Computer modelling analysis of the globtop's effects on aluminium wirebond reliability

In power electronics modules, heavy aluminium wires, i.e. wire diameters greater than 100 microns, are bonded to the active semiconductor devices and conductor metallization to form electric circuits of the power electronic module. Due to the high currents that may flow through these wires, a single connection usually contains several wires and thus, a large number of wires are used in a power electronics module. Under normal operation or test condition, a significant amount of stresses and strains induced in the wire and bonding interfaces, resulting in failure over time. In this paper, computer modelling techniques are used to analyse the effect of globtop design on the reliability of aluminium wirebonds under cyclic thermal-mechanical loading conditions. The results will show the sensitivity of the reliability of the wirebonds to the changes in the geometry and the material properties of the wirebond globtop.

Demonstration thermo-electric and MHD mathematical models of a 500 kA A1 electrolysis cell

In the present study, a 3D full cell quarter thermo-electric model of a 500kA demonstration cell has been developed and solved. In parallel, a non-linear wave MHD model of the same 500 kA demonstration cell has been developed and solved. A preliminary study of the impact of the interactions between the cell thermo-electric and MHD models will be presented.

Time dependent electric, magnetic and hydrodynamic interaction in aluminium electrolysis cells

The waves in commercial cells for electrolytic aluminium production originate at the interface between the liquid aluminium and electrolyte, but their effect can spread into the surrounding busbar network as electric current perturbation, and the total magnetic field acquires a time dependent component. The presented model for the wave development accounts for the nonuniform electric current distribution at the cathode and the whole network of the surrounding busbars. The magnetic field is computed for the continuous current in the fluid zones, all busbars and the ferromagnetic construction elements. When the electric current and the associated magnetic field are computed according to the actual electrical circuit and updated for all times, the instability growth rate is significantly affected. The presented numerical model for the wave and electromagnetic interaction demonstrates how different physical coupling factors are affecting the wave development in the electrolysis cells. These small amplitude self-sustained interface oscillations are damped in the presence of intense turbulent viscosity created by the horizontal circulation velocity field. Additionally, the horizontal circulation vortices create a pressure gradient contributing to the deformation of the interface. Instructive examples for the 500 kA demonstration cell are presented.

High electric current density-induced interfacial reactions in micro ball grid array (μBGA) solder joints

The effect of a high electric current density on the interfacial reactions of micro ball grid array solder joints was studied at room temperature and at 150 °C. Four types of phenomena were reported. Along with electromigration-induced interfacial intermetallic compound (IMC) formation, dissolution at the Cu under bump metallization (UBM)/bond pad was also noticed. With a detailed investigation, it was found that the narrow and thin metallization at the component side produced “Joule heating” due to its higher resistance, which in turn was responsible for the rapid dissolution of the Cu UBM/bond pad near to the Cu trace. During an “electromigration test” of a solder joint, the heat generation due to Joule heating and the heat dissipation from the package should be considered carefully. When the heat dissipation fails to compete with the Joule heating, the solder joint melts and molten solder accelerates the interfacial reactions in the solder joint. The presence of a liquid phase was demonstrated from microstructural evidence of solder joints after different current stressing (ranging from 0.3 to 2 A) as well as an in situ observation. Electromigration-induced liquid state diffusion of Cu was found to be responsible for the higher growth rate of the IMC on the anode side.