An investigation of Mode I and Mode II fracture toughness enhancement using aligned carbon nanotubes forests at the crack interface

A novel approach for introducing aligned multi-walled carbon nanotubes (MWCNTs) in a carbon-fibre composite pre-impregnated (prepreg) laminate, to improve the through-thickness fracture toughness, is presented. Carbon nanotube (CNT) 'forests' were grown on a silicon substrate with a thermal oxide layer, using a chemical vapour deposition (CVD) process. The forests were then transferred to a pre-cured laminate interface, using a combination of pressure and heat, while maintaining through-thickness CNT alignment. Standard Mode I and four-point bend end-notched flexure Mode II tests were undertaken on a set of specimens and compared with pristine specimens. Mode I fracture toughness for T700/M21 laminates was improved by an average of 31% while for T700/SE84LV specimens, an improvement of 61% was observed. Only T700/M21 specimens were tested in Mode II which yielded an average fracture toughness improvement of 161%. Scanning Electron Microscopy (SEM) showed good wetting of the CNT forest as well as evidence of penetration of the forest into the adjacent plies. © 2013 Elsevier Ltd.

Nonlinear transport and localization in single-walled carbon nanotubes

We have measured the electrical transport properties of mats of single-walled carbon nanotubes (SWNT) as a function of applied electric and magnetic fields. We find that at low temperatures the resistance as a function of temperature R(T) follows the Mott variable range hopping (VRH) formula for hopping in three dimensions. Measurement of the electric field dependence of the resistance R(E) allows for the determination of the Bohr radius of a localized state a = 700nm. The magnetoresistance (MR) of SWNT mat samples is large and negative at all temperatures and fields studied. The low field negative MR is proportional to H2, in agreement with variable range hopping in two or three dimensions. 3D VRH indicates good intertube contacts, implying that the localization is due to the disorder experienced by the individual tubes. The 3D localization radius gives a measure of the ID localization length on the individual tubes, which we estimate to be >700 nm. Implications for the electron-phonon mean free path are discussed.