153 resultados para oxygen derivative


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By using a fast reaction technique which employs H2S gas as a fast-reacting chemical repair agent, it is possible to measure the competition kinetics between chemical repair reactions and oxygen fixation reactions in model DNA and cellular systems. In plasmid pBR322 DNA irradiated with electrons, we have compared the oxygen fixation reactions of the free radical precursors that lead to the production of single-strand (SSBs) and double-strand breaks (DSBs). For the oxygen-dependent fixation of radical damage leading to SSBs, a second-order rate constant of 2.3 x 10(8) dm(3) mol(-1) s(-1) was obtained compared to 8.9 x 10(7) dm(3) mol(-1) s(-1) for DSBs. The difference is in general agreement with predictions from a multiple-radical model where the precursor of a DSB originates from two radicals. The fixation of this precursor by oxygen will require both radicals to be fixed for the DSB to be formed, which will have slower kinetics than that of single free-radical precursors of SSBs. (C) 1999 by Radiation Research Society.

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A reflex discharge plasma, obtained as a hybrid between a Penning discharge plasma (PDP) and a hollow-cathode discharge (HCD) plasma, is analysed as a possible direction-current, high-density plasma source. The experiment is run in oxygen at pressures of 10 mTorr and 1 mTorr, and for discharge currents of 100 to 200 mA. Although the gas pressure is considerably lower than those used in HCDs, the hollow-cathode effect (HCE) occurs for current levels higher than 100 mA and leads to plasma densities comparable with those obtained using inductive plasma sources. The presence of a constant magnetic field leads to the enhancement of electron emission from cathodes under ion bombardment, and to the decreasing of the ion loss by diffusion to the wall.

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Spectroscopic absorption and emission measurements have been used to study laser deposition of YBCO films. They show that >95% of the monatomic Y and Ba initially ablated from the target undergo gas-phase chemical combination before film deposition. In contrast, considerable monatomic Cu persists into the deposition region. in this region, equilibrated gas temperatures are of the order of 2700 K. It is suggested that this high temperature facilitates film crystallization and epitaxial growth. The survival of monatomic Cu in the plume to the site of deposition is a manifestation of its endothermic reaction with O-2.