Fabrication of Ti-Al coatings by mechanical alloying method

By means of the mechanical alloying (MA) method, Al and Ti + Al coatings were deposited on Ti alloy substrates. During the mechano-activation processing, the substrate surface was impacted by a large number of flying balls along with particles of powder. The repeated ball collisions with the substrate resulted in the deposition of powder on its surface. MA technique produced Ti + Al coating with a thickness of 200 µm and Al one with a thickness of 50 µm after 2 h milling at room temperature. The as-synthesized coatings showed structures with high apparent density and free of porosity. The surface morphology of the MA-coatings was very rough. Annealing treatment led to the leveling of this uneven morphology. Annealing at temperatures ranging between 600 °C and 1100 °C gave different aluminide phases on the samples. In the case of Al coating, Al3Ti and Ti3Al compound were observed upon heating up to 1100 °C. In the case of Ti + Al coating, Al3Ti, Al2Ti, TiAl and Ti3Al were formed on the surface.

Stabilization of Ti-molecular sieve catalysts used in selective sulfoxidation reactions by ionic liquids

Sulfoxidation reactions of 4,6-dimethyl-2-methylthiopyrimidine have been performed using titanosilicate catalysts in ionic liquids, dioxane and ethanol. The ionic liquid reactions showed superior reactivity compared with molecular solvents. Moreover, on examination of the recycling of the catalyst, a significant increase in the stability of catalyst was found both in terms of recycling activity and leaching of the titanium from the catalyst. The mechanism by which the ionic liquid reduces the solubilisation of the catalysts is explored.

Germanium on Sapphire By Wafer Bonding

This paper describes the creation of a germanium on sapphire platform, via wafer bonding technology, for system-on-a-chip applications. Similar thermal coefficients of expansion between germanium (5.8 x 10-6 K-1) and sapphire (5 x 10-6 K-1) make the bonding of germanium to sapphire a reality. Germanium directly bonded to sapphire results in microvoid generation during post bond annealing. Inclusion of an interface layer such as silicon dioxide layer by plasma enhanced chemical vapour deposition, prior to bonding, results in a microvoid free bond interface after annealing. Grinding and polishing of the subsequent germanium layer has been achieved leaving a thick germanium on sapphire (GeOS) substrate. Submicron GeOS layers have also been achieved with hydrogen/helium co-implantation and layer transfer. Circular geometry transistors exhibiting a field effect mobility of 890 cm2/V s have been fabricated onto the thick germanium on sapphire layer.

Germanium on sapphire

This paper explores the potential of germanium on sapphire (GeOS) wafers as a universal substrate for System on a Chip (SOC), mm wave integrated circuits (MMICs) and optical imagers. Ge has a lattice constant close to that of GaAs enabling epitaxial growth. Ge, GaAs and sapphire have relatively close temperature coefficients of expansion (TCE), enabling them to be combined without stress problems. Sapphire is transparent over the range 0.17 to 5.5 µm and has a very low loss tangent (a) for frequencies up to 72 GHz. Ge bonding to sapphire substrates has been investigated with regard to micro-voids and electrical quality of the Ge back interface. The advantages of a sapphire substrate for integrated inductors, coplanar waveguides and crosstalk suppression are also highlighted. MOS transistors have been fabricated on GeOS substrates, produced by the Smart-cut process, to illustrate the compatibility of the substrate with device processing. © 2008 World Scientific Publishing Company.