Comparison of finite element and finite volume methods application in geometrically nonlinear stress analysis

A novel three-dimensional finite volume (FV) procedure is described in detail for the analysis of geometrically nonlinear problems. The FV procedure is compared with the conventional finite element (FE) Galerkin approach. FV can be considered to be a particular case of the weighted residual method with a unit weighting function, where in the FE Galerkin method we use the shape function as weighting function. A Fortran code has been developed based on the finite volume cell vertex formulation. The formulation is tested on a number of geometrically nonlinear problems. In comparison with FE, the results reveal that FV can reach the FE results in a higher mesh density.

Numerical analysis of thermal stresses induced during VFM encapsulant curing

Encapsulant curing using a Variable Frequency Microwave (VFM) system is analysed numerically. Thermosetting polymer encapsulant materials require an input of heat energy to initiate the cure process. In this article, the heating is considered to be performed by a novel microwave system, able to perform the curing process more rapidly than conventional techniques. Thermal stresses are induced when packages containing materials with differing coefficients of thermal expansion are heated, and cure stresses are induced as thermosetting polymer materials shrink during the cure process. These stresses are developed during processing and remain as residual stresses within the component after the manufacturing process is complete. As residual stresses will directly affect the reliability of the device, it is necessary to assess their magnitude and the effect on package reliability. A coupled multiphysics model has been developed to numercially analyse the microwave curing process. In order to obtain a usefully accurate model of this process, a holistic approach has been taken, in which the process is not considered to be a sequence of discrete steps, but as a complex coupled system. An overview of the implemented numerical model is presented, with particular focus paid to analysis of induced thermal stresses. Results showing distribution of stresses within an idealised microelectronics package are presented and discussed.