High current density induced damage mechanisms in electronic solder joints: a state-of-the-art review

High current density induced damages such as electromigration in the on-chip interconnection /metallization of Al or Cu has been the subject of intense study over the last 40 years. Recently, because of the increasing trend of miniaturization of the electronic packaging that encloses the chip, electromigration as well as other high current density induced damages are becoming a growing concern for off-chip interconnection where low melting point solder joints are commonly used. Before long, a huge number of publications have been explored on the electromigration issue of solder joints. However, a wide spectrum of findings might confuse electronic companies/designers. Thus, a review of the high current induced damages in solder joints is timely right this moment. We have selected 6 major phenomena to review in this paper. They are (i) electromigration (mass transfer due electron bombardment), (ii) thermomigration (mass transfer due to thermal gradient), (iii) enhanced intermetallic compound growth, (iv) enhanced current crowding, (v) enhanced under bump metallisation dissolution and (vi) high Joule heating and (vii) solder melting. the damage mechanisms under high current stressing in the tiny solder joint, mentioned in the review article, are significant roadblocks to further miniaturization of electronics. Without through understanding of these failure mechanisms by experiments coupled with mathematical modeling work, further miniaturization in electronics will be jeopardized

Simulation of transverse and longitudinal magnetic ripple structures induced by surface anisotropy

Micromagnetic ripple structures on the surfaces of thick specimens of ultra-soft magnetic material having strong surface anisotropy Ks favouring out-of-surface magnetization have been calculated. These ripples have wavelengths of the order of 0.1 μm and extend to a depth ∼ √A/Ms, where A is the exchange constant and Ms is the saturation magnetization. The wave-vectors of the ripple structures are either transverse or parallel to the bulk magnetization. Both structures have lower energy than the one-dimensional structure discussed by O'Handley and Woods, and they exhibit stronger normal magnetization. The transverse structure requires a surface anisotropy Ks ≥ 0.80K0, where is that required for the one-dimensional structure. The threshold for longitudinal ripples is 0.84K0. It is suggested that the transverse structure probably constitutes the ground state. The magnitudes of Ks and A should be obtainable from measurements of the ripple wavelength and amplitude, and Ms.

Prooxidant action of knipholone anthrone: Copper dependent reactive oxygen species generation and DNA damage

Knipholone (KP) and knipholone anthrone (KA) are natural 4-phenylanthraquinone structural analogues with established differential biological activities including in vitro antioxidant and cytotoxic properties. By using DNA damage as an experimental model, the comparative Cu(II)-dependent prooxidant action of these two compounds were studied. In the presence of Cu(II) ions, the antioxidant KA (3.1-200 [mu]M) but not KP (6-384 [mu]M) caused a concentration-dependent pBR322 plasmid DNA strand scission. The DNA damage induced by KA could be abolished by reactive oxygen species scavengers, glutathione and catalase as well as EDTA and a specific Cu(I) chelator bathocuproine disulfonic acid. In addition to Cu(II) chelating activity, KA readily reduces Cu(II) to Cu(I). Copper-dependent generation of reactive oxygen species and the subsequent macromolecular damage may be involved in the antimicrobial and cytotoxic activity of KA.