Long-Range Lateral Dopant Diffusion in Tungsten Silicide Layers

Novel diode test structures have been manufactured to characterize long-range dopant diffusion in tungsten silicide layers. A tungsten silicide to p-type silicon contact has been characterized as a Schottky barrier rectifying contact with a silicide work function of 4.8 eV. Long-range diffusion of boron for an anneal at 900 °C for 30 min has been shown to alter this contact to become ohmic. Long-range diffusion of phosphorus with a similar anneal alters the contact to become a bipolar n-p diode. Bipolar diode action is demonstrated experimentally for anneal schedules of 30 min at 900 °C, indicating long-range diffusion of phosphorus (~38 µm), SIMS analysis shows dopant redistribution is adversely affected by segregation to the silicide/oxide interface. The concept of conduit diffusion has been demonstrated experimentally for application in advanced bipolar transistor technology. © 2009 IEEE.

Effects of buried high-Z layers on fast electron propagation

By extending a prior model [A. R. Bell, J.R. Davies, S. M. Guerin, Phys. Rev. E 58, 2471 (1998)], the magnetic field generated during the transport of a fast electron beam driven by an ultraintense laser in a solid target is derived analytically and applied to estimate the effect of such field on fast electron propagation through a buried high-Z layer in a lower-Z target. It is found that the effect gets weaker with the increase of the depth of the buried layer, the divergence of the fast electrons, and the laser intensity, indicating that magnetic field effects on the fast electron divergence as measured from K-a X-ray emission may need to be considered for moderate laser intensities. On the basis of the calculations, some considerations are made on how one can mitigate the effect of the magnetic field generated at the interface.

Pulsed second harmonic generation by stacks of magnetically biased semiconductor layers

The pulsed second harmonic generation (SHG) by periodic stacks of nonlinear semiconductor layers with external magnetic bias has been studied in the self-consistent problem formulation, taking into account mobility of carriers. The products of nonlinear scattering in the three-wave mixing process are examined. It is demonstrated that the waveform evolution in magnetoactive weakly nonlinear semiconductor periodic structure illuminated by Gaussian pulse is strongly affected by the magnetic bias and collision frequency of the carriers. The effect of nonreciprocity on the SHG efficiency is discussed and illustrated by the examples. © 2013 European Microwave Association.

Tracking magnetic bright point motions through the solar atmosphere

High-cadence, multiwavelength observations and simulations are employed for the analysis of solar photospheric magnetic bright points (MBPs) in the quiet Sun. The observations were obtained with the Rapid Oscillations in the Solar Atmosphere (ROSA) imager and the Interferometric Bidimensional Spectrometer at the Dunn Solar Telescope. Our analysis reveals that photospheric MBPs have an average transverse velocity of approximately 1 km s-1, whereas their chromospheric counterparts have a slightly higher average velocity of 1.4 km s-1. Additionally, chromospheric MBPs were found to be around 63 per cent larger than the equivalent photospheric MBPs. These velocity values were compared with the output of numerical simulations generated using the muram code. The simulated results were similar, but slightly elevated, when compared to the observed data. An average velocity of 1.3 km s-1 was found in the simulated G-band images and an average of 1.8 km s-1 seen in the velocity domain at a height of 500 km above the continuum formation layer. Delays in the change of velocities were also analysed. Average delays of ˜4 s between layers of the simulated data set were established and values of ˜29 s observed between G-band and Ca ii K ROSA observations. The delays in the simulations are likely to be the result of oblique granular shock waves, whereas those found in the observations are possibly the result of a semi-rigid flux tube.

Influence of strain and polycrystalline ordering on magnetic properties of high moment rare earth metals and alloys

Despite being the most suitable candidates for solenoid pole pieces in state-of-the-art superconductor- based electromagnets, the intrinsic magnetic properties of heavy rare earth metals and their alloys have gained comparatively little attention. With the potential of integration in micro- and nanoscale devices, thin films of Gd, Dy, Tb, DyGd and DyTb were plasma-sputtered and investigated for their in-plane magnetic properties, with an emphasis on magnetisation vs. temperature profiles. Based on crystal structure analysis of the polycrystalline rare earth films, which consist of a low magnetic moment FCC layer at the seed interface topped with a higher moment HCP layer, an experimental protocol is introduced which allows the direct magnetic analysis of the individual layers. In line with the general trend of heavy lanthanides, the saturation magnetisation was found to drop with increasing unit cell size. In-situ annealed rare earth films exceeded the saturation magnetisation of a high-moment Fe65Co35 reference film in the cryogenic temperature regime, proving their potential for pole piece applications; however as-deposited rare earth films were found completely unsuitable. In agreement with theoretical predictions, sufficiently strained crystal phases of Tb and Dy did not exhibit an incommensurate magnetic order, unlike their single-crystal counterparts which have a helical phase. DyGd and DyTb alloys followed the trends of the elemental rare earth metals in terms of crystal structure and magnetic properties. Inter-rare-earth alloys hence present a desirable blend of saturation magnetisation and operating temperature.

Nonreciprocal scattering by stacked nonlinear magneto-active semiconductor layers

The combinatorial frequency generation by the periodic stacks of magnetically biased semiconductor layers has been modelled in a self-consistent problem formulation, taking into account the nonlinear dynamics of carriers. It is shown that magnetic bias not only renders nonreciprocity of the three-wave mixing process but also significantly enhances the nonlinear interactions in the stacks, especially at the frequencies close to the intrinsic magneto-plasma resonances of the constituent layers. The main mechanisms and properties of the combinatorial frequency generation and emission from the stacks are illustrated by the simulation results, and the effects of the individual layer parameters and the structure arrangement on the stack nonlinear and nonreciprocal response are discussed. © 2014 Elsevier B.V. All rights reserved.

Morphology dependence of the dielectric properties of epitaxial BaTiO3 films and epitaxial BaTiO3/SrTiO3 multilayers

Epitaxial BaTiO3 films and epitaxial BaTiO3/SrTiO3 multilayers were grown by pulsed laser deposition on vicinal surfaces of (001)-oriented Nb-doped SrTiO3 (SrTiO3:Nb) single-crystal substrates. Atomic force microscopy was used to investigate the surface topography of the deposited films. The morphology of the films, of the BaTiO3/SrTiO3 interfaces, and of the column boundaries was investigated by cross-sectional high-resolution transmission electron microscopy. Measurements of the dielectric properties were performed by comparing BaTiO3 films and BaTiO3/SrTiO3 multilayers of different numbers of individual layers, but equal overall thickness. The dielectric loss saturates for a thickness above 300 nm and linearly decreases with decreasing film thickness below a thickness of 75 nm. At the same thickness of 75 nm, the thickness dependence of the dielectric constant also exhibits a change in the linear slope both for BaTiO3 films and BaTiO3/SrTiO3 multilayers. This behaviour is explained by the change observed in the grain morphology at a thickness of 75 nm. For the thickness dependence of the dielectric constant, two phenomenological models are considered, viz. a 'series-capacitor' model and a 'dead-layer' model.

Formation of epitaxial BaTiO3/SrTiO3 multilayers grown on Nb-doped SrTiO3 (001) substrates

The formation of epitaxial BaTiO3/SrTiO3 multilayers; is studied in terms of the growth mechanism by investigating surface morphologies, crystalline orientations, microstructures, and structures of the interfaces, as well as by determining the dielectric properties. Under specific conditions, the epitaxial BaTiO3 films follow a layer-then-island (Stranski-Krastanov) mechanism on SrTiO3 (001)-oriented substrates. In view of actual efforts made to grow epitaxial superlattices involving very thin individual layers of BaTiO3 and/or SrTiO3, we have determined that the BaTiO3 films Of up to 6,nm thickness do not show any defects and have a sharp BaTiO3-on-SrTiO3 interface. On the contrary, SrTiO3-on-BaTiO3 interfaces within multilayers are rough, probably due to the different growth mechanisms of the two different materials, or due to a difference in the morphological stability of the growth surfaces caused by different surface energies of BaTiO3 and SrTiO3 and by different mobilities of the Ba and Sr atoms reaching the SrTi3 and BaTiO3 layers, respectively.

Ferroelectricity in epitaxial pulsed laser deposited bismuth-layered perovskite thin films of different crystallographic orientations

Epitaxial thin films Of various bismuth-layered perovskites SrBi(2)Ta(2)O(9), Bi(4)Ti(3)O(12), BaBi(4)Ti(4)O(15), and Ba(2)Bi(4)Ti(5)O(18) were deposited by pulsed laser deposition onto epitaxial conducting LaNiO(3) or SrRuO(3) electrodes on single crystalline SrTiO(3) substrates with different crystallographic orientations or on top of epitaxial buffer layers on (100) silicon. The conductive perovskite electrodes and the epitaxial ferroelectric films are strongly influenced by the nature of the substrate, and bismuth-layered perovskite ferroelectric films with mixed (100), (110)- and (001)-orientations as well as with uniform (001)-, (116)- and (103)- orientations have been obtained. Structure and morphology investigations performed by X-ray diffraction analysis, scanning probe microscopy, and transmission electron microscopy reveal the different epitaxial relationships between films and substrates. A clear correlation of the crystallographic orientation of the epitaxial films with their ferroelectric properties is illustrated by macroscopic and microscopic measurements of epitaxial bismuth-layered perovskite thin films of different crystallographic orientations.

Microstructure and dielectric properties of epitaxial BaTiO3 films and BaTiO3/SrTiO3 multilayers

Epitaxial BaTiO3 films and BaTiO3/SrTiO3 multilayers were grown by pulsed laser deposition (PLD) on (001)-oriented Nb-doped SrTiO3 (SrTiO3:Nb) substrates. Measurements of the dielectric properties were performed comparing BaTiO3 films and BaTiO3/SrTiO3 multilayers of different number of individual layers, but equal overall thickness. The dielectric loss saturates for a thickness above 300 nm, and linearly decreases with decreasing film thickness below a thickness of 75 nm, and it is independent on the number of multilayers, pointing to some interface effect. The thickness dependence of the dielectric constant of BaTiO3 films and BaTiO3/SrTiO3 multilayers; exhibits a change in the linear slope at a thickness of 75 nm. This behavior is explained by the change observed in the morphology at a thickness of 75 nm. In order to explain the thickness dependence of the dielectric constant, two approaches are considered in this paper, viz. a "series capacitor" model and a "dead layer" model.

High temperature thermal stability studies of ultrathin Al2O3 layers deposited on native oxide and sulphur passivated InGaAs surfaces

High resolution synchrotron radiation core level photoemission measurements have been used to undertake a comparative study of the high temperature stability of ultrathin Al2O3 layers deposited by atomic layer deposition (ALD) on both sulphur passivated and native oxide covered InGaAs. The residual interfacial oxides between sulphur passivated InGaAs and the ultrathin Al2O3 layer can be substantially removed at high temperature (up to 700 °C) without impacting on the InGaAs stoichiometry while significant loss of indium was recorded at this temperature on the native oxide InGaAs surface.

Nonreciprocal nonlinear scattering by stacked magnetoactive semiconductor layers

The combinatorial frequency generation by the periodic stacks of magnetically biased semiconductor layers has been modelled in the self-consistent problem formulation, taking into account the nonlinear dynamics of carriers. It has been shown that the nonlinear response of the magnetoactive semiconductor periodic structure is strongly enhanced by magnetic bias and combinations of the layer physical and geometrical parameters. The effects of the pump wave nonreciprocal reflectance and field displacement on the efficiency of three-wave mixing process is illustrated by the simulation results

Quasi-periodic stacks of semiconductor layers: Combinatorial frequency generation

The nonlinear scattering and combinatorial frequency generation by the quasi-periodic Fibonacci and Thue-Morse stacks of semiconductor layers have been investigated taking into account the nonlinear charge dynamics. It has been shown that the mixing processes in passive semiconductor structures are driven by the competitive effects of the collision of charges and resonance interactions of carriers with pump waves. The effects of the stack arrangements and constituent layer parameters on the efficiency of the combinatorial frequency generation are discussed. 

Magnetic Characteristics of a High-layer-number NiFe/FeMn Multilayer

We report the static & dynamic magnetic characteristics of a high-layer-number NiFe/FeMn multilayer test structure with potential applications in broadband absorber and filter devices. To allow fine control over the absorption linewidths and to understand the mechanisms governing the resonances in a tailored structure similar to that expected to be used in real world applications, the multilayer was intentionally designed to have layer thickness and interface roughness variations. Magnetometry measurements show the sample has complex hysteresis loops with features consistent with single ferromagnetic film reversals. Structural characterisation by transmission electron microscopy allows us to correlate the magnetic properties with structural features. Analysis of resonance frequencies from broadband ferromagnetic resonance measurements as a function of field magnitude and orientation provide values of the local exchange bias, rotatable anisotropy, and uniaxial anisotropy fields for specific layers in the stack and explain the observed mode softening. The linewidths of the multilayer are adjustable around the bias field, approaching twice that seen at larger fields, allowing control over the bandwidth of devices formed from the structure.

Explaining the Coexistence of Large-scale and Small-scale Magnetic Fields in Fully Convective Stars

Despite the lack of a shear-rich tachocline region, low-mass fully convective (FC) stars are capable of generating strong magnetic fields, indicating that a dynamo mechanism fundamentally different from the solar dynamo is at work in these objects. We present a self-consistent three-dimensional model of magnetic field generation in low-mass FC stars. The model utilizes the anelastic magnetohydrodynamic equations to simulate compressible convection in a rotating sphere. A distributed dynamo working in the model spontaneously produces a dipole-dominated surface magnetic field of the observed strength. The interaction of this field with the turbulent convection in outer layers shreds it, producing small-scale fields that carry most of the magnetic flux. The Zeeman–Doppler-Imaging technique applied to synthetic spectropolarimetric data based on our model recovers most of the large-scale field. Our model simultaneously reproduces the morphology and magnitude of the large-scale field as well as the magnitude of the small-scale field observed on low-mass FC stars.