2.4 GHz high-efficiency power-combining Class-E amplifier with transmission-line harmonic traps

Experimental assessments of the modified power-combining Class-E amplifier are described. The technique used to combine the output of individual power amplifiers (PAs) into an unbalanced load without the need for bulky transformers permits the use of small RF chokes useful for the deployment in the EER transmitter. The modified output load network of the PA results in excellent 50 dBc and 46 dBc second and third-harmonic suppressions, dispensing the need for additional lossy filtering block. Operating from a 3.2 V dc supply voltage, the PA exhibits 64% drain efficiency at 24 dBm output power. Over a wide bandwidth of 350 MHz, drain efficiency of better than 60% at output power higher than 22 dBm were achieved. © 2010 IEICE Institute of Electronics Informati.

Design technique for mm-wave IC realization of the load network of switched-mode class-EF power amplifier

Analysis and synthesis of the new Class-EF power amplifier (PA) are presented in this paper. The proposed circuit offers means to alleviate some of the major issues faced by existing Class-EF and Class-EF PAs, such as (1) substantial power losses due to parasitic resistance of the large inductor in the Class-EF load network, (2) unpredictable behaviour of practical lumped inductors and capacitors at harmonic frequencies, and (3) deviation from ideal Class-EF operation mode due to detrimental effects of device output inductance at high frequencies. The transmission-line load network of the Class-EF PA topology elaborated in this paper simultaneously satisfies the Class-EF optimum impedance requirements at fundamental frequency, second, and third harmonics as well as simultaneously providing matching to the circuit optimum load resistance for any prescribed system load resistance. Furthermore, an elegant solution using an open and short-circuit stub arrangement is suggested to overcome the problem encountered in the mm-wave IC realizations of the Class-EF PA load network due to lossy quarter-wave line. © 2010 IEICE Institute of Electronics Informati.

Power back-off behaviour of high-efficiency power-combining Class-E amplifier

Power back-off performances of the modified power-combining Class-E amplifier under different amplitudemodulation schemes such as envelope elimination and restoration (EER) and envelope tracking (ET) are experimentally assessed in this paper. The modified output load network adopting three-harmonic terminations technique eliminates the need for additional lossy filtering section in the transmitter chain. Small dc-feed inductances rather than massive RF chokes as in the classic Class-E amplifier are used so as to increase the modulation bandwidth and therefore improve the linearity of the EER transmitter. High efficiency over a wide dynamic range using amplitude modulation through drain-voltage control (EER) was achieved and this agrees well with the Class-E theoretical prediction. When the PA was used within the ET scheme, an increase of average drain efficiency of as high as 40% with respect to the CW excitation was obtained for a multi-carrier input signal with 12dB peak-to-average power ratio. © 2011 Institut fur Mikrowellen.

A 75-81 GHz, 14.3 dBm Peak Output Power, 21 dB Peak Gain, SiGe Power-Combining Amplifier Operating from a Single 3.3 V Supply

A compact differential 4-way power combiner with 2.3 dB loss and high common-mode rejection characteristic for use in mm-wave PAs is presented. A complete circuit comprised of a power splitter, two-stage cascode PA array, and a power combiner was implemented in SiGe technology. Measured small-signal gain of at least 17 dB was obtained from 74.5 GHz to 80.5 GHz with a peak 21 dB at 79 GHz. The prototype delivered 13.2 dBm P1dB and 14.3 dBm Psat when operated from a single 3.3 V supply at 75 GHz.

A SiGe Power Amplifier with Integrated BALUNs for 81-86 GHz E-Band Backhaul Applications

The design of a two-stage differential cascode power amplifier (PA) for 81-86 GHz E-band applications is presented. The PA was realised in SiGe technology with fT/fmax 170/250 GHz. A broadband transformer with efficiency higher than 79.4% from 71 GHz to 96 GHz is used as a BALUN. The PA delivers a 4.5 dBm saturated output power and exhibits a 13.4 dB gain at 83.6 GHz. The input and output return losses agree well with the design specifications.

Full duplex reflection amplifier tag

The authors describe a reflection amplifier adapted to have both a reflection and a transmission port. The amplifier uses a single silicon bipolar transistor and demonstrates a reflection gain of 13 dB, transmission gain of 10 dB and 3.4 dB noise figure at 5.25 GHz. The added feature of transmission gain in the reflection amplifier permits practical implementation of full duplex microwave radiofrequency indentification (RFID) tag operation. By using a simple subcarrier modulation scheme full duplex RFID operation utilising this amplifier is demonstrated. These results indicate that for 27 dBm (0.5 W) effective isotropic radiated power (EIRP) transmit power it should be possible to obtain approximately 8 m downlink range and 25 m uplink range

A 2.2 GHz High-Efficiency Third-Harmonic-Peaking Class-EF Power Amplifier

This paper presents the design and implementation of a low-voltage-stress Class-EF power amplifier (PA) with extended maximum operating frequency, named as ‘third-harmonic-peaking Class-EF PA’. A novel transmission-line load network is proposed to meet the Class-EF impedance requirements at the fundamental, all even harmonics, and third harmonic components. It also provides an impedance matching to a 50 Ω load. A more effective λ/8 open- and shorted-stub network is deployed at the drain of the transistor replacing the traditional λ/4 transmission line. Implemented using GaN HEMTs, the PA delivered 39.2 dBm output power with 80.5% drain efficiency and 71% PAE at 2.22 GHz.

