Material effects on stress-induced defect generation in trenched silicon-on-insulator structures

We have investigated the influence of the material properties of the silicon device layer on the generation of defects, and in particular slip dislocations, in trenched and refilled fusion-bonded silicon-on-insulator structures. A strong dependence of the ease of slip generation on the type of dopant species was observed, with the samples falling into three basic categories; heavily boron-doped silicon showed ready slip generation, arsenic and antimony-doped material was fairly resistant to slip, while silicon moderately or lightly doped with phosphorous or boron gave intermediate behavior. The observed behavior appears to be controlled by differences in the dislocation generation mechanism rather than by dislocation mobility. The introduction of an implanted buried layer at the bonding interface was found to result in an increase in slip generation in the silicon, again with a variation according to the dopant species. Here, the greatest slip occurred for both boron and antimony-implanted samples. The weakening of the implanted material may be related to the presence of a band of precipitates observed in the silicon near the bonding interface. (C) 2001 The Electrochemical Society.

A search for circumstellar material around B-type stars in the Galactic halo

19 B-type stars, selected from the Palomar-Green Survey, have been observed at infrared wavelengths to search for possible infrared excesses, as part of an ongoing programme to investigate the nature of early-type stars at high Galactic latitudes. The resulting infrared fluxes, along with Stromgren photometry, are compared with theoretical flux profiles to determine whether any of the targets show evidence of circumstellar material, which may be indicative of post-main- sequence evolution. Eighteen of the targets have flux distributions in good agreement with theoretical predictions. However, one star, PG 2120 + 062, shows a small near-infrared excess, which may be due either to a cool companion of spectral type F5-F7, or to circumstellar material, indicating that it may be an evolved object such as a post-asymptotic giant branch star, in the transition region between the asymptotic giant branch and planetary nebula phase, with the infrared excess due to recent mass loss during giant branch evolution.

Entanglement between two superconducting qubits via interaction with nonclassical radiation

We propose a scheme to physically interface superconducting nanocircuits and quantum optics. We address the transfer of quantum information between systems having different physical natures and defined in Hilbert spaces of different dimensions. In particular, we investigate the transfer of the entanglement initially in a nonclassical state of an infinite dimensional system to a pair of superconducting charge qubits. This setup is able to drive an initially separable state of the qubits into an almost pure, highly entangled state suitable for quantum information processing.