Physical modelling of millimetre wave signal reflection from forward biased PIN diodes

This paper examines the DC power requirements of PIN diodes which, with suitable applied DC bias, have the potential to reflect or to permit transmission of millimetre wave energy through them by the process of inducing a semiconductor plasma layer in the i-region. The study is conducted using device level simulation of SOI and bulk PIN diodes and reflection modelling based on the Drude conduction model. We examined five diode lengths (60–140 µm) and seven diode thicknesses (4–100 µm). Simulation output for the diodes of varying thicknesses was subsequently used in reflection modelling to assess their performance for 100 GHz operation. It is shown that substantially high DC input power is required in order to induce near total reflection in SOI PIN diodes at 100 GHz. Thinner devices consume less DC power, but reflect less incident radiation for given input power. SOI diodes are shown to have improved carrier confinement compared with bulk diodes.

Visualization of water vapour flow in a packed bed adsorber by near-infrared diffused transmittance tomography

This work presents a procedure based on spatially-resolved near-infrared imaging, in order to observe temperature and composition maps in gas-solid packed beds subjected to effects of aspect ratio and non-isothermal conditions. The technique was applied to the water vapour flow in a packed bed adsorber of low aspect ratio, filled with silica gel, using a tuneable diode laser, focal planar array detector and tomographic reconstruction. The 2D projected images from parallel scanning permitted data to be retrieved from the packing and above the packing sections of 12.0×12.0×18.2mm at a volume-resolution of 0.15×0.15×0.026mm and a time-resolution of less than 3min. The technique revealed uneven temperature and composition maps in the core packed bed and in the vicinity of the wall due to flow maldistribution. In addition, the heat uptake from the packed bed and local cross-mixing were experimentally ascertained by local profiles of the water vapour composition and temperature under various aspect ratios and feed flow rates. The relative deviations in temperature and compositions were 11.1% and 9.3%, respectively. The deviation in composition, which covers the packing and above the packing sections, was slightly higher than the deviation of 8% obtained up-to-date but was limited to the exit of a packed bed adsorber. © 2011.

Variable temperature, variable-gap Otto prism coupler for use in a vacuum environment

The field of surface polariton physics really took off with the prism coupling techniques developed by Kretschmann and Raether, and by Otto. This article reports on the construction and operation of a rotatable, in vacuo, variable temperature, Otto coupler with a coupling gap that can be varied by remote control. The specific design attributes of the system offer additional advantages to those of standard Otto systems of (i) temperature variation (ambient to 85 K), and (ii) the use of a valuable, additional reference point, namely the gap-independent reflectance at the Brewster angle at any given, fixed temperature. The instrument is placed firmly in a historical context of developments in the field. The efficacy of the coupler is demonstrated by sample attenuated total reflectance results on films of platinum, niobium, and yttrium barium copper oxide and on aluminum/gallium arsenide (Al/GaAs) Schottky diode structures. (C) 2000 American Institute of Physics. [S0034-6748(00)02411-4].

Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors

Silicon on Insulator (SOI) substrates offer a promising platform for monolithic high energy physics detectors with integrated read-out electronics and pixel diodes. This paper describes the fabrication and characterisation of specially-configured SOI substrates using improved bonded wafer ion split and grind/polish technologies. The crucial interface between the high resistivity handle silicon and the SOI buried oxide has been characterised using both pixel diodes and circular geometry MOS transistors. Pixel diode breakdown voltages were typically greater than 100V and average leakage current densities at 70 V were only 55 nA/ sq cm. MOS transistors subjected to 24 GeV proton irradiation showed an increased SOI buried oxide trapped charge of only 3.45x1011cn-2 for a dose of 2.7Mrad