Optimisation of source/drain extension region profile for suppression of short channel effects in sub-50 nm DG SOI MOSFETs with high- k gate dielectrics

Novel technology dependent scaling parameters i.e. spacer to gradient ratio and effective channel length (Leff) are proposed for source/drain engineered DG MOSFET, and their significance in minimizing short channel effects (SCES) in high-k gate dielectrics is discussed in detail. Results show that a high-k dielectric should be associated with a higher spacer to gradient ratio to minimise SCEs The analytical model agrees with simulated data over the entire range of spacer widths, doping gradients, high-k gate dielectrics and effective channel lengths.

Effects of plastic coating on K-alpha yield from ultra-short pulse

A study of the K-alpha radiation emitted from Ti foils irradiated with intense, similar to0.2 J, 67 fs, 800 nm laser pulses, scanning a range of intensities (similar to10(15)-10(18) W cm(-2)), is reported. The brightness of single-shot K-alpha line emission from the front of the targets is recorded. The yield from bare titanium (Ti) is compared to that from plastic (parylene-E) coated Ti. It is demonstrated that, for a defocused beam, a thin layer of plastic increases the yield.

The effects of short and long incubations on DNA fragmentation of testicular

DNA fragmentation in testicular sperm from men with obstructive azoospermia is increased by 4 hr and 24 hr incubations, and after cryopreservation. The effect is intensified by post-thaw incubations. Testicular sperm to be used clinically in ICSI should be injected without delay.