Structural and electrical anisotropy of (001)-, (116)-, and (103)-oriented epitaxial SrBi2Ta2O9 thin films on SrTiO3 substrates grown by pulsed laser deposition

Epitaxial SrBi2Ta2O9 (SBT) thin films with well-defined (001), (116), and (103) orientations have been grown by pulsed laser deposition on (001)-, (011)-, and (111)-oriented Nb-doped SrTiO3 substrates. X-ray diffraction pole figure and phi -scan measurements revealed that the three-dimensional epitaxial orientation relation SBT(001)parallel to SrTiO3(001), and SBT[1(1) over bar 0]parallel to SrTiO3[100] is valid for all cases of SET thin films on SrTiO3 substrates, irrespective of their orientations. Atomic force microscopy images of the c-axis-oriented SET revealed polyhedron-shaped grains showing spiral growth around screw dislocations. The terrace steps of the c-axis-oriented SET films were integral multiples of a quarter of the lattice parameter c of SBT (similar to 0.6 nm). The grains of (103)-oriented SET films were arranged in a triple-domain configuration consistent with the symmetry of the SrTiO3(111) substrate. The measured remanent polarization (2P(r)) and coercive field (2E(c)) of (116)-oriented SBT films were 9.6 muC/cm(2) and 168 kV/cm, respectively, for a maximum applied electric field of 320 kV/cm. Higher remanent polarization (2P(r)=10.4 muC/cm(2)) and lower coercive field (2E(c)=104 kV/cm) than those of SBT(116) films were observed in (103)-oriented SET thin films, and (001)-oriented SET revealed no ferroelectricity along the [001] axis. The dielectric constants of (001)-, (116)-, and (103)-oriented SBT were 133, 155, and 189, respectively. (C) 2000 American Institute of Physics.

Formation of epitaxial BaTiO3/SrTiO3 multilayers grown on Nb-doped SrTiO3 (001) substrates

The formation of epitaxial BaTiO3/SrTiO3 multilayers; is studied in terms of the growth mechanism by investigating surface morphologies, crystalline orientations, microstructures, and structures of the interfaces, as well as by determining the dielectric properties. Under specific conditions, the epitaxial BaTiO3 films follow a layer-then-island (Stranski-Krastanov) mechanism on SrTiO3 (001)-oriented substrates. In view of actual efforts made to grow epitaxial superlattices involving very thin individual layers of BaTiO3 and/or SrTiO3, we have determined that the BaTiO3 films Of up to 6,nm thickness do not show any defects and have a sharp BaTiO3-on-SrTiO3 interface. On the contrary, SrTiO3-on-BaTiO3 interfaces within multilayers are rough, probably due to the different growth mechanisms of the two different materials, or due to a difference in the morphological stability of the growth surfaces caused by different surface energies of BaTiO3 and SrTiO3 and by different mobilities of the Ba and Sr atoms reaching the SrTi3 and BaTiO3 layers, respectively.

Solutions of fourth-order parabolic equation modeling thin film growth

In this paper we study the well-posedness for a fourth-order parabolic equation modeling epitaxial thin film growth. Using Kato's Method [1], [2] and [3] we establish existence, uniqueness and regularity of the solution to the model, in suitable spaces, namelyC⁰([0,T];L^p(Ω)) where  with 1<α<2, n∈N and n≥2. We also show the global existence solution to the nonlinear parabolic equations for small initial data. Our main tools are L_p–L_q-estimates, regularization property of the linear part of e^−tΔ2 and successive approximations. Furthermore, we illustrate the qualitative behavior of the approximate solution through some numerical simulations. The approximate solutions exhibit some favorable absorption properties of the model, which highlight the stabilizing effect of our specific formulation of the source term associated with the upward hopping of atoms. Consequently, the solutions describe well some experimentally observed phenomena, which characterize the growth of thin film such as grain coarsening, island formation and thickness growth.