A Markov modulated Poisson process model for rainfall increments

The problems encountered when using traditional rectangular pulse hierarchical point processmodels for fine temporal resolution and the growing number of available tip-time records suggest that rainfall increments from tipping-bucket gauges be modelled directly. Poisson processes are used with an arrival rate modulated by a Markov chain in Continuous time. The paper shows how, by using two or three states for this chain, much of the structure of the rainfall intensity distribution and the wet/dry sequences can be represented for time-scales as small as 5 minutes.

Numerical analysis of thermal stresses induced during VFM encapsulant curing

Encapsulant curing using a Variable Frequency Microwave (VFM) system is analysed numerically. Thermosetting polymer encapsulant materials require an input of heat energy to initiate the cure process. In this article, the heating is considered to be performed by a novel microwave system, able to perform the curing process more rapidly than conventional techniques. Thermal stresses are induced when packages containing materials with differing coefficients of thermal expansion are heated, and cure stresses are induced as thermosetting polymer materials shrink during the cure process. These stresses are developed during processing and remain as residual stresses within the component after the manufacturing process is complete. As residual stresses will directly affect the reliability of the device, it is necessary to assess their magnitude and the effect on package reliability. A coupled multiphysics model has been developed to numercially analyse the microwave curing process. In order to obtain a usefully accurate model of this process, a holistic approach has been taken, in which the process is not considered to be a sequence of discrete steps, but as a complex coupled system. An overview of the implemented numerical model is presented, with particular focus paid to analysis of induced thermal stresses. Results showing distribution of stresses within an idealised microelectronics package are presented and discussed.