulk aluminium alloy could have been the factor. Brittleness of the coating was confirmed on heat treatment when indented with Vickers. However, in composite coating the propagation of the microcrack was stopped by the embedded particles but the microcracks continue in the matrix when not interrupted by second phase particles (SiC).

Phase composition, microstructure and microhardness of electroless nickel composite coating co-deposited with SiC on cast aluminium LM24 alloy substrate

Electroless Ni–P (EN) and composite Ni–P–SiC (ENC) coatings were developed on cast aluminium alloy substrate, LM24. The coating phase composition, microstructure and microhardness were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and microhardness tester, respectively, on as-plated and heat-treated specimens. The original microstructure of the Ni–P matrix is not affected by the inclusion of the hard particles SiC. No formation of Ni–Si phase was observed up to 500 °C of heat treatment. The microhardness is increased on incorporation of SiC in Ni–P matrix. The hardening mechanism is the formation of intermetallic phase Ni3P on annealing at elevated temperature.

Characterisation of phase composition, microstructure and microhardness of electroless nickel composite coating co-deposited with SiC on casting aluminium LM24 alloy substrate

Electroless Ni-P (EN) and composite Ni-P-SiC (ENC) coatings were developed on cast aluminium alloy, LM24. The coating phase composition, microstructure and microhardness were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and microhardness tester, respectively, on as-plated and heat-treated specimens. The original microstructure of the Ni-P matrix is not affected by the inclusion of the hard particles SiC. No formation of Ni-Si phase was observed upto 500°C of heat treatment. The microhardness is increased on incorporation of SiC in Ni-P matrix. The hardening mechanism is the formation of intermetallic phase Ni3P on annealing at elevated temperature. Overall, the composite coating (ENC) was found to be superior as compared to particles free (EN) coating in both as-deposited and heat-treated conditions.

Micro-scale abrasion behaviour of electroless Ni-P-SiC coating on aluminium alloy

Electroless nickel (EN) and electroless nickel composite (ENC) coatings were deposited on aluminium alloy substrate, LM24. The micro abrasion test was conducted to study the wear behaviour of the coatings with the effect of SiC concentration. Microhardness of the coatings was tested also. The wear scars were analysed using optical microscope and scanning electron microscope (SEM). The wear resistance was found to be improved in composite coating that has higher microhardness as compared to particles free and the bare aluminium substrate. In as-deposited condition for the composite coating, the wear volume increases on increase in SiC percentage in the coating but is found to be minimum for lower SiC percentage. The increase in hardness on heat treatment at 400°C is due to the hardening or grain coarsening with the formation Ni3P.

Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al2O3 interfacial layer (∼2.8 nm). For diodes with an Al2O3 interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO2 interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm.