Busbar sizing modeling tools: comparing an ANSYS® based 3D model with the versatile 1D model part of MHD-Valdis

The main goal of a cell stability MHD model like MHD-Valdis is to help locate the busbars around the cell in a way which leads to the generation of a magnetic field inside the cell that itself leads to a stable cell operation. Yet as far as the cell stability is concerned, the uniformity of the current density in the metal pad is also extremely important and can only be achieved with a correct busbar network sizing. This work compares the usage of a detailed ANSYS based 3D thermo-electric model with the one of the versatile 1D part of MHD-Valdis to help design a well balanced busbar network.

Computer modeling of a micro-manufactured one-turn inductor

The results of a finite element computer modelling analysis of a micro-manufactured one-turn magnetic inductor using the software package ANSYS 10.0 are presented. The inductor is designed for a DC-DC converter used in microelectronic devices. It consists of a copper conductor with a rectangular cross-section plated with an insulation layer and a layer of magnetic core. The analysis has focused on the effects of the frequency and the air gaps on the on the inductance values and the Joule losses in the core and conductor. It has been found that an inductor with small multiple air gaps has lower losses than an inductor with a single larger gap

Wire bond reliability for power electronic modules - effect of bonding temperature

In this paper, thermal cycling reliability along with ANSYS analysis of the residual stress generated in heavy-gauge Al bond wires at different bonding temperatures is reported. 99.999% pure Al wires of 375 mum in diameter, were ultrasonically bonded to silicon dies coated with a 5mum thick Al metallisation at 25degC (room temperature), 100degC and 200degC, respectively (with the same bonding parameters). The wire bonded samples were then subjected to thermal cycling in air from -60degC to +150degC. The degradation rate of the wire bonds was assessed by means of bond shear test and via microstructural characterisation. Prior to thermal cycling, the shear strength of all of the wire bonds was approximately equal to the shear strength of pure aluminum and independent of bonding temperature. During thermal cycling, however, the shear strength of room temperature bonded samples was observed to decrease more rapidly (as compared to bonds formed at 100degC and 200degC) as a result of a high crack propagation rate across the bonding area. In addition, modification of the grain structure at the bonding interface was also observed with bonding temperature, leading to changes in the mechanical properties of the wire. The heat and pressure induced by the high temperature bonding is believed to promote grain recovery and recrystallisation, softening the wires through removal of the dislocations and plastic strain energy. Coarse grains formed at the bonding interface after bonding at elevated temperatures may also contribute to greater resistance for crack propagation, thus lowering the wire bond degradation rate