The GAL genetic switch: visualisation of the interacting proteins by split-EGFP bimolecular fluorescence complementation

A split-EGFP bimolecular fluorescence complementation assay was used to visualise and locate three interacting pairs of proteins from the GAL genetic switch of the budding yeast, Saccharomyces cerevisiae. Both the Gal4p-Gal80p and Gal80p-Gal3p pairs were found to be located in the nucleus under inducing conditions. However, the Gal80p-Gal1p complex was located throughout the cell. These results support recent work establishing an initial interaction between Gal3p and Gal80p occurring in the nucleus. Labelling of all three protein pairs impaired the growth of the yeast strains and resulted in reduced galactokinase activity in cell extracts. The most likely cause of this impairment is decreased dissociation rates of the complexes, caused by the essentially irreversible reassembly of the EGFP fragments. This suggests that a fully functional GAL genetic switch requires dynamic interactions between the protein components. These results also highlight the need for caution in the interpretation of in vivo split-EGFP experiments.

Ultrafast Low-Loss 40-70 GHz SPST Switch

The design and characterizations of an ultrafast single-pole single-throw (SPST) absorptive differential switch are presented. The switch exhibits low insertion loss less than 1 dB, and isolation better than 16 dB from 40 to 70 GHz. Sub-nanosecond switching time is achieved by adopting a differential current-steering technique. The total measured rise and fall time are 75 ps envisaging that switching rates up to 13 Gb/s are achievable. To our best knowledge, this is the fastest, lowest insertion loss V-band SPST switch yet reported that can operate over a wide bandwidth of 30 GHz.

The plasma mirror - A subpicosecond optical switch for ultrahigh power lasers

Plasma mirrors are devices capable of switching very high laser powers on subpicosecond time scales with a dynamic range of 20–30 dB. A detailed study of their performance in the near-field of the laser beam is presented, a setup relevant to improving the pulse contrast of modern ultrahigh power lasers ~TW–PW!. The conditions under which high reflectivity can be achieved and focusability of the reflected beam retained are identified. At higher intensities a region of high specular reflectivity with rapidly decreasing focusability was observed, suggesting that specular reflectivity alone is not an adequate guide to the ideal range of plasma mirror operation. It was found that to achieve high reflectivity with negligible phasefront distortion of the reflected beam the inequality csDt,lLaser must be met (cs : sound speed, Dt: time from plasma formation to the peak of the pulse!. The achievable contrast enhancement is given by the ratio of plasma mirror reflectivity to cold reflectivity.

Ultrafast low-loss 42-70 GHz differential SPDT switch in 0.35 μm SiGe technology

This paper presents an ultrafast wideband low-loss single-pole double-throw (SPDT) differential switch in 0.35 µ m SiGe bipolar technology. The proposed topology adopting current-steering technique results in a total measured switching time of 75 ps , which suggests a maximum switching rate of 13 Gb/s, the fastest ever reported at V-band. In addition, the switch exhibits an insertion loss lower than 1.25 dB and an isolation higher than 18 dB from 42 GHz to 70 GHz. © 2006 IEEE.

Power Allocation Strategies across N Orthogonal Channels at Both Source and Relay

A wireless relay network with one source, one relay and one destination is considered, where nodes communicate via N orthogonal channels. We develop optimal power allocation strategies at both the source and relay for maximizing the overall source-destination capacity under individual power constraints at the source and relay. Some properties of the optimal solution are studied. © 2012 IEEE.