Investigation of wall-slip effect on lead-free solder paste and isotropic conductive adhesives

Wall-slip plays an important role in characterising the flow behaviour of solder paste materials. The wall slip arises due to the various attractive and repulsive forces acting between the solder particles and the walls of the measuring geometry.These interactions could lead to the presence of a thin solvent layer adjacent to the wall, which gives rise to slippage. The wall slip effect can play an important role in ensure successfulpaste release after the printing process. Wall-slip plays animportant role in characterising the flow behaviour of solderpastes and isotropic conductive adhesives. The study investigates the wall-slip formation in solder paste andisotropic conductive adhesives using flow visualisation technique. The slip distance was measured for parallel plate with different surface roughness in order to quantify the wallslip formations in these paste materials. An ink marker line was drawn between the parallel plate and the free surface of the sample. The parallel was rotated slowly at a constant shear rate of 0.05 sec-1 and the displacement of the ink marker was observed using a video microscope and image capturing software was utilised to capture the displacement of ink marker. From this study, it was found that the wall-slip effect was evident in all the paste materials. In addition, the different surface roughness of the parallel plates did not prevent the formation of wall-slip. This study has revealed that the wallslip effect could used to understand the flow behaviour of the paste in the stencil printing process.

Surface physics at the nano-scale via scanning probe microscopy and molecular dynamics simulations

Probe-based scanning microscopes, such as the STM and the AFM, are used to obtain the topographical and electronic structure maps of material surfaces, and to modify their morphologies on nanoscopic scales. They have generated new areas of research in condensed matter physics and materials science. We will review some examples from the fields of experimental nano-mechanics, nano-electronics and nano-magnetism. These now form the basis of the emerging field of Nano-technology. A parallel development has been brought about in the field of Computational Nano-science, using quantum-mechanical techniques and computer-based numerical modelling, such as the Molecular Dynamics (MD) simulation method. We will report on the simulation of nucleation and growth of nano-phase films on supporting substrates. Furthermore, a theoretical modelling of the formation of STM images of metallic clusters on metallic substrates will also be discussed within the non-equilibrium Keldysh Green function method to study the effects of coherent tunnelling through different atomic orbitals in a tip-sample geometry.