E-Band Transformer-Based Differential 4-Way Power-Combining Amplifier

This paper presents the design and implementation of a differential 4-way power-combining amplifier operating at E-band. The proposed 4-way power combiner (4WPC) facilitates short interconnects to the PA cells, thereby resulting in reduced loss. Simple C-L-C and L-C networks are deployed in order to compensate inductive loading due to the routing lines that would otherwise introduce mismatch and subsequently increase overall loss. Realized in SiGe technology, the PA prototype delivered 13.2 dBm output-referred 1-dB compression point and 14.3 dBm saturated output power when operated from a single 3.3 V DC supply at 75 GHz.

Idealized Operation of Third-Harmonic-Peaking Class-Ef Power Amplifier with Extended Maximum Operating Frequency

A new variant of Class-EF power amplifier (PA), the so-called third-harmonic-peaking Class-EF, is presented. It inherits a soft-switching operation from the Class-E PA and a low peak switch voltage from the Class-F PA. More importantly, the new topology allows operations at higher frequencies and permits deployment of large transistors which is normally prohibited since they are always accompanied with high output capacitances. Using a simple transmission-line load network, the PA is synthesized to satisfy Class-EF impedances at fundamental frequency, third harmonic, and all even harmonics as well as to simultaneously provide an impedance matching to 50-Ω load.

Low Noise Amplifier With Integrated Balanced Antenna for 60 GHz Wireless Communications

The implementation of a dipole antenna co-designed and monolithically integrated with a low noise amplifier (LNA) on low resistivity Si substrate (20 Omega . cm) manufactured in 0.35 mu m commercial SiGe HBT process with f(T)/f(max) of 170 GHz and 250 GHz is investigated theoretically and experimentally. An air gap is introduced between the chip and a reflective ground plane, leading to substantial improvements in efficiency and gain. Moreover, conjugate matching conditions between the antenna and the LNA are exploited, enhancing power transfer between without any additional matching circuit. A prototype is fabricated and tested to validate the performance. The measured 10-dB gain of the standalone LNA is centered at 58 GHz with a die size of 0.7 mm x 0.6 mm including all pads. The simulated results showed antenna directivity of 5.1 dBi with efficiency higher than 70%. After optimization, the co-designed LNA-Antenna chip with a die size of 3 mm x 2.8 mm was characterized in anechoic chamber environment. A maximum gain of higher than 12 dB was obtained.

Analysis of the Second Harmonic Effect on Power Amplifier Intermodulation Products

A theoretical analysis is reported in this paper to investigate the effect that a second harmonic signal which might be present at an amplifier’s input has on generating additional intermodulation products, particularly the third-order intermodulation (IM3) products. The analysis shows that the amplitude of an extra generated IM3 component is equal to the product of the fundamental amplitude, the second harmonic amplitude, and the second order Taylor series coefficient. The effect of the second order harmonic on the IM3 is examined through a simulated example of a 2.22-GHz 10-W Class-EF amplifier whereby the IM3 levels have been reduced by 2-3 dB after employing a second harmonic termination stub at the input.

Towards generalized Doherty power amplifier design for multiband operation

This paper presents a new variant of broadband Doherty power amplifier that employs a novel output combiner. A new parameter ∝ is introduced to permit a generalized analysis of the recently reported Parallel Doherty power amplifier (PDPA),and hence offer design flexibility. The circuit prototype of the new DPA fabricated using GaN devices exhibits maximum drain efficiency of 85% at 43-dBm peak power and 63% at 6-dB backoff power (BOP). Measured drain efficiency of >60% at peak power across 500-MHz frequency range and >50% at 6-dB BOP across 480-MHz frequency range were achieved, confirming the  theoretical wideband characteristics of the new DPA.

Comprehensive numerical modelling of the performance of a second harmonic generation stage coupled with a low-gain optical parametric amplifier

We present a comprehensive model for predicting the full performance of a second harmonic generation-optical parametric amplification system that aims at enhancing the temporal contrast of laser pulses. The model simultaneously takes into account all the main parameters at play in the system such as the group velocity mismatch, the beam divergence, the spectral content, the pump depletion, and the length of the nonlinear crystals. We monitor the influence of the initial parameters of the input pulse and the interdependence of the two related non-linear processes on the performance of the system and show its optimum configuration. The influence of the initial beam divergence on the spectral and the temporal characteristics of the generated pulse is discussed. In addition, we show that using a crystal slightly longer than the optimum length and introducing small delay between the seed and the pump ensures maximum efficiency and compensates for the spectral shift in the optical parametric amplification stage in case of chirped input pulse. As an example, calculations for bandwidth transform limited and chirped pulses of sub-picosecond duration in beta barium borate crystal are presented.