22 resultados para Semiconductor films


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The kinetics of liquid phase semiconductor photocatalytic and photoassisted reactions are an area of some debate, reignited recently by an article by Ollis(1) in which he proposed a simple pseudo- steady- state model to interpret the Langmuir- Hinshelwood type kinetics, commonly observed in such systems. In the current article, support for this model, over other models, is provided by a reinterpretation of the results of a study, reported initially in 1999,2 of the photoassisted mineralization of 4- chlorophenol, 4-CP, by titania films and dispersions as a function of incident light intensity, I. On the basis of this model, these results indicate that 4- CP is adsorbed more strongly on P25 TiO2 when it is in a dispersed, rather than a film form, due to a higher rate constant for adsorption, k(1). In addition, the kinetics of 4- CP removal appear to depend on I-beta where, beta = 1 or 0.6 for when the TiO2 is in a film or a dispersed form, respectively. These findings are discussed both in terms of the pseudo- steady- state model and other popular kinetic models.

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Freestanding films containing nanocrystalline TiO2 and a suitable electron donor embedded in a cellulose matrix deoxygenate a closed environment (see Figure) upon UV illumination as a result of the photocatalytic properties of TiO2. This opens up the potential use of semiconductor photocatalysis in active packaging to achieve light-driven deoxygenation of closed environments.

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Novel Ag on TiO2 films are generated by semiconductor photocatalysis and characterized by ultraviolet-visible (UV/Vis) spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM), as well as assessed for surface-enhanced Raman scattering (SERS) activity. The nature and thickness of the photodeposited Ag, and thus the degree of SERS activity, is controlled by the time of exposure of the TiO2 film to UV light. All such films exhibit the optical characteristics (λmax ≅ 390 nm) of small (<20 nm) Ag particles, although this feature becomes less prominent as the film becomes thicker. The films comprise quite large (>40 nm) Ag islands that grow and merge with increasing levels of Ag photodeposition. Tested with a benzotriazole dye probe, the films are SERS active, exhibiting activity similar to that of 6-nm-thick vapordeposited films. The Ag/TiO2 films exhibit a lower residual standard deviation (∼25%) compared with Ag vapor-deposited films (∼45%), which is, however, still unacceptable for quantitative work. The sample-to-sample variance could be reduced significantly (<7%) by spinning the film during the SERS measurement. The Ag/TiO2 films are mechanically robust and resistant to removal and damage by scratching, unlike the Ag vapor-deposited films. The Ag/TiO2 films also exhibit no obvious loss of SERS activity when stored in the dark under otherwise ambient conditions. The possible extension of this simple, effective method of producing Ag films for SERS, to metals other than Ag and to semiconductors other than TiO2, is briefly discussed. 

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The results of a study of the oxidative mineralisation of 4-CP by oxygen, sensitised by thin films of Degussa P25 TiO2, are reported. The films are used under conditions in which the kinetics of photomineralisation are independent of mass transfer effects and stable towards repeated irradiation. Using a TiO2 film, the process goes through the same mechanism as a TiO2 dispersion, generating the same intermediates, namely: 4-chlorocatechol and hydroquinone. The kinetics of photomineralisation show clear differences between a TiO2 film and a dispersion. With TiO2 films the initial rate of photomineralisation is strongly dependent upon photocatalyst loading, (units; g dm(-3)) reaching a distinct maximum, which appears to be associated with the formation of a monolayer of aggregated particles - the diameter of the aggregated particles is estimated as 0.44 mu m. A simple 2D model is presented to help illustrate the features of such a system. With TiO2 dispersions the rate usually reaches a plateau at ca. 0.5 g dm(-3) of TiO2. For TiO2 films the initial rate depends directly upon the incident light intensity, implying that the photocatalytically active particles are under low illumination conditions, partially shielded by the other particles making up each aggregated particle. In contrast, with TiO2 dispersions R-i depends upon I-0.64, implying that the different light intensities used spanned both the high (R(i)proportional to I-1/2) and low (R(i)proportional to I) intensity kinetic regions. The kinetics of photomineralisation of 4-CP, sensitised by TiO2 films obey the same Langmuir-Hinshelwood expressions as found in most semiconductor photocatalyst work conducted with TiO2 dispersions. However, in a study of the variation R-i as a function of [4-CP] and [O-2] the values for the maximum rates were larger, and those for the apparent Langmuir adsorption coefficients were smaller, than those found for TiO2 dispersions. (C) 1998 Elsevier Science S.A. All rights reserved.

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Undoped and cobalt-doped (1-4 wt.%) ZnO polycrystalline, thin films have been fabricated on quartz substrates using sequential spin-casting and annealing of simple salt solutions. X-ray diffraction (XRD) reveals a wurzite ZnO crystalline structure with high-resolution transmission electron microscopy showing lattice planes of separation 0.26 nm, characteristic of (002) planes. The Co appears to be tetrahedrally co-ordinated in the lattice on the Zn sites (XRD) and has a charge of + 2 in a high-spin electronic state (X-ray photoelectron spectroscopy). Co-doping does not alter the wurzite structure and there is no evidence of the precipitation of cobalt oxide phases within the limits of detection of Raman and XRD analysis. Lattice defects and chemisorbed oxygen are probed using photoluminescence and Raman spectroscopy - crucially, however, this transparent semiconductor material retains a bandgap in the ultraviolet (3.30-3.48 eV) and high transparency (throughout the visible spectral regime) across the doping range. © 2012 Elsevier B.V.

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The metallo-phthalocyanines (MPcs) are an interesting group of organic semiconductor materials for applications such as large area solar cells due to their optoelectronic properties coupled with the possibility of easily and cheaply fabricating thin films of MPcs [1, 2]. As for organic semiconductors in general, many of the interesting properties of the MPcs such as magnetism, light absorption and charge transport, are highly anisotropic [2, 3]. To maximise the efficiency of a device based on these materials it is therefore important to study their molecular orientation in films and to assess the influence of different growth conditions and substrate treatments.
X-ray diffraction is a well established and powerful technique for studying texture (and hence molecular orientation) in crystalline materials, but it cannot provide any information about amorphous or nanocrystalline films. In electron paramagnetic resonance (EPR) spectroscopy the signal comes from the spin of unpaired electrons in the material. This technique therefore does not require the sample to be crystalline. It works for any sample with paramagnetic centres such as the MPcs where the unpaired electrons are contributed by the metal. In this paper we present a continuous-wave X-band EPR study using the anisotropy of the EPR spectrum of CuPc [4] to determine the orientation effects in different types of CuPc films. From these measurements we gain insight into the molecular arrangement of films with different spin concentrations, and apply our technique to the study of molecular orientation in photovoltaic cells